2SC3665-O [TOSHIBA]
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TOSHIBA 
2SC3665
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3665
Audio Power Amplifier Applications
Unit: mm
Driver-Stage Amplifier Applications
•
Complementary to 2SA1425.
Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V
V
V
120
120
V
V
CBO
CEO
EBO
5
V
I
800
mA
mA
mW
°C
°C
C
Base current
I
B
80
Collector power dissipation
Junction temperature
P
1000
150
C
T
j
JEDEC
JEITA
―
―
Storage temperature range
T
−55 to 150
stg
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
= 120 V, I = 0
Min
Typ.
Max
Unit
Collector cut-off current
I
I
V
V
―
―
―
―
―
―
100
100
―
nA
nA
V
CBO
CB
E
Emitter cut-off current
= 5 V, I = 0
C
EBO
EB
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V
V
I
= 10 mA, I = 0
120
5
(BR) CEO
(BR) EBO
C
E
B
I
= 1 mA, I = 0
―
V
C
h
FE
DC current gain
V
CE
= 5 V, I = 100 mA
80
―
240
C
(Note)
Collector-emitter saturation voltage
Base-emitter voltage
V
I
= 500 mA, I = 50 mA
―
―
―
―
―
―
1.0
1.0
―
V
V
CE (sat)
C
B
V
BE
V
V
V
= 5 V, I = 500 mA
C
CE
CE
CB
Transition frequency
f
= 5 V, I = 100 mA
120
―
MHz
pF
T
C
Collector output capacitance
C
ob
= 10 V, I = 0, f = 1 MHz
30
E
Note: h classification O: 80 to 160, Y: 120 to 240
FE
Marking
C3665
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Characteristics
indicator
1
2004-07-07
2SC3665
I
– V
h – I
FE C
C
CE
1000
800
600
400
200
0
1000
Common emitter
Ta = 25°C
Common emitter
= 5 V
500
300
V
CE
15
10
7
Ta = 100°C
5
4
3
25
100
50
−25
2
20
3
10
30
100
300
(mA)
1000
I
B
= 1 mA
Collector current
I
C
0
0
2
4
6
8
10
12
(V)
14
Collector-emitter voltage
V
CE
V
– I
C
I – V
C BE
CE (sat)
0.5
0.3
800
600
400
200
0
Common emitter
Common emitter
I
C
/I = 10
B
V
CE
= 5 V
Ta = 100°C
25
0.1
0.05
0.03
−25
Ta = 100°C
25
−25
0.01
3
10
30
100
300
(mA)
1000
Collector current
I
C
0
0.2
0.4
0.6
0.8
1.0
(V)
1.2
Base-emitter voltage
V
BE
Safe Operating Area
5
3
P
C
– Ta
I
C
max (pulsed)*
1 ms*
10 ms*
I
max (continuous)
C
1
1.2
1.0
0.8
0.6
0.4
0.2
0
0.5
0.3
100 ms*
DC operation
Ta = 25°C
0.1
0.05
0.03
0.01
*: Single nonrepetitive pulse
Ta = 25°C
0.005
0.003
Curves must be derated linearly
with increase in temperature.
0.001
0
20
40
60
80
100
120
140
160
0.3
1
3
10
30
100
300
(V)
1000
Ambient temperature Ta (°C)
Collector-emitter voltage
V
CE
2
2004-07-07
2SC3665
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
3
2004-07-07
相关型号：
2SC3666-O
TRANSISTOR 1000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-7D101A, 3 PIN, BIP General Purpose Small Signal
TOSHIBA
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