2SC4941_15 [JMNIC]
Silicon Power Transistors;
| 型号： | 2SC4941_15 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon Power Transistors |
| 文件： | 总3页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product Specification
www.jmnic.com
Silicon Power Transistors
2SC4941
DESCRIPTION
·With TO-3PML package
·Switching power transistor
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
3
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
Open emitter
VALUE
UNIT
VCBO
Collector-base voltage
1500
V
VCEO
VEBO
IC
Collector-emitter voltage
Emitter-base voltage
Collector current
Open base
800
V
V
Open collector
7
6
A
ICM
IB
Collector current-Peak
Base current
12
A
3
6
A
IB
Base current-Peak
Total power dissipation
Junction temperature
Storage temperature
A
PT
TC=25℃
65
W
℃
℃
Tj
150
-55~150
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-C
Thermal resistance from junction to case
1.92
℃/W
JMnic
Product Specification
www.jmnic.com
Silicon ower Transistors
2SC4941
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
IC=0.2A ;IB=0
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
800
V
VCBO
VCEsat
VBEsat
ICBO
ICEO
IEBO
Collector-base voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
IC=1mA ;IE=0
1500
V
V
IC=3A IB=0.6A
0.5
1.5
IC=3A IB=0.6A
V
VCB=1200V IE=0
VCE=RatedVCEO; IB=0
VEB=RatedVEBO; IC=0
IC=1A ; VCE=5V
IC=1mA ; VCE=5V
IC=0.6A ; VCE=10V
100
100
100
μA
μA
μA
hFE-1
hFE-2
fT
15
7
DC current gain
Transition frequency
8
MHz
Switching times
ton Turn-on time
ts
0.5
3.5
0.3
μs
μs
μs
IC=3A
IB1=0.6A; IB2=-1.2A
Storage time
Fall time
VBB2=4V
RL=85Ω
tf
JMnic
Product Specification
www.jmnic.com
Silicon Power Transistors
2SC4941
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
JMnic
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2SC4942
New package with dimensions in between those of small signal and power signal package
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