T0900EA45A [IXYS]
Insulated Gate Bipolar Transistor, 1212A I(C), 4500V V(BR)CES, N-Channel,;
| 型号： | T0900EA45A |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Insulated Gate Bipolar Transistor, 1212A I(C), 4500V V(BR)CES, N-Channel, 栅 晶体管 |
| 文件： | 总8页 (文件大小：330K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Date:- 20 Sep, 2006
Data Sheet Issue:- 4
WESTCODE
An IXYS Company
Insulated Gate Bi-Polar Transistor
Type T0900EA45A
Absolute Maximum Ratings
MAXIMUM
LIMITS
4500
VOLTAGE RATINGS
UNITS
VCES
VDC link
VGES
Collector – emitter voltage
Permanent DC voltage for 100 FIT failure rate.
Peak gate – emitter voltage
V
V
V
2800
±20
MAXIMUM
LIMITS
1212
RATINGS
UNITS
IC(DC)
ICRM
IF(DC)
IFRM
PMAX
(di/dt)cr
Tj
Continuous DC collector current, IGBT (Note 3)
Repetitive peak collector current, tp=1ms, IGBT
Continuous DC forward current, Diode (note 2 & 4)
Repetitive peak forward current, tp=1ms, Diode
Maximum power dissipation, IGBT (note 3)
Critical diode di/dt (note 4)
A
A
A
1500
1004
1500
7.1
2000
A
kW
A/µs
°C
°C
Operating temperature range.
Storage temperature range.
-40 to +125
-40 to +125
Tstg
Notes: -
1) Unless otherwise indicated Tj = 125ºC.
2) Tsink = 55°C, double side cooled.
3) Tsink = 25°C, double side cooled.
4) Maximum commutation loop inductance 1µH.
Data Sheet T0900EA45A Issue 4
Page 1 of 8
September, 2006
WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T0900EA45A
Characteristics
IGBT Characteristics
PARAMETER
UNITS
MIN TYP MAX TEST CONDITIONS
-
-
-
3.5
4.7
-
3.8
5.0
2.40
2.88
6.0
IC = 900A, VGE = 15V, Tj = 25°C
IC = 900A, VGE = 15V
V
V
V
mΩ
V
mA
µA
nF
µs
µs
VCE(sat) Collector – emitter saturation voltage
VT0
rT
Threshold voltage
Slope resistance
Current range: 300 – 900A
-
-
VGE(TH) Gate threshold voltage
4.0
5.6
20
-
150
1.6
2.3
VCE = VGE, IC = 200mA
VCE = VCES, VGE = 0V
ICES
IGES
Cies
td(on)
tr(I)
Collector – emitter cut-off current
35
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
-
-
-
-
±150 VGE = ±20V
-
-
-
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Turn-on gate charge
-
-
60
µC
IC =900A, VCE = 0.5VCES
,
VGE = ±15V,
Rg(ON)= 4Ω,
Rg(OFF)=2.5Ω,
Eon
td(off)
tf
Qg(off)
Eoff
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
-
-
-
-
-
2.8
1.2
1.2
-
-
-
J
µs
µs
µC
J
-
100
-
2.6
Diode Characteristics
PARAMETER
UNITS
MIN TYP MAX TEST CONDITIONS
-
-
-
-
-
-
-
3.1
3.6
-
3.4
3.9
1.63
2.19
-
IF = 900A, Tj =25°C
IF = 900A
V
V
V
mΩ
A
µC
µs
VF
Forward voltage
VTo
rT
Irm
Qrr
trr
Threshold voltage
Slope resistance
Peak reverse recovery current
Recovered charge
Reverse recovery time, 50% chord
Current range 300-900A
-
1800
800
0.71
-
-
IF = 900A, VGE = ±15V, di/dt=1500A/µs
Er
Reverse recovery energy
-
1.4
-
J
Thermal Characteristics
PARAMETER
UNITS
MIN TYP MAX TEST CONDITIONS
-
-
-
-
-
-
25
-
-
-
-
-
-
-
14
23
35
26
41
78
35
-
Double side cooled
Collector side cooled
Emitter side cooled
Double side cooled
Cathode side cooled
Anode side cooled
Note 2
K/kW
K/kW
K/kW
K/kW
K/kW
K/kW
kN
RthJK
Thermal resistance junction to sink, IGBT
Thermal resistance junction to sink, Diode
RthJK
F
Wt
Mounting force
Weight
30
1.2
kg
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) For other clamp forces, please consult factory
Data Sheet T0900EA45A Issue 4
Page 2 of 8
September, 2006
WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T0900EA45A
Curves
Figure 1 – Typical collector-emitter saturation voltage
characteristics
Figure 2 – Typical output characteristic
3000
10000
T0900EA45A
Issue 4
T0900EA45A
Issue 4
Tj =25°C
VGE=+15V
2500
25°C
125°C
2000
1000
100
10
VGE = 20V
VGE = 17V
VGE = 15V
VGE = 13V
1500
1000
500
0
1
3
5
7
0
2
4
6
8
10
12
Collector to emitter saturation voltage - VCE(SAT) (V)
Instantaneous forward voltage - VCE(sat) (V)
Figure 3 – Typical output characteristic
Figure 4 – Typical turn-on gate charge
3000
35
T0900EA45E
Issue 4
T0900EA45A
Issue 4
Tj =125°C
VCE=2800V
VGE=±15V
Tj=125°C
2500
30
25
20
15
10
2000
VGE = 20V
VGE = 17V
VGE = 15V
VGE = 13V
1500
1000
500
0
IC=900A
IC=500A
0
2
4
6
8
10
2
4
6
8
10
12
Collector to emitter saturation voltage - VCE(SAT) (V)
Gate resistance - RG(on) (Ω)
Data Sheet T0900EA45A Issue 4
Page 3 of 8
September, 2006
WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T0900EA45A
Figure 6 – Typical turn-on delay time vs gate
resistance
Figure 5 – Typical turn-off gate charge
60
3
T0900EA45A
Issue 4
T0900EA45A
Issue 4
VCE=2800V
VGE=±15V
Tj=125°C
VCE=2800V
VGE=±15V
Tj=125°C
IC=900A
50
40
30
20
IC=500A
2
IC=900A
IC=500A
1
2
3
4
5
6
7
2
4
6
8
10
12
Gate resistance - RG(off) (Ω)
Gate resistance - RG(on) (W)
Figure 7 – Typical turn-off delay time vs. gate
resistance
Figure 8 – Typical turn-on energy vs. collector current
2
3500
T0900EA45A
Issue 4
VCE=2800V
VGE=±15V
Tj=125°C
T0900EA45A
Issue 4
RG(on)=4
Ω
IC=900A
IC=500A
VGE=±15V
Tj=125°C
3000
2500
2000
1500
1000
500
VCE=2800V
VCE=2000V
VCE=1000V
1.5
1
0
2
3
4
5
6
7
200
400
600
800
1000
Gate resistance - RG(off) (Ω)
Collector current - IC (A)
Data Sheet T0900EA45A Issue 4
Page 4 of 8
September, 2006
WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T0900EA45A
Figure 10 – Typical turn-off energy vs. collector
current
Figure 9 – Typical turn-on energy vs. di/dt
3000
5000
T0900EA45A
Issue 4
T0900EA45A
Issue 4
VCE=2800V
RG(off)=2.5
Ω
VCE=2800V
VGE=±15V
Tj=125°C
V
GE=±15V
Tj=125°C
2500
2000
1500
1000
500
4000
3000
2000
1000
0
VCE=2000V
IC=900
VCE=1000V
IC=500A
0
200
400
600
800
1000
1000
1500
2000
2500
Collector current - IC (A)
Commutation rate - di/dt (A/µs)
Figure 11 – Turn-off energy vs voltage
Figure 12 – Safe operating area
3000
2000
T0900EA45A
Issue 4
T0900EA45A
Issue 4
VGE=±15V
Tj=125°C
IC=900A
IC=650A
Ω
RG(off)=2.5
GE=±15V
Tj=125°C
V
2500
2000
1500
1000
500
1500
1000
500
0
IC=350A
0
500
1000
1500
2000
2500
3000
0
1000
2000
3000
4000
5000
Collector-emitter voltage - VCE (V)
Gollector-emitter voltage - VCE (V)
Data Sheet T0900EA45A Issue 4
Page 5 of 8
September, 2006
WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T0900EA45A
Figure 13 – Typical diode forward characteristic
Figure 14 – Typical recovered charge
10000
1000
T0900EA45A
Issue 4
T0900EA45A
Issue 4
VGE=+15V
IF=900A
Tj=125°C
Tj=25°C
Tj=125°C
800
1000
100
10
600
Tj=25°C
400
200
0
800
1000
1200
1400
1600
1
2
3
4
5
6
7
Instantaneous forward voltage - VF (V)
Commutation rate - di/dt (A/µs)
Figure 15 – Typical reverse recovery current
Figure 16 – Typical reverse recovery time
2000
1.3
T0900EA45A
Issue 4
T0900EA45A
Issue 4
Tj=125°C
IF=900A
IF=900A
1500
1000
500
1.1
0.9
0.7
Tj=25°C
Tj=125°C
Tj=25°C
800
1000
1200
1400
1600
800
1000
1200
1400
1600
Commutation rate - di/dt (A/µs)
Commutation rate - di/dt (A/µs)
Data Sheet T0900EA45A Issue 4
Page 6 of 8
September, 2006
WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T0900EA45A
Figure 17 – Transient thermal impedance (IGBT)
0.1
T0900EA45A
Issue 4
Emitter
Collector
Double side
0.01
0.001
0.0001
0.00001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Time (s)
Figure 18 – Transient thermal impedance (Diode)
0.1
T0900EA45A
Issue 4
Emitter
Collector
Double Side
0.01
0.001
0.0001
0.00001
0.00001
0.0001
0.001
0.01
Time (s)
0.1
1
10
100
Data Sheet T0900EA45A Issue 4
Page 7 of 8
September, 2006
WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T0900EA45A
Outline Drawing & Ordering Information
101A340
ORDERING INFORMATION
(Please quote 10 digit code as below)
T0900
EA
45
A
Fixed type
Code
Fixed Outline
Code
Voltage Grade
4500
Fixed format code
Typical order code: T0900EA45A (VCES = 4500V)
IXYS Semiconductor GmbH
Edisonstraße 15
Westcode Semiconductors Ltd
Langley Park Way, Langley Park,
Chippenham, Wiltshire, SN15 1GE.
Tel: +44 (0)1249 444524
D-68623 Lampertheim
Tel: +49 6206 503-0
WESTCODE
Fax: +49 6206 503-627
E-mail: marcom@ixys.de
Fax: +44 (0)1249 659448
An IXYS Company
E-mail: WSL.sales@westcode,com
IXYS Corporation
Westcode Semiconductors Inc
3270 Cherry Avenue
3540 Bassett Street
www.westcode.com
www.ixys.com
Santa Clara CA 95054 USA
Tel: +1 (408) 982 0700
Fax: +1 (408) 496 0670
E-mail: sales@ixys.net
Long Beach CA 90807 USA
Tel: +1 (562) 595 6971
Fax: +1 (562) 595 8182
E-mail: WSI.sales@westcode.com
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.
© Westcode Semiconductors Ltd.
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to
the conditions and limits contained in this report.
Data Sheet T0900EA45A Issue 4
Page 8 of 8
September, 2006
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