2SC4373 [SECOS]

NPN Plastic-Encapsulate Transistor; NPN塑封装晶体管
2SC4373
型号: 2SC4373
厂家: SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述:

NPN Plastic-Encapsulate Transistor
NPN塑封装晶体管

晶体 晶体管
文件: 总1页 (文件大小:75K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2SC4373  
0.8 A , 120 V  
NPN Plastic-Encapsulate Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
SOT-89  
FEATURES  
Small Flat Package.  
Large Current Capacity.  
4
1
2
3
A
E
CLASSIFICATION OF hFE  
C
Product-Rank  
2SC4373-O  
2SC4373-Y  
120~240  
CY  
B
D
Range  
80~160  
CO  
F
G
H
Marking  
K
J
L
PACKAGE INFORMATION  
Millimeter  
Min. Max.  
Millimeter  
REF.  
REF.  
Min.  
Max.  
Package  
MPQ  
Leader Size  
A
B
C
D
4.40  
3.94  
1.40  
2.30  
4.60  
4.25  
1.60  
2.60  
G
H
J
0.40  
0.58  
1.50 TYP  
3.00 TYP  
SOT-89  
1K  
7 inch  
K
0.32  
0.35  
0.52  
0.44  
E
F
1.50  
0.89  
1.70  
1.20  
L
Collector  
2
1
Base  
3
Emitter  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol  
Rating  
Unit  
Collector to Base Voltage  
VCBO  
VCEO  
VEBO  
IC  
120  
V
V
Collector to Emitter Voltage  
Emitter to Base Voltage  
120  
5
800  
V
Continuous Collector Current  
Collector Power Dissipation  
Thermal Resistance Junction to Ambient  
Junction, Storage Temperature  
mA  
mW  
°C / W  
°C  
PC  
500  
RθJA  
TJ, TSTG  
250  
150, -55~150  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol  
Min  
Typ  
Max  
Unit  
Test condition  
Collector to Base Breakdown Voltage  
Collector to Emitter Breakdown Voltage  
Emitter to Base Breakdown Voltage  
Collector Cut-Off Current  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
120  
-
-
-
V
V
IC=1mA, IE=0  
120  
-
IC=10mA, IB=0  
5
-
-
-
V
IE=1mA, IC=0  
-
0.1  
0.1  
240  
1
µA  
µA  
VCB=120 V, IE=0  
VEB=5V, IC=0  
Emitter Cut-Off Current  
IEBO  
-
-
DC Current Gain  
hFE  
80  
-
-
VCE=5V, IC=100mA  
IC=500mA, IB=50mA  
VCE=5V, IC=500mA  
Collector to Emitter Saturation Voltage  
Base to emitter Voltage  
VCE(sat)  
VBE  
-
V
V
-
-
120  
-
1
Transition Frequency  
http://wwCw.SoellCeocStGomrbOH.cuotmp/ut Capacitance  
fT  
-
-
MHz VCE=5V, IC=500mA  
Any changes of specification will not be informed individually.  
Cob  
-
30  
pF  
V =10V, IE=0 , f=1MHz  
CB  
09-Jun-2011 Rev. A  
Page 1 of 1  

相关型号:

2SC4373-HF_15

NPN Transistors
KEXIN

2SC4373-O

NPN Transistors
KEXIN

2SC4373-O-HF

NPN Transistors
KEXIN

2SC4373-Y

NPN Transistors
KEXIN

2SC4373-Y-HF

NPN Transistors
KEXIN

2SC4373_15

NPN Transistors
KEXIN

2SC4374

TRANSISTOR (NPN)
HTSEMI

2SC4375

TRANSISTOR (NPN)
HTSEMI

2SC4375

NPN Plastic-Encapsulate Transistor
SECOS

2SC4375-HF_15

NPN Transistors
KEXIN

2SC4375-O

NPN Transistors
KEXIN

2SC4375-O-HF

NPN Transistors
KEXIN