2SC4374 [HTSEMI]
TRANSISTOR (NPN); 晶体管（ NPN ）
| 型号： | 2SC4374 |
| 厂家： | 
SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
| 描述： | TRANSISTOR (NPN) |
| 文件： | 总1页 (文件大小：333K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC4374
SOT-89-3L
TRANSISTOR (NPN)
1. BASE
FEATURES
2. COLLECTOR
3. EMITTER
z
z
Small Flat Package
Low Collector- Emitter Saturation Voltage
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
80
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
80
V
5
V
Collector Current
400
mA
mW
℃/W
℃
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
500
RθJA
Tj
250
150
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
80
80
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC=1mA,IE=0
IC=10mA,IB=0
V
IE=1mA,IC=0
V
VCB=80V,IE=0
0.1
0.1
240
µA
µA
Emitter cut-off current
IEBO
VEB=5V,IC=0
hFE(1)
hFE(2)
VCE(sat)
VBE
VCE=2V, IC=50mA
VCE=2V, IC=200mA
IC=200mA,IB=20mA
VCE=2V, IC=5mA
VCE=10V,IC=10mA
VCB=10V, IE=0, f=1MHz
70
50
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
0.4
0.8
V
V
0.55
fT
100
10
MHz
pF
Transition frequency
Collector output capacitance
Cob
CLASSIFICATION OF hFE
（
1
）
RANK
RANGE
O
Y
70–140
EO
120–240
MARKING
EY
1
JinYu
semiconductor
www.htsemi.com
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