2SC3663 [NEC]
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION; NPN外延硅晶体管高频低噪声放大
| 型号： | 2SC3663 |
| 厂家： | 
NEC |
| 描述： | NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
| 文件： | 总8页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
SILICON TRANSISTOR
2SC3663
NPN EPITAXIAL SILICON TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
FEATURES
PACKAGE DIMENSIONS (in mm)
•
Low-voltage, low-current, low-noise and high-gain
2.8 ± 0.2
1.5
NF = 3.0 dB TYP.
GA = 3.5 dB TYP.
@VCE = 1 V, IC = 250 PA, f = 1.0 GHz
@VCE = 1 V, IC = 250 PA, f = 1.0 GHz
0.65+–00..115
•
Ideal for battery drive of pagers, compact radio equipment,
cordless phones, etc.
B
E
•
•
Gold electrode gives high reliability.
Mini mold package, ideal for hybrid ICs.
C
ABSOLUTE MAXIMUM RATINGS (TA = 25 qC)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
UNIT
V
Marking
15
8
V
2
V
5
50
mA
mW
qC
qC
PIN CONNECTIONS
Total Power Dissipation
Junction Temperature
Storage Temperature
PT
E: Emitter
B: Base
C: Collector
Tj
150
Tstg
ð65 to +150
Marking: R62
ELECTRICAL CHARACTERISTICS (TA = 25 qC)
PARAMETER
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
SYMBOL
ICBO
TEST CONDITIONS
VCB = 5 V, IE = 0
MIN.
TYP.
MAX.
0.1
UNIT
PA
IEBO
VEB = 1 V, IC = 0
0.1
PA
hFE
VCE = 1 V, IC = 250 PA, pulse
VCE = 1 V, IC = 1 mA
50
100
4
250
Gain Bandwidth Product
Insertion Power Gain
Maximum Available Gain
Noise Figure
fT
GHz
dB
dB
dB
dB
pF
2
°S21e°
VCE = 1 V, IC = 1 mA, f = 1 GHz
VCE = 1 V, IC = 1 mA, f = 1 GHz
VCE = 1 V, IC = 250 PA, f = 1.0 GHz
VCE = 1 V, IC = 250 PA, f = 1.0 GHz
4.0
6.5
12.5
3.0
3.5
0.4
MAG
NF
GA
4.5
0.6
Associated Power Gain
Collector Capacitance
C
obNote
V
CB
= 1 V, I = 0, f = 1.0 MHz
E
Note Measured using 3-pin bridge, with emitter pin connected to the bridge guard pin.
Document No. P10406EJ1V0DS00 (1st edition)
Date Published August 1997 N
Printed in Japan
©
1997
2SC3663
hFE CLASSIFICATION
RANK
Marking
hFE
K/PNote
R62
50 to 250
Note Existing rank classification/newly added rank
2
2SC3663
TYPICAL CHARACTERISTICS (TA = 25 qC)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
INSERTION POWER GAIN vs. FREQUENCY
V
CE = 1 V
VCE = 1 V
10
IC = 1 mA
10
8
6
4
5
2
1
0
0.1
0.1
1
10
1
10
I
C
- Collector Current - mA
f - Frequency - GHz
INSERTION POWER GAIN vs. COLLECTOR
CURRENT
MAXIMUM AVAILABLE GAIN vs. FREQUENCY
V
CE = 1 V
V
CE = 1 V
40
20
0
f = 1.0 GHz
IC = 1 mA
10
20
10
0
5
0
0.1
0.1
1
10
1
10
f - Frequency - GHz
IC - Collector Current - mA
NOISE FIGURE AND POWER GAIN AT OPUTIMUM NF
vs. COLLECTOR CURRENT
VCE = 1 V
f = 1.0 GHz
10
5
G
A
NF
0
0.1
1
10
IC - Collector Current - mA
3
2SC3663
0.15
70
0.10
0.40
90
0.2
0 . 8
600
0 . 7
1.6
0.2
0 . 6
1.8
VCE = 1 V
= 1 mA
T
40
I
C
P
M
CO
30
A
T
)
C
O
+JX
R
4.0
––––
(
E
V
Z
I
T
I
20
OS
P
1 . 0
0 . 2
0 . 8
10
0 . 1
0 . 4
50
0.25
0.25
0
REACTANCE COMPONENT
5 0
R
–––
(
)
Z
O
0.4
0.1
2.0
0.2 GHz
0.6
1.8
1.6
0.2
– 1 6 0
1.4
0.4
1 . 0
1.2
)
O M
1.0
0.6
0.8
O
E
C
(
J X – – – –
Z
N
–
E
0 . 2 0
R
S11
0 . 3 0
G
0 . 4
N E
0 . 2
0.6
– 6 0
0.7
– 7 0
1 . 2
0 . 1 5
– 9 0
0 . 1 0
0 . 4 0
0.15
0.10
90
0.40
70
0.2
0 . 8
600
0 . 7
1.6
0.2
0 . 6
1.8
VCE = 1 V
= 1 mA
T
40
I
C
P
M
CO
30
A
T
)
C
O
+JX
R
4.0
––––
(
E
V
Z
I
T
I
20
OS
P
1 . 0
0 . 2
0 . 8
10
0 . 1
0 . 4
50
0.25
0.25
0
REACTANCE COMPONENT
5 0
R
–––
(
)
Z
O
0.2 GHz
0.4
0.1
S
22
0.6
0.4
0.6
0.8
0.2
2.0
1.2
– 1 6 0
1.6
0.8
1 . 0
)
O M
1.0
O
1.4
1.8
E
C
(
N
–
J X – – – –
Z
E
0 . 2 0
R
0 . 3 0
G
0 . 4
N E
0 . 2
0.6
– 6 0
0.7
– 7 0
1 . 2
0 . 1 5
– 9 0
0 . 1 0
0 . 4 0
4
2SC3663
[MEMO]
5
2SC3663
[MEMO]
6
2SC3663
[MEMO]
7
2SC3663
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consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
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property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
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the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
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"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
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