2SC4942 [KEXIN]
NPN Silicon Transistors; NPN硅晶体管
| 型号： | 2SC4942 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Silicon Transistors |
| 文件： | 总1页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Silicon Transistors
2SC4942
Features
New package with dimensions in between those of small
signal and power signal package
High voltage
Fast switching speed
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Symbol
VCBO
VCEO
VEBO
ID(DC)
ID(pulse) *1
PT *2
Tj
Rating
Unit
V
600
600
V
7
V
1
A
Collector current (pulse)
Total power dissipation
Junction temperature
2
2
A
W
150
Storage temperature
Tstg
-55 to 150
*1 PW
10 ms, duty cycle
50 %
*2 7.5 cm2 X 0.7 mm ceramic board mounted
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
Symbol
ICBO
Testconditons
Min
Typ
Max
10
Unit
ìA
VCB = 600 V, IE = 0
IEBO
VEB = 7.0 V, IC = 0
10
ìA
VCE = 5.0 V, IC = 0.1 A
VCE = 5.0 V, IC = 0.5 A
IC = 400 mV, IB = 80 mA
IC = 400 mV, IB = 80 mA
VCE = 5.0 V, IE = ?50 mA
VCB = 10 V, IE = 0, f = 1.0 MHz
IC = 0.5 A, VCC= 250 V
IB1 = ?IB2 = 0.1 A
30
5
55
10
120
DC current gain
hFE
Collector saturation voltage
Base saturation voltage
Gain bandwidth product
Output capacitance
Turn-on time
VCE(sat)
VBE(sat)
fT
0.35
0.9
30
1.0
1.2
V
V
MHz
pF
ìs
Cob
tON
15
0.1
4.0
0.2
0.5
5.0
0.5
Storage time
tstg
ìs
Fall time
tf
RL = 500Ù
ìs
hFE Classification
Marking
hFE
AA1
AA2
AA3
60 to120
30 to 60
40 to 80
1
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相关型号：
2SC4942-AZ
Power Bipolar Transistor, 1A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
NEC
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