2SC3658_15 [JMNIC]
Silicon NPN Power Transistors;
| 型号： | 2SC3658_15 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon NPN Power Transistors
2SC3658
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
·Built-in damper diode
APPLICATIONS
·For color TV horizontal deflection output
applications
PINNING(see Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
3
Absolute maximum ratings(Ta=℃)
SYMBOL
VCBO
VEBO
IC
PARAMETER
Collector-base voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
UNIT
V
1500
Open collector
6
V
5
6
A
ICM
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
A
PC
TC=25℃
50
W
℃
℃
Tj
150
Tstg
-45~150
JMnic
Product Specification
Silicon NPN Power Transistors
2SC3658
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
2.0
UNIT
V
Collector-emitter saturation voltage IC=5A; IB=1.25A
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=5A; IB=1.25A
VCB=1200V; IE=0
VEB=6V; IC=0
1.5
V
0.5
mA
mA
IEBO
500
hFE
IC=1A ; VCE=5V
IF=6A
8
VECF
Diode forward voltage
Fall time
2.0
0.5
V
tf
IC=5A ; IB1=1A;IB2=-2.5A;LB=0
μs
2
JMnic
Product Specification
Silicon NPN Power Transistors
2SC3658
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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