2SC4150_2014 [JMNIC]
Silicon NPN Power Transistors;
| 型号： | 2SC4150_2014 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：153K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4150
DESCRIPTION
·With ITO-220 package
·Switching power transistor
·Low saturation voltage
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (ITO-220) and symbol
3
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
UNIT
V
60
Open base
40
V
Open collector
7
12
V
A
ICM
Collector current-Peak
Base current
24
A
IB
2
A
IBM
Base current-Peak
3
A
PT
Total power dissipation
Junction temperature
Storage temperature
TC=25℃
25
W
℃
℃
Tj
150
-55~150
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal resistance junction case
MAX
UNIT
Rth j-C
5.0
℃/W
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4150
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
Collector-emitter sustaining voltage IC=0.1A ;IB=0
Collector-emitter saturation voltage IC=6A; IB=0.3A
40
V
V
V
0.3
1.2
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
IC=6A; IB=0.3A
At rated volatge
0.1
0.1
mA
mA
ICEO
IEBO
At rated volatge
IC=6A ; VCE=2V
IC=1.2A ; VCE=10V
hFE
70
fT
Transition frequency
50
MHz
Switching times
Turn-on time
0.3
1.5
0.5
μs
μs
μs
ton
ts
IC=6A;IB1=0.6A
IB2=0.6A ,RL=5Ω
VBB2=4V
Storage time
Fall time
tf
2
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4150
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3
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