2SC2485 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC2485 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2485
DESCRIPTION
·With TO-3PN package
·Complement to type 2SA1061
·High collector power dissipation
APPLICATIONS
·High power audio frequency amplifier
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3PN) and symbol
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
CONDITIONS
MAX
100
100
5
UNIT
V
Open emitter
Open base
V
Open collector
V
Collector current (DC)
Collector current (Pulse)
Collector power dissipation
Junction temperature
Storage temperature
6
A
ICP
10
A
PC
TC=25℃
70
W
℃
℃
Tj
150
-55~150
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2485
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBE
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=10mA ;IB=0
100
IC=4A; IB=0.4A
IC=4A;VCE=5V
VCB=100V; IE=0
VEB=3V; IC=0
2.0
1.8
50
V
V
ICBO
μA
μA
IEBO
50
hFE-1
hFE-2
hFE-3
fT
IC=0.2A ; VCE=5V
IC=1A ; VCE=5V
IC=4A ; VCE=5V
IC=0.5A ; VCE=5V
20
40
20
DC current gain
200
DC current gain
Transition frequency
20
MHz
hFE-2 Classifications
R
Q
P
40-80
60-120
100-200
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2485
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
相关型号：
©2020 ICPDF网 联系我们和版权申明