2SC3874 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC3874 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总4页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3874
DESCRIPTION
·With TO-3PL package
·High speed switching
·High VCBO
·Wide area of safe operation
APPLICATIONS
·For high-speed switching applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3PL) and symbol
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
500
400
7
UNIT
V
Open base
V
Open collector
V
15
A
ICM
Collector current-peak
Base current
25
A
IB
5
A
Ta=25℃
TC=25℃
3.5
PC
Collector power dissipation
W
150
150
-55~150
Tj
Junction temperature
Storage temperature
℃
℃
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3874
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=10mA ;IB=0
400
IC=10A ;IB=2A
1.0
1.5
V
IC=10A ;IB=2A
V
VCB=500V; IE=0
VEB=5V; IC=0
100
100
μA
μA
IEBO
hFE-1
DC current gain
IC=0.1A ; VCE=5V
IC=10A ; VCE=5V
IC=1A ; VCE=10V;f=1MHz
15
8
hFE-2
DC current gain
fT
Transition frequency
20
MHz
Switching times
ton
tstg
tf
Turn-on time
0.7
2.0
0.3
μs
μs
μs
IC=10A; VCC=150V
IB1=2A;IB2=-4A
Storage time
Fall time
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3874
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.50mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3874
4
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