2SC4370Y [ISC]
Transistor;
| 型号： | 2SC4370Y |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Transistor 局域网 晶体管 |
| 文件： | 总2页 (文件大小：226K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4370
DESCRIPTION
·High Collector-Emitter Breakdown Voltage
VCEO= 160V(Min)
·Complement to Type 2SA1659
·Full-mold package that does not require an insulating
board or bushing when mounting.
APPLICATIONS
·Designed for high voltage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC(DC)
IB(DC)
PC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Base Current
VALUE
UNIT
V
160
160
V
5.0
V
1.5
A
0.15
20
A
Collector Power Dissipation
@TC=25℃
W
℃
℃
Junction Temperature
Storage Temperature
150
TJ
-55~150
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4370
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
CONDITIONS
MIN
TYP. MAX UNIT
V(BR)CEO
IC= 10mA ; IB= 0
160
V
IC= 500mA; IB= 50mA
IC= 500mA ; VCE= 5V
VCB= 160V ; IE= 0
1.5
1.0
1.0
1.0
240
V
VCE
(sat)
(on)
V
VBE
ICBO
μA
μA
IEBO
hFE
COB
fT
Emitter Cutoff Current
VEB= 5V; IC=0
DC Current Gain
IC= 100mA ; VCE= 5V
IE= 0 ; VCB= 10V;f= 1.0MHz
IC= 10m A ; VCE= 10V
70
Output Capacitance
25
pF
Current-Gain—Bandwidth Product
100
MHz
hFE Classifications
O
Y
70-140
120-240
2
isc Website：www.iscsemi.cn
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