2SC2484 [ISC]
Silicon NPN Power Transistor; 硅NPN功率晶体管
| 型号： | 2SC2484 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：227K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC2484
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
·High Power Dissipation
·Complement to Type 2SA1060
APPLICATIONS
·Designed for high power audio frequency amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emtter Voltage
Emitter-Base Voltage
VALUE
UNIT
V
80
80
V
5
V
Collector Current-Continuous
Collector Current-Peak
5
8
A
ICM
A
Collector Power Dissipation
@ TC=25℃
PC
60
W
℃
℃
TJ
Junction Temperature
150
Storage Temperature Range
-55~150
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC2484
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Emitter Cutoff Current
CONDITIONS
MIN
TYP. MAX UNIT
V(BR)CEO
IC= 30mA; IB= 0
80
V
IC= 3A; IB= 0.3A
IC= 3A; VCE= 5V
VCB= 80V; IE= 0
VEB= 3V; IC= 0
2.0
1.8
50
V
VCE
VBE
(sat)
V
(on)
ICBO
μA
μA
IEBO
hFE-1
hFE-2
hFE-3
fT
50
DC Current Gain
IC= 20mA ; VCE= 5V
IC= 1A ; VCE= 5V
IC= 3A; VCE= 5
C= 0.5A; VCE= 5V
20
40
20
DC Current Gain
220
DC Current Gain
Current-Gain—Bandwidth Product
20
MHz
hFE-2 Classifications
R
Q
P
40-80
60-120
100-200
2
isc Website：www.iscsemi.cn
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