2SC3873_2014 [JMNIC]
Silicon NPN Power Transistors;
| 型号： | 2SC3873_2014 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SC3873
DESCRIPTION
·
·With TO-3PFa package
·High VCBO
·High speed switching
·Good linearity of hFE
·Wide area of safe operation
APPLICATIONS
·For high speed switching applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
3
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
500
400
7
UNIT
V
Open base
V
Open collector
V
12
A
ICM
Collector current-peak
Base current
22
A
IB
5
A
TC=25℃
Ta=25℃
100
3
PC
Collector power dissipation
W
Tj
Junction temperature
Storage temperature
150
-55~150
℃
℃
Tstg
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Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SC3873
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=10mA;IB=0
400
IC=7A ;IB=1.4A
IC=7A ;IB=1.4A
VCB=500V; IE=0
VEB=5V; IC=0
1.0
1.5
V
V
100
100
μA
μA
IEBO
hFE-1
DC current gain
IC=0.1A ; VCE=5V
IC=7A ; VCE=5V
IC=0.5A ; VCE=10V
15
8
hFE-2
DC current gain
fT
Transition frequency
30
MHz
Switching times
ton
tstg
tf
Turn-on time
0.7
2.0
0.3
μs
μs
μs
IC=7A; VCC=150V
IB1=1.4A;IB2=-2.8A
Storage time
Fall time
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SC3873
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
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