2SC2482O(TO-92MOD) [JCST]
Transistor;
| 型号： | 2SC2482O(TO-92MOD) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：292K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
TO-92MOD
2SC2482
TRANSISTOR (NPN)
1. EMITTER
FEATURE
z
High Voltage :Vceo=300V
Small Collector Output Capacitance: Cob=3.0pF(Typ)
2. COLLECTOR
z
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
300
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
300
V
7
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
0.1
A
PC
0.9
W
℃
℃
TJ
150
Tstg
Storage Temperature
-55-150
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC= 100μA, IE=0
IC= 3mA ,IB=0
IE= 100μA,IC=0
300
300
7
V
V
V
Collector cut-off current
Collector cut-off current
Emitter cut-off current
ICBO
ICEO
IEBO
VCB= 240 V, IE=0
1.0
5.0
1.0
150
1.0
1.0
μA
μA
μA
VCB= 220 V, IB=0
VEB= 7V, IC=0
DC current gain
hFE
VCE=10V, IC=20mA
IC= 10mA, IB=1mA
IC=10mA, IB=1mA
VCE=10V, IC=20mA,f=30MHz
VCB=20V, IE=0, f=1MHz
30
50
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat)
VBE(sat)
f T
V
V
MHz
pF
3
Collector output capacitance
Cob
CLASSIFICATION OF hFE
Rank
O
Y
Range
30-90
90-150
A,Jun,2011
相关型号：
2SC2482Y-BP
Small Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC, TO-92MOD, 3 PIN
MCC
©2020 ICPDF网 联系我们和版权申明