2SC3661 [KEXIN]
NPN Epitaxial Planar Silicon Transistor; NPN外延平面硅晶体管
| 型号： | 2SC3661 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Epitaxial Planar Silicon Transistor |
| 文件： | 总1页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistor
2SC3661
SOT-23
Unit: mm
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Features
3
Low frequency general-purpose amplifiers, drivers, muting circuit.
Adoption of FBET process.
1
2
High DC current gain (hFE=800 to 3200).
Low collector-to-emitter saturation voltage (VCE(sat) 0.5V).
High VEBO (VEBO 15V).
+0.1
0.95
-0.1
+0.05
-0.01
0.1
+0.1
1.9
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
30
Unit
V
Collector-emitter voltage
Emitter-base voltage
Collector current
25
V
15
V
300
mA
mA
mW
Collector current (pulse)
Collector dissipation
Junction temperature
Storage temperature
Icp
500
PC
200
Tj
125
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
VCB = 20V, IE=0
Min
Typ
Max
Unit
ìA
Collector cutoff current
ICBO
IEBO
hFE
fT
0.1
0.1
Emitter cutoff current
VEB = 10V, IC=0
ìA
DC current gain
VCE =5V , IC = 10mA
VCE = 10V , IC = 10mA
VCB = 10V , f = 1.0MHz
800 1500 3200
Gain bandwidth product
250
2.7
MHz
pF
V
Output capacitance
Cob
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
VCE(sat) IC = 200mA , IB = 4mA
VBE(sat) IC = 200mA , IB = 4mA
V(BR)CBO IC = 10ìA , IE = 0
V(BR)CEO IC = 1mA , IB = 0
V(BR)EBO IE = 10ìA , IC = 0
0.12
0.85
0.5
1.2
V
30
25
15
V
V
V
Marking
Marking
FY
1
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