2SC4152 [PANASONIC]
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching); 硅NPN三重扩散平面类型（高击穿电压高速开关）
| 型号： | 2SC4152 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) |
| 文件： | 总3页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SC4152
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
10.0±0.2
5.5±0.2
4.2±0.2
Features
High-speed switching
■
2.7±0.2
●
●
High collector to base voltage VCBO
φ3.1±0.1
●
Wide area of safe operation (ASO)
●
Satisfactory linearity of foward current transfer ratio hFE
●
Full-pack package which can be installed to the heat sink with
one screw
1.3±0.2
1.4±0.1
Absolute Maximum Ratings (T =25˚C)
+0.2
–0.1
■
C
0.5
0.8±0.1
Parameter
Symbol
VCBO
VCER
VCEO
VEBO
ICP
Ratings
Unit
V
Collector to base voltage
1400
2.54±0.25
1400
V
5.08±0.5
Collector to emitter voltage
1
2
3
700
V
1:Base
2:Collector
3:Emitter
Emitter to base voltage
Peak collector current
Collector current
5
V
1.0
A
TO–220 Full Pack Package(a)
IC
0.3
A
Collector power TC=25°C
20
PC
W
dissipation
Ta=25°C
2
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
–55 to +150
Electrical Characteristics (T =25˚C)
■
C
Parameter
Symbol
ICBO
Conditions
min
typ
max
10
Unit
µA
µA
V
Collector cutoff current
Emitter cutoff current
VCB = 1100V, IE = 0
VEB = 4V, IC = 0
C = 1mA, RBE = 100Ω
IEBO
VCER
VCEO
VEBO
hFE
10
I
1400
700
5
Collector to emitter voltage
IC = 1mA, IB = 0
IE = 1mA, IC = 0
V
Emitter to base voltage
V
Forward current transfer ratio
V
CE = 5V, IC = 30mA
10
40
2
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
IC = 60mA, IB = 6mA
IC = 60mA, IB = 6mA
V
V
2
Transition frequency
Collector output capacitance
Turn-on time
fT
V
CE = 10V, IC = 30mA, f = 1MHz
12
6
MHz
pF
µs
Cob
ton
tstg
tf
VCB = 100V, IE = 0, f = 1MHz
2
3
1
IC = 0.15A, IB1 = 15mA, IB2 = –30mA,
VCC = 250V
Storage time
µs
Fall time
µs
1
Power Transistors
2SC4152
PC — Ta
IC — VCE
VCE(sat) — IC
40
120
100
80
60
40
20
0
100
IC/IB=10
(1) TC=Ta
(2) With a 100 × 100 × 2mm
TC=25˚C
IB=5mA
4mA
30
10
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
30
20
10
0
3mA
3
1
2mA
(1)
(2)
TC=100˚C
0.3
0.1
1mA
25˚C
(3)
(4)
–25˚C
0.03
0.01
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
0.001 0.003 0.01 0.03
0.1
0.3
1
(
)
(
V
)
( )
A
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
Collector current IC
VBE(sat) — IC
hFE — IC
fT — IC
100
1000
1000
IC/IB=10
VCE=5V
VCE=10V
f=1MHz
TC=25˚C
30
10
300
100
300
100
25˚C
TC=100˚C
3
1
30
10
30
10
–25˚C
TC=–25˚C
25˚C
100˚C
0.3
0.1
3
1
3
1
0.001 0.003 0.01 0.03
0.1
0.3
1
0.001 0.003 0.01 0.03
0.1
0.3
1
0.001 0.003 0.01 0.03
0.1
0.3
1
( )
A
(
A
)
( )
Collector current IC A
Collector current IC
Collector current IC
Cob — VCB
ton, tstg, tf — IC
Area of safe operation (ASO)
1000
100
10
IE=0
f=1MHz
TC=25˚C
Pulsed tw=1ms
Duty cycle=1%
IC/IB=5
Non repetitive pulse
TC=25˚C
30
10
3
1
300
100
(2IB1=–IB2
)
V
CC=250V
t=1ms
TC=25˚C
3
1
0.3
0.1
tstg
ton
10ms
30
10
DC
0.3
0.1
0.03
0.01
tf
3
1
0.03
0.01
0.003
0.001
1
3
10
30
100
0
0.2
0.4
0.6
0.8
1
3
10
30
100 300 1000
( )
V
(
A
)
( )
Collector to emitter voltage VCE V
Collector to base voltage VCB
Collector current IC
2
Power Transistors
2SC4152
Area of safe operation, reverse bias ASO
Reverse bias ASO measuring circuit
1.6
Lcoil=200µH
L coil
IC/IB=10
(IB1=–IB2
TC=25˚C
1.4
)
T.U.T
IC
1.2
1.0
0.8
0.6
0.4
0.2
0
IB1
ICP
–IB2
Vin
VCC
V
clamp
IC
tW
<1mA
200 400 600 800 1000 1200 1400 1600
0
( )
V
Collector to emitter voltage VCE
Rth(t) — t
10000
1000
100
10
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) PT=10V × 0.2A (2W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
(1)
(2)
1
0.1
10–4
10–3
10–2
10–1
1
10
102
103
104
( )
s
Time
t
3
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