2SC4153 [JMNIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC4153 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总4页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4153
DESCRIPTION
·With TO-220F package
·Switching transistor
APPLICATIONS
·For humidifier ,DC-DC converter
and general purpose applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-220F) and symbol
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-peak
Base current (DC)
CONDITIONS
Open emitter
VALUE
UNIT
V
200
Open base
120
V
Open collector
8
V
7
14
A
ICM
A
IB
3
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
30
W
℃
℃
Tj
150
-55~150
Tstg
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4153
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
IC=50mA ;IB=0
MIN
TYP.
MAX
UNIT
V
120
IC=3A ;IB=0.3A
IC=3A; IB=0.3A
VCB=200V; IE=0
VEB=8V; IC=0
0.5
1.2
0.1
0.1
250
220
V
V
mA
mA
IEBO
hFE-1
DC current gain
IC=0.6A ; VCE=4V
IC=3A ; VCE=4V
IE=-0.5A ; VCE=12V
f=1MHz;VCB=10V
70
70
hFE-2
DC current gain
fT
Transition frequency
30
MHz
pF
COB
Collector output capacitance
110
Switching times
ton Turn-on time
ts
0.5
3.0
0.5
μs
μs
μs
IC=3A
IB1=0.3A ,IB2=-0.6A
Storage time
Fall time
VCC=50V, RL=16.7Ω
tf
2
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4153
PACKAGE OUTLINE
Fig.2 outline dimensions
3
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4153
4
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