T0905 [ATMEL]
General- purpose VHF/UHF Power Amplifier (135 to 600 MHz); 通用VHF / UHF功率放大器（ 135至600兆赫）
| 型号： | T0905 |
| 厂家： | 
ATMEL |
| 描述： | General- purpose VHF/UHF Power Amplifier (135 to 600 MHz) |
| 文件： | 总9页 (文件大小：220K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Features
• 35 dBm Output Power in CW Mode
• High Power Added Efficiency (PAE)
• Single Supply Operation (No Negative Rail)
• Simple Analog Power Ramp Control
• Low Current Consumption in Power-down Mode (Typically ≤15 µA)
• Small SMD Package (PSSOP28 with Heat Slug)
Applications
• Professional Phones
• Hands-free Sets
• ISM Band Application
• Wireless Infrastructure Preamplifiers
General-
purpose
VHF/UHF Power
Amplifier
(135 to 600 MHz)
Description
The T0905 is a monolithic integrated power amplifier IC manufactured with Atmel’s
Silicon-Germanium (SiGe) process. Due to its open architecture, the device can be
used either as a two or three-stage amplifier. Every stage can be matched individu-
ally, thus allowing applications in a wide frequency range. The T0905 can be used
from 135 MHz up to 600 MHz in both linear and non-linear (saturated) mode. The
power gain can be set dynamically by means of an analog control input optionally for
each single stage or for the entire power amplifier. Constant gain mode is also possi-
ble. The T0905 is suited for CW mode up to 35 dBm. These features, including wide
power ramp control, make the T0905 a very flexible power amplifier for many different
applications.
T0905
Preliminary
Apart from telephone applications, the T0905 can also be used for car identification
systems and several other wireless communication systems. The single supply volt-
age operation at +3.5 V and a negligible leakage current in power-down mode enable
a remarkable simplification of the application’s power management.
Figure 1. Block Diagram
GAIN3
18
VCTL1
13
GAIN1 VCTL2 GAIN2
VCTL3
15
16
17
14
19
Buf2
Buf3
Buf1
VBIAS3
VBIAS2
11
12
BGOUT
VCTL
9
8
BG
10
7
VB2_DC
VCC_CTL
20
VB3_DC
22-25
RF1
RF2
RF3
Match
Match
Match
RFOUT/VCC3
RFIN1
21
GND3
4
3
28
6
5
27
26
GND1 VCC1
GND2 VCC2
RFIN2
GND3
VB3
Rev. 4751D–SIGE–05/04
Pin Configuration
Figure 2. Pinning PSSOP28
NC
GND2
1
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC2
2
VB3
GND2
3
GND3
RFin2
4
RFOUT/VCC3
RFOUT/VCC3
RFOUT/VCC3
RFOUT/VCC3
GND3
VCC1
5
GND1
6
RFIN1
7
VB2_DC
VBIAS2
VCC_CTL
BGOUT
VCTL
8
9
VB3_DC
VBIAS3
10
11
12
13
14
GAIN3
GAIN2
VCTL1
VCTL2
GAIN1
VCTL3
Pin Description
Pin
Symbol
Function
1
NC
Not connected
Ground
2
GND2
3
GND2
Ground
4
RFIN2
VCC1
RF input (2-stage operation)
Supply voltage, first stage
Ground
5
6
GND1
7
RFIN1
VB2_DC
VBIAS2
VCC_CTL
BGOUT
VCTL
RF input (3-stage operation)
8
Input for gain setting, second stage
Output Buf2
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Supply voltage control block
Output band gap
Control voltage input
Control voltage input, first stage
Control voltage input, second stage
Control voltage input, third stage
Gain setting Buf1
VCTL1
VCTL2
VCTL3
GAIN1
GAIN2
GAIN3
VBIAS3
VB3_DC
GND3
Gain setting Buf2
Gain setting Buf3
Output Buf3
Input for gain setting, third stage
Ground
RFOUT/VCC3 RF output/supply voltage, third stage
RFOUT/VCC3 RF output/supply voltage, third stage
RFOUT/VCC3 RF output/supply voltage, third stage
2
T0905 [Preliminary]
4751D–SIGE–05/04
T0905 [Preliminary]
Pin Description (Continued)
Pin
25
26
27
28
Symbol
Function
RFOUT/VCC3 RF output/supply voltage, third stage
GND3
VB3
Ground
Pin to extend the input capacity of stage 3
Supply voltage second stage
VCC2
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameters
Symbol
Value
0 to +5.5
10
Unit
V
Supply voltage VCC, no RF
VCC1, VCC2, VCC3
Input power
PRFin
Vctl
dBm
V
Gain control voltage(1)
Operating case temperature
Storage temperature
Maximum output power
0 to +2.5
-40 to 100
-40 to +150
36
Tc
°C
Tstg
°C
PRFout
dBm
Note:
1. The part may not survive all maximums applied simultaneously
Thermal Resistance
Parameters
Symbol
Value
Unit
Junction case
RthJC
19
K/W
Operating Range
All voltages are referred to GND
Parameters
Symbol
VCC
Value
Unit
V
Supply voltage
2.7 to 5.0
-40 to +85
135 to 600
Ambient temperature
Input frequency
Tamb
°C
fRfin
MHz
3
4751D–SIGE–05/04
Electrical Characteristics
Test conditions (if not otherwise specified): VCC = +3.5 V, Tamb = +25°C, 50 Ω input and 50 Ω output match
No.
1
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
Power Supply
Current consumption
power down mode
(leakage current)
10, 22 -
25, 28
1.1
Vctlx ≤0.2 V
I
15
25
µA
A
2
150-MHz Amplifier Mode
2.1
Frequency range
fRfin150
135
178
MHz
dBm
C
C
VCC = 3.5 V
amb = +25°C
PRFin = 3 dBm
Output power
normal conditions
T
2.2
2.3
22 - 25
PRFout150
34.0
35.0
33.0
RL = RG = 50 Ω
VCC = 2.4 V
Tamb = +85°C
Extreme conditions
Input power
22 - 25
4
PRFout150
32.0
50
dBm
C
PRFin = 3 dBm
RL = RG = 50 Ω
2.4
2.5
PRFin150
PAE150
3
10
dBm
%
C
C
Power added
efficiency
VCC = 3.5 V
10, 22 -
25, 28
55
PRFout = 35.0 dBm
Current consumption
active mode
10, 22 -
25, 28
2.6
2.7
PRFout = 35 dBm
I150
1.64
A
C
C
C
C
C
C
PRFin = 0 to 8 dBm
PRFout = 31.0 dBm
Input VSWR
4
VSWR150
VSWR150
2fo150
2:1
8:1
-35
-35
-35
Stability/load
mismatch
2nd harmonic
distortion
3rd harmonic
distortion
4th to 8th harmonic
distortion
PRFout = 31.0 dBm
VCC = 4.6 V
2.8
22 - 25
22 - 25
22 - 25
22 - 25
2.9
dBc
dBc
dBc
2.10
2.11
3fo150
4fo..8fo150
PRfin150 = 8 dBm
Isolation between
input and output
4,
22 - 25
2.12
Vctl ≤0.2 V
PRFout150
-30
dBm
C
(power down)
3
450-MHz Amplifier Mode
3.1
Frequency range
V
Output power
fRfin450
380
520
MHz
dBm
A
A
CC = 3.5 V
Tamb = +25°C
RFin = 3 dBm
RL = RG = 50 Ω
3.2
22 - 25
PRFout450
34.0
35.0
normal conditions
P
V
CC = 2.4 V
Tamb = +85°C
RFin = 3 dBm
RL = RG = 50 Ω
3.3
3.4
Extreme conditions
Input power
22 - 25
4
PRFout450
32.0
33.0
3
dBm
dBm
C
A
P
PRFin450
10
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
4
T0905 [Preliminary]
4751D–SIGE–05/04
T0905 [Preliminary]
Electrical Characteristics (Continued)
Test conditions (if not otherwise specified): VCC = +3.5 V, Tamb = +25°C, 50 Ω input and 50 Ω output match
No.
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
Power added
efficiency
VCC = 3.5 V
PRFout = 35.0 dBm
10, 22 -
25, 28
3.5
PAE450
50
55
%
A
Current consumption
active mode
P
RFout = 35 dBm
10, 22 -
25, 28
3.6
3.7
I450
1.64
A
A
C
C
A
A
C
PAE = 55%
PRfin450 = 0 to 8 dBm
Input VSWR
4
VSWR450
VSWR450
2fo450
2:1
8:1
-35
-35
-35
PRFout = 31.0 dBm
Stability/load
mismatch
2nd harmonic
distortion
PRFout450 = 31.0 dBm
VCC = 4.6 V
3.8
22 - 25
22 - 25
22 - 25
22 - 25
3.9
dBc
dBc
dBc
3rd harmonic
distortion
4th to 8th harmonic
distortion
3.10
3.11
3fo450
4fo..8fo450
PRfin150 = 8 dBm
Isolation between
input and output
4,
22 - 25
3.12
Vctl ≤0.2 V
PRFout450
-30
dBm
A
(power down)
4
Power Control
P
P
RFout ≥ 5 dBm
RFout ≥ 25 dBm
300
120
350
150
dB/V
dB/V
4.1
Control curve slope
22 - 25
Sctl
C
4.2
4.3
Power control range
Control voltage range
Vctl = 0 to 2.5 V
22 - 25
12 - 14
Gctl
Vctl
60
dB
V
C
C
0.5
2.0
PRFin = 0 to 8 dBm
Vctl = 0 to 2.0 V
4.4
Control current
12 - 14
Ictll
200
µA
A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
5
4751D–SIGE–05/04
Figure 3. Application Example for 450-MHz PA with Variable Gain
VCTL
R3
R7
R11
VCTL1
13
GAIN2 VCTL3
GAIN3
18
GAIN1
VCTL2
14
16
15
17
19
9
VBIAS3
VBIAS2
Buf1
Buf2
Buf3
R14
BGOUT
C4
11
12
VCTL
L2
C2
C5
BG
L1
C1
8
20
VB2_DC
VB3_DC
MS3
VCC_CTL 10
VCC_CTL
RFIN
C18
C3
C8
L13
L8
L9
22-25
MS4
MS5
RFIN1
7
Match
4
RF3
Match
RF1
6
RF2
3
Match
RFOUT/
VCC3
RFOUT
L4
L3
C20
C21
C7
C19
28
27
VB3
26
21
GND3
5
C24
R13
GND2
VCC1
RFin2
GND1
VCC2
MS6
GND3
MS
L5
1
MS7
C28
C26
C27
Micro strip lines
length/mm width/mm
MS8
R15
MS
2
MS9
L7
MS1
MS2
MS3
MS4
MS5
MS6
MS7
MS8
MS9
2.5
2
2.5
5
4
3
2
2
4
1
1
C14
1.6
0.43
0.43
0.63
0.3
0.3
0.63
C17
C15
C11
C9
L11
L10
C12
C13
C10
C16
Board material:
Epsilon(r): 4.3; metal Cu: 35 µm;
distance 1. layer - RF ground: 240 µm
VCC1
VCC2
VCC3
6
T0905 [Preliminary]
4751D–SIGE–05/04
T0905 [Preliminary]
Figure 4. Recommended Package Footprint Extract from the PCB Showing a Part of
the Core Application (Without Components)
•
•
Only ground signal traces are recommended directly under the package.
Maximum density of ground vias guarantees an optimum connection of the ground
layers and the best diversion of the heat.
•
•
Heat slug must be soldered to GND.
Plugging of the ground vias under the heat slug is recommended to avoid soldering
problems.
7
4751D–SIGE–05/04
Ordering Information
Extended Type Number
Package
Remarks
T0905-TSPH
PSSOP28
Lead-free
Package Information
Package PSSOP28
Dimensions in mm
9.98
9.80
6.02
3.91
1.60
1.45
0.2
0.25
0.10
0.00
0.64
8.32
28
15
2.21
1.80
technical drawings
according to DIN
specifications
1
14
7.29
6.88
8
T0905 [Preliminary]
4751D–SIGE–05/04
Atmel Corporation
Atmel Operations
2325 Orchard Parkway
San Jose, CA 95131, USA
Tel: 1(408) 441-0311
Fax: 1(408) 487-2600
Memory
RF/Automotive
Theresienstrasse 2
Postfach 3535
74025 Heilbronn, Germany
Tel: (49) 71-31-67-0
Fax: (49) 71-31-67-2340
2325 Orchard Parkway
San Jose, CA 95131, USA
Tel: 1(408) 441-0311
Fax: 1(408) 436-4314
Regional Headquarters
Microcontrollers
2325 Orchard Parkway
San Jose, CA 95131, USA
Tel: 1(408) 441-0311
Fax: 1(408) 436-4314
1150 East Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906, USA
Tel: 1(719) 576-3300
Europe
Atmel Sarl
Route des Arsenaux 41
Case Postale 80
CH-1705 Fribourg
Switzerland
Tel: (41) 26-426-5555
Fax: (41) 26-426-5500
Fax: 1(719) 540-1759
Biometrics/Imaging/Hi-Rel MPU/
High Speed Converters/RF Datacom
Avenue de Rochepleine
La Chantrerie
BP 70602
44306 Nantes Cedex 3, France
Tel: (33) 2-40-18-18-18
Fax: (33) 2-40-18-19-60
BP 123
38521 Saint-Egreve Cedex, France
Tel: (33) 4-76-58-30-00
Fax: (33) 4-76-58-34-80
Asia
Room 1219
Chinachem Golden Plaza
77 Mody Road Tsimshatsui
East Kowloon
Hong Kong
Tel: (852) 2721-9778
Fax: (852) 2722-1369
ASIC/ASSP/Smart Cards
Zone Industrielle
13106 Rousset Cedex, France
Tel: (33) 4-42-53-60-00
Fax: (33) 4-42-53-60-01
1150 East Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906, USA
Tel: 1(719) 576-3300
Japan
9F, Tonetsu Shinkawa Bldg.
1-24-8 Shinkawa
Chuo-ku, Tokyo 104-0033
Japan
Tel: (81) 3-3523-3551
Fax: (81) 3-3523-7581
Fax: 1(719) 540-1759
Scottish Enterprise Technology Park
Maxwell Building
East Kilbride G75 0QR, Scotland
Tel: (44) 1355-803-000
Fax: (44) 1355-242-743
Literature Requests
www.atmel.com/literature
Disclaimer: Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standard
warranty which is detailed in Atmel’s Terms and Conditions located on the Company’s web site. The Company assumes no responsibility for any
errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and
does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are
granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel’s products are not authorized for use
as critical components in life support devices or systems.
© Atmel Corporation 2004. All rights reserved.
Atmel® and combinations thereof are the registered trademarks of Atmel Corporation or its subsidiaries.
Other terms and product names may be the trademarks of others.
Printed on recycled paper.
4751D–SIGE–05/04
相关型号：
T0952-6BQ
Narrow Band Low Power Amplifier, 1800MHz Min, 2000MHz Max, 1 Func, BIPolar, PLASTIC, TSSOP-8
ATMEL
©2020 ICPDF网 联系我们和版权申明