2SC3874 [PANASONIC]
Silicon NPN triple diffusion planar type; 硅NPN三重扩散平面型
| 型号： | 2SC3874 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN triple diffusion planar type |
| 文件： | 总3页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SC3874
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
φ 3.3±0.2
5.0±0.3
20.0±0.5
3.0
Features
High-speed switching
■
●
●
High collector to base voltage VCBO
●
Wide area of safe operation (ASO)
●
1.5
Satisfactory linearity of foward current transfer ratio hFE
1.5
2.0±0.3
Absolute Maximum Ratings (T =25˚C)
■
C
2.7±0.3
3.0±0.3
Parameter
Symbol
VCBO
VCES
VCEO
VEBO
ICP
Ratings
Unit
V
1.0±0.2
0.6±0.2
Collector to base voltage
500
5.45±0.3
500
V
Collector to emitter voltage
10.9±0.5
400
V
Emitter to base voltage
Peak collector current
Collector current
7
V
1:Base
2:Collector
3:Emitter
25
A
1
2
3
IC
15
A
TOP–3L Package
Base current
IB
5
150
A
Collector power TC=25°C
PC
W
dissipation
Ta=25°C
3.5
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
–55 to +150
Electrical Characteristics (T =25˚C)
■
C
Parameter
Symbol
ICBO
Conditions
min
typ
max
100
100
Unit
µA
µA
V
Collector cutoff current
Emitter cutoff current
VCB = 500V, IE = 0
VEB = 5V, IC = 0
C = 10mA, IB = 0
IEBO
VCEO
hFE1
hFE2
Collector to emitter voltage
I
400
15
8
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 10A
Forward current transfer ratio
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
I
C = 10A, IB = 2A
1.0
1.5
V
V
IC = 10A, IB = 2A
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
VCE = 10V, IC = 1A, f = 1MHz
20
MHz
µs
0.7
2.0
0.3
IC = 10A, IB1 = 2A, IB2 = –4A,
VCC = 150V
µs
µs
1
Power Transistors
2SC3874
PC — Ta
IC — VCE
VCE(sat) — IC
200
20
16
12
8
10
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=3.5W)
IC/IB=5
TC=25˚C
IB=2A
175
150
125
100
75
3
1
(1)
1A
0.8A
TC=100˚C
25˚C
0.6A
0.3
0.1
–25˚C
0.4A
0.3A
50
0.2A
0.1A
4
0.03
0.01
25
(2)
(3)
0
0
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
0.1
0.3
1
3
10
(
)
(
V
)
( )
A
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
Collector current IC
VBE(sat) — IC
hFE — IC
fT — IC
10
3000
1000
IC/IB=5
VCE=10V
f=1MHz
TC=25˚C
VCE=5V
300
100
1000
3
1
300
100
TC=–25˚C
30
10
100˚C
25˚C
25˚C
0.3
0.1
TC=100˚C
30
10
3
1
–25˚C
0.03
0.01
3
1
0.3
0.1
0.1
0.3
1
3
10
0.1
0.3
1
3
10
30
0.01 0.03
0.1
0.3
1
3
10
( )
A
(
A
)
( )
Collector current IC A
Collector current IC
Collector current IC
Cob — VCB
ton, tstg, tf — IC
Area of safe operation (ASO)
10000
100
100
IE=0
f=1MHz
TC=25˚C
Pulsed tw=1ms
Duty cycle=1%
IC/IB=5
Non repetitive pulse
TC=25˚C
ICP
IC
3000
1000
30
10
30
10
t=0.5ms
1ms
(2IB1=–IB2
CC=150V
TC=25˚C
)
V
10ms
DC
300
100
3
1
3
1
tstg
30
10
0.3
0.1
0.3
0.1
ton
tf
3
1
0.03
0.01
0.03
0.01
0.1
0.3
1
3
10
30
100
0
5
10
15
20
25
1
3
10
30
100 300 1000
( )
V
(
A
)
( )
Collector to emitter voltage VCE V
Collector to base voltage VCB
Collector current IC
2
Power Transistors
2SC3874
Area of safe operation, reverse bias ASO
Reverse bias ASO measuring circuit
40
Lcoil=200µH
IC/IB=5
L coil
35
(2IB1=–IB2
TC=25˚C
Clamped
)
T.U.T
IC
30
25
20
15
10
5
IB1
ICP
–IB2
Vin
VCC
IC
V
clamp
tW
0
0
100 200 300 400 500 600 700 800
( )
V
Collector to emitter voltage VCE
Rth(t) — t
102
10
(1) PT=10V × 0.3A (3W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
(1)
(2)
1
10–1
10–2
10–3
10–2
10–1
1
10
102
103
104
105
( )
s
Time
t
3
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