2SC3659 [ISC]
isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
| 型号： | 2SC3659 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC3659
DESCRIPTION
·High Breakdown Voltage-
: VCES= 1700V (Min)
·Built-in Damper Didoe
APPLICATIONS
·Designed for high voltage, high power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCES
VEBO
IC
PARAMETER
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
1700
6
UNIT
V
V
Collector Current- Continuous
8
A
Collector Power Dissipation
@ TC=25℃
PC
50
W
TJ
Junction Temperature
150
℃
℃
Storage Temperature Range
-45~150
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC3659
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
CONDITIONS
MIN
TYP. MAX UNIT
IC= 5A; IB= 1.25A
2.0
1.5
0.5
500
2.0
0.5
V
V
VCE
(sat)
IC= 5A; IB= 1.25A
VCE= 1400V; IE= 0
VEB= 6V; IC= 0
IF= 6A
VBE
(sat)
ICBO
mA
mA
V
IEBO
VECF
tf
C-E Diode Forward Voltage
Fall Time
μs
IC= 5A, IB = 1A, IB = -2.5A, LB= 0
1
2
2
isc Website：www.iscsemi.cn
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