2SC388 [SECOS]

NPN Plastic-Encapsulated Transistor; NPN塑料封装晶体管
2SC388
型号: 2SC388
厂家: SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述:

NPN Plastic-Encapsulated Transistor
NPN塑料封装晶体管

晶体 晶体管
文件: 总2页 (文件大小:116K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2SC388  
0.05A , 30V  
NPN Plastic-Encapsulated Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
TO-92  
FEATURES  
TV Final picture if amplifier applications  
G
H
Emitter  
Collector  
Base  
J
A
D
Millimeter  
REF.  
Min.  
4.40  
4.30  
12.70  
3.30  
0.36  
0.36  
Max.  
4.70  
4.70  
-
3.81  
0.56  
0.51  
B
A
B
C
D
E
F
K
E
C
F
G
H
J
1.27 TYP.  
1.10  
2.42  
0.36  
-
2.66  
0.76  
K
Collector  
  
  
Base  
  
Emitter  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol  
Rating  
Unit  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
VCBO  
VCEO  
VEBO  
IC  
30  
V
V
25  
4
50  
V
Collector Current - Continuous  
Collector Power Dissipation  
Junction, Storage Temperature  
mA  
mW  
°C  
PC  
300  
TJ, TSTG  
150, -55~150  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol Min.  
Typ. Max.  
Unit  
Test Condition  
Collector to Base Breakdown Voltage  
Collector to Emitter Breakdown Voltage  
Emitter to Base Breakdown Voltage  
Collector Cut – Off Current  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
30  
25  
4
-
-
-
-
-
-
-
-
-
-
-
-
V
V
IC=10μA, IE=0  
IC=5mA, IB=0  
-
V
IE=10μA, IC=0  
-
0.1  
0.1  
200  
0.2  
1.2  
-
μA  
μA  
VCB=30V, IE=0  
Emitter Cut – Off Current  
IEBO  
-
VEB=3V, IC=0  
DC Current Gain  
hFE  
20  
-
VCE=12.5V, IC=12.5mA  
IC=15mA, IB=1.5mA  
IC=15mA, IB=1.5mA  
Collector to Emitter Saturation Voltage  
Base to Emitter Saturation voltage  
Transition Frequency  
VCE(sat)  
VBE(sat)  
fT  
V
V
-
300  
0.8  
MHz VCE=12.5V, IC=12.5mA  
Collector Output Capacitance  
Cob  
2
pF  
VCB=10V, IE=0, f=1MHz  
CC=12.5V, IE=-12.5mA,  
f=45MHz  
V
Power Gain  
Gpe  
28  
-
36  
dB  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
10-Mar-2011 Rev. A  
Page 1 of 2  
2SC388  
0.05A , 30V  
NPN Plastic-Encapsulated Transistor  
Elektronische Bauelemente  
CHARACTERISTIC CURVES  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
10-Mar-2011 Rev. A  
Page 2 of 2  

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