2SC4153_01 [SANKEN]
Silicon NPN Triple Diffused Planar Transistor; 硅NPN三重扩散平面晶体管
| 型号： | 2SC4153_01 |
| 厂家： | 
SANKEN ELECTRIC |
| 描述： | Silicon NPN Triple Diffused Planar Transistor |
| 文件： | 总1页 (文件大小：28K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2 S C4 1 5 3
Silicon NPN Triple Diffused Planar Transistor ( Switchihg Transistor)
Application : Humidifier, DC-DC Converter, and General Purpose
External Dimensions FM20(TO220F)
■Absolute maximum ratings
■Electrical Characteristics
(Ta=25°C)
(Ta=25°C)
Ratings
Symbol
ICBO
Conditions
Ratings
100max
100max
120min
Symbol
Unit
µA
µA
V
±0.2
Unit
4.2
±0.2
10.1
c
0.5
2.8
VCBO
VCEO
VEBO
IC
200
VCB=200V
VEB=8V
V
IEBO
120
V
V(BR)CEO
hFE
IC=50mA
8
V
±0.2
ø3.3
a
b
VCE=4V, IC=3A
IC=3A, IB=0.3A
IC=3A, IB=0.3A
VCE=12V, IE=–0.5A
VCB=10V, f=1MHz
70 to 220
0.5max
1.2max
30typ
7(Pulse14)
3
A
IB
VCE(sat)
VBE(sat)
fT
V
V
A
PC
30(Tc=25°C)
150
W
°C
°C
±0.15
1.35
Tj
MHz
pF
±0.15
1.35
COB
110typ
Tstg
–55 to +150
+0.2
-0.1
0.85
+0.2
-0.1
0.45
±0.2
2.4
2.54
2.54
■Typical Switching Characteristics (Common Emitter)
±0.2
2.2
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
Weight : Approx 2.0g
a. Part No.
B
C E
50
16.7
3
10
–5
0.3
–0.6
0.5max
3max
0.5max
b. Lot No.
–
–
–
IC VCE Characteristics (Typical)
VCE(sat) IB Characteristics (Typical)
IC VBE Temperature Characteristics (Typical)
(VCE=4V)
3
7
7
5
5
4
3
2
1
0
6
5
4
3
2
1
2
1
0
IB=10mA
0
0
1
2
3
4
0.005 0.01
0.1
1
2
0
0.5
1.0 1.1
Collector-Emitter Voltage VCE(V)
Base Current IB(A)
Base-Emittor Voltage VBE(V)
–
–
–
hFE IC Characteristics (Typical)
hFE IC Temperature Characteristics (Typical)
θ
j-a t Characteristics
(VCE=4V)
(VCE=4V)
5
300
300
Typ
100
50
100
50
1
0.5
20
0.01
20
0.01
0.2
1
10
100
1000
0.1
0.5
1
5
7
0.1
0.5
1
5
7
Collector Current IC(A)
Collector Current IC(A)
Time t(ms)
–
fT IE Characteristics (Typical)
Safe Operating Area (Single Pulse)
–
Pc Ta Derating
(VCE=12V)
30
20
10
20
10
5
40
30
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
Typ
150x150x2
100x100x2
20
1
0.5
Without Heatsink
Natural Cooling
50x50x2
10
0
0.1
Without Heatsink
2
0
0.05
–0.01
–0.1
–1
–5
5
10
50
100
200
0
25
50
75
100
125
150
Collector-Emitter Voltage VCE(V)
Ambient Temperature Ta(˚C)
Emitter Current IE(A)
94
相关型号：
2SC4154-11-1E
Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SC-70, SUPERMINI-3
MITSUBISHI
2SC4154-11-1F
Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SC-70, SUPERMINI-3
MITSUBISHI
2SC4154-11-1G
Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SC-70, SUPERMINI-3
MITSUBISHI
2SC4154-13-1E
Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SC-62, 3 PIN
MITSUBISHI
2SC4154-13-1F
Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SC-62, 3 PIN
MITSUBISHI
2SC4154-13-1G
Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SC-62, 3 PIN
MITSUBISHI
2SC4154-T11-1E
Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SC-70, SUPERMINI-3
MITSUBISHI
2SC4154-T11-1F
Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SC-70, SUPERMINI-3
MITSUBISHI
2SC4154-T11-1G
Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SC-70, SUPERMINI-3
MITSUBISHI
©2020 ICPDF网 联系我们和版权申明