2SC4371 [ISC]
isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
| 型号： | 2SC4371 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4371
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400(Min)
·Excellent Switching Times-
: tr= 1.0μs(Max), tf= 1.0μs(Max)@ IC= 4A
APPLICATIONS
·Switching regulator application
·High voltage switching application
·High Speed DC-DC converter application
·Fluorescent light ballastor application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
UNIT
V
500
400
V
7
V
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
5
A
ICM
7
A
IB
1
2
A
Collector Power Dissipation
@Ta=25℃
PC
W
Collector Power Dissipation
@TC=25℃
30
TJ
Junction Temperature
150
℃
℃
Storage Temperature Range
-55~150
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4371
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
MIN
400
500
TYP.
MAX
UNIT
V
IC= 10mA ; IB= 0
IC= 1mA ; IE= 0
IC= 5A; IB= 1A
IC= 5A; IB= 1A
VCB= 400V; IE= 0
VEB= 7V; IC= 0
IC= 3A ; VCE= 5V
IC= 5A ; VCE= 5V
V
1.0
1.5
100
1
V
VCE
(sat)
V
VBE
(sat)
ICBO
μA
mA
IEBO
hFE-1
hFE-2
Emitter Cutoff Current
DC Current Gain
12
8
DC Gurrent Gain
Switching times
Rise Time
1.0
2.5
1.0
μs
μs
μs
tr
tstg
tf
IB1= -IB2= 0.4A; VCC≈200V
RL= 50Ω;PW=20μs Duty≤1%
Storage Time
Fall Time
2
isc Website：www.iscsemi.cn
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