T0900TA52E [IXYS]
Insulated Gate Bipolar Transistor, 1180A I(C), 5200V V(BR)CES, N-Channel, TA, 4 PIN;
| 型号： | T0900TA52E |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Insulated Gate Bipolar Transistor, 1180A I(C), 5200V V(BR)CES, N-Channel, TA, 4 PIN 栅 晶体管 |
| 文件： | 总7页 (文件大小：401K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Date:- 17 Jun, 2003
Data Sheet Issue:- 2
Provisional Data
Insulated Gate Bi-Polar Transistor
Type T0900TA52E
Absolute Maximum Ratings
MAXIMUM
LIMITS
VOLTAGE RATINGS
UNITS
VCES
Collector – emitter voltage
5200
2800
±20
V
V
V
VDC link
VGES
Permanent DC voltage for 100 FIT failure rate.
Peak gate – emitter voltage
MAXIMUM
LIMITS
RATINGS
UNITS
IC(DC)
ICRM
IECO
PMAX
Tj
Continuous DC collector current, IGBT (Note 2).
Repetitive peak collector current, tp=1ms, IGBT.
Maximum reverse emitter current, tp=1ms, (note 4).
Maximum power dissipation, IGBT (note 3).
Operating temperature range.
1180
A
kA
A
1.8
900
8.3
kW
°C
°C
-40 to +125
-40 to +125
Tstg
Storage temperature range.
Notes: -
1) Unless otherwise indicated Tj = 125ºC.
2) Tsink = 55°C, double side cooled.
3) Tsink = 25°C, double side cooled.
4) The Use of an anti-parallel diode is recommended.
Provisional Data Sheet T0900TA52E Issue 2
Page 1 of 7
June, 2003
WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T0900TA52E
Characteristics
IGBT Characteristics
UNITS
PARAMETER
MIN TYP MAX TEST CONDITIONS
-
-
-
-
3.2
4.2
-
3.6
4.6
2.1
2.4
IC = 900A, VGE = 15V, Tj = 25°C
IC = 900A, VGE = 15V
V
V
V
VCE(sat) Collector – emitter saturation voltage
VT0
rT
Threshold voltage
Slope resistance
Current range: 300 – 1100A
-
Ω
m
VGE(TH
)
Gate threshold voltage
5
5.8
7
VCE = VGE, IC = 200mA
VCE = VCES, VGE = 0V
V
ICES
IGES
Cies
td(on)
tr(I)
Collector – emitter cut-off current
Gate leakage current
Input capacitance
8
-
15
mA
µA
nF
µs
-
-
-
-
±200 VGE = ±20V
100
3.0
1.2
-
-
-
VCE = 25V, VGE = 0V, f = 1MHz
Turn-on delay time
Rise time
µs
IC =900A, VCE = 0.5VCES
,
Qg(on)
Turn-on gate charge
-
-
60
µC
VGE = ±20V,
Eon
td(off)
tf
Turn-on energy
Turn-off delay time
Fall time
-
-
-
-
-
2.1
2.6
2.5
-
-
J
µs
µs
µC
J
Ω,
Rg(ON)= 6
-
Ω,
Rg(OFF)=4
-
150
-
Cg=80nF (external capacitor across gate)
Qg(off)
Eoff
Turn-off gate charge
Turn-off energy
1.9
Thermal Characteristics
UNITS
PARAMETER
MIN TYP MAX TEST CONDITIONS
-
-
-
-
12
19
35
25
-
Double side cooled
Collector side cooled
Emitter side cooled
K/kW
K/kW
K/kW
kN
RthJK
Thermal resistance junction to sink, IGBT
-
-
F
Mounting force
Weight
15
-
20
1.2
Wt
kg
Notes:-
1) Unless otherwise indicated Tj=125°C.
Provisional Data Sheet T0900TA52E Issue 2
Page 2 of 7
June, 2003
WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T0900TA52E
Curves
Figure 1 – Typical collector-emitter saturation
voltage characteristics
Figure 2 – Typical output characteristic
1400
10000
T0900TA52E
AD Issue 2
T0900TA52E
AD Issue 2
Tj = 25°C
VGE=+15V
1200
VGE = 20V
V
V
V
GE = 18V
GE = 15V
GE = 13V
1000
800
600
400
200
0
Tj=25°C
Tj=125°C
1000
100
10
VGE = 12V
GE = 10V
V
0
2
4
6
8
0
2
4
6
Collector to emitter saturation voltage -VCE(SAT)(V)
Collector to emitter saturation voltage - VCE(sat) (V)
Figure 3 – Typical output characteristic
Figure 4 – Typical turn-on gate charge
1400
50
T0900TA52E
AD Issue 2
T0900TA52E
AD Issue 2
Tj = 125°C
VCE=2600V
VGE=±15V
Tj=125°C
1200
VGE = 20V
V
GE = 18V
40
VGE = 15V
VGE = 13V
VGE = 12V
VGE = 10V
IC=900A
1000
800
600
400
200
0
30
IC=500A
20
10
0
0
2
4
6
8
4
6
8
10
12
14
Collector to emitter saturation voltage -VCE(SAT)(V)
Gate resistance - RG(on) (Ω)
Provisional Data Sheet T0900TA52E Issue 2
Page 3 of 7
June, 2003
WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T0900TA52E
Figure 6 – Typical turn-on delay time vs gate
resistance
Figure 5 – Typical turn-off gate charge
140
5
T0900TA52E
AD Issue 2
T0900TA52E
AD Issue 2
VCE=2600V
VGE=±15V
Tj=125°C
VCE=2600V
VGE=±15V
Tj=125°C
IC=900A
130
IC=900A
IC=500A
120
4
IC=500A
110
100
90
3
80
70
2
2
3
4
5
6
7
8
5
7
9
11
13
15
Gate resistance - RG(off) (Ω)
Gate resistance - RG(on) (W)
Figure 7 – Typical turn-off delay time vs. gate Figure 8 – Typical turn-on energy vs. collector
resistance
current
5
2500
T0900TA52E
AD Issue 2
T0900TA52E
AD Issue 2
RG(on)=6Ω
VGE=±15V
Tj=125°C
VCE=2600V
VGE=±15V
Tj=125°C
IC=900A
IC=500A
VCE=2600V
2000
1500
1000
500
0
4
3
2
1
VCE=2000V
VCE=1000V
3
4
5
6
7
8
0
200
400
600
800
1000
1200
Gate resistance - RG(off) (Ω)
Collector current - IC (A)
Provisional Data Sheet T0900TA52E Issue 2
Page 4 of 7
June, 2003
WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T0900TA52E
Figure 10 – Typical turn-off energy vs. collector
current
Figure 9 – Typical turn-on energy vs. di/dt
2500
3500
T0900TA52E
AD Issue 2
T0900TA52E
AD Issue 2
RG(off)=4Ω
VCE=2600V
VGE=±15V
Tj=125°C
VGE=±15V
3000
2500
2000
1500
1000
500
IC=900A
Tj=125°C
2000
1500
1000
500
0
VCE=2600V
VCE=2000V
IC=500A
VCE=1000V
0
600
0
200
400
600
800
1000
1200
800
1000
1200
Collector current - IC (A)
Commutation rate - di/dt (A/µs)
Figure 11 – Turn-off energy vs voltage
Figure 12 – Safe operating area
2000
2000
T0900TA52E
AD Issue 2
T0900TA52E
AD Issue 2
IC=900A
VGE=±15V
Tj=125°C
1800
RG(off)=4Ω
V
GE=±15V
Tentative
Tj=125°C
1600
1400
1200
1000
800
600
400
200
0
1500
1000
500
0
IC=500A
IC=300A
500
1000
1500
2000
2500
3000
0
1000
2000
3000
4000
5000
6000
Collector-emitter voltage - VCE (V)
Gollector-emitter voltage - VCE (V)
Provisional Data Sheet T0900TA52E Issue 2
Page 5 of 7
June, 2003
WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T0900TA52E
Figure 13 – Transient thermal impedance (IGBT)
0.1
T0900TA52E
AD Issue 2
Emitter
Collector
0.01
0.001
Double side
0.0001
0.00001
0.00001
0.0001
0.001
0.01
Time (s)
0.1
1
10
100
Provisional Data Sheet T0900TA52E Issue 2
Page 6 of 7
June, 2003
WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T0900TA52E
Outline Drawing & Ordering Information
171A108
ORDERING INFORMATION
(Please quote 10 digit code as below)\
T0900
Fixed type
Code
TA
Fixed Outline
Code
52
E
Voltage Grade
5200V
Fixed format code
Typical order code: T0900TA52E (VCES = 5200V)
IXYS Semiconductor GmbH
Edisonstraße 15
D-68623 Lampertheim
Tel: +49 6206 503-0
Fax: +49 6206 503-627
E-mail: marcom@ixys.de
Westcode Semiconductors Ltd
Langley Park Way, Langley Park,
Chippenham, Wiltshire, SN15 1GE.
Tel: +44 (0)1249 444524
Fax: +44 (0)1249 659448
E-mail: WSL.sales@westcode,com
IXYS Corporation
3540 Bassett Street
Westcode Semiconductors Inc
3270 Cherry Avenue
www.westcode.com
www.ixys.net
Santa Clara CA 95054 USA
Tel: +1 (408) 982 0700
Fax: +1 (408) 496 0670
E-mail: sales@ixys.net
Long Beach CA 90807 USA
Tel: +1 (562) 595 6971
Fax: +1 (562) 595 8182
E-mail: WSI.sales@westcode.com
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.
Westcode Semiconductors Ltd.
©
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to
the conditions and limits contained in this report.
Provisional Data Sheet T0900TA52E Issue 2
Page 7 of 7
June, 2003
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