2SC2485 [JMNIC]
Silicon Power Transistors; 硅功率晶体管
| 型号： | 2SC2485 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon Power Transistors |
| 文件： | 总3页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product Specification
www.jmnic.com
Silicon Power Transistors
2SC2485
DESCRIPTION
·With TO-3PN package
·Complement to type 2SA1061
·High collector power dissipation
APPLICATIONS
·High power audio frequency amplifier
PINNING
PIN
DESCRIPTION
1
Base
Collector;connected to
mounting base
2
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
LIMITING VALUES
SYMBOL
PARAMETER
CONDITIONS
Open emitter
MAX
UNIT
VCBO
VCEO
VEBO
IC
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
100
V
Open base
100
V
V
Open collector
5
6
Collector current (DC)
Collector current (Pulse)
Collector power dissipation
Junction temperature
Storage temperature
A
ICP
10
A
PC
TC=25℃
70
W
℃
℃
Tj
150
-55~150
Tstg
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Product Specification
Silicon
www.jmnic.com
Power
Transistors
2SC2485
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO
Collector-emitter breakdown voltage
IC=10mA ;IB=0
IC=4A IB=0.4A
IC=4A;VCE=5V
VCB=100V IE=0
VEB=3V; IC=0
100
V
VCEsat
VBE
Collector-emitter saturation voltage
Emitter-base on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
2.0
1.8
50
V
V
ICBO
IEBO
hFE-1
hFE-2
hFE-3
fT
μA
μA
50
IC=0.2A ; VCE=5V
IC=1A ; VCE=5V
IC=4A ; VCE=5V
IC=0.5A ; VCE=5V
20
40
20
DC current gain
200
DC current gain
Transition frequency
20
MHz
ꢀ hFE-2 Classifications
R
Q
P
40-80
60-120
100-200
JMnic
Product Specification
www.jmnic.com
Silicon Power Transistors
2SC2485
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
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