2SC4369 [JMNIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC4369 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4369
DESCRIPTION
·With TO-220F package
·Complement to type 2SA1658
·Good linearity of hFE
APPLICATIONS
·For general purpose applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
3
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
UNIT
V
Open emitter
Open base
30
30
V
Open collector
5
V
3
A
IB
Base current
0.3
A
PC
Collector dissipation
Junction temperature
Storage temperature
TC=25℃
15
W
℃
℃
Tj
150
-55~150
Tstg
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4369
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBE
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=10mA ; IB=0
30
IC=2A ;IB=0.2A
IC=0.5A ; VCE=2V
VCB=20V; IE=0
0.8
1.0
1.0
1.0
240
V
V
ICBO
μA
μA
IEBO
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.5A ; VCE=2V
IC=2.5A ; VCE=2V
IC=0.5A ; VCE=2V
70
25
hFE-2
DC current gain
fT
Transition frequency
100
MHz
hFE-1 Classifications
O
Y
70-140
120-240
2
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4369
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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