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T0900EB45A [IXYS]

Insulated Gate Bipolar Transistor, 900A I(C), 4500V V(BR)CES, N-Channel,;
T0900EB45A
型号： T0900EB45A
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

Insulated Gate Bipolar Transistor, 900A I(C), 4500V V(BR)CES, N-Channel,

栅 晶体管
文件： 总8页 (文件大小：409K)
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Date:- 30 Oct, 2008  
Data Sheet Issue:- 1  
WESTCODE  
An IXYS Company  
Provisional Data  
Insulated Gate Bi-Polar Transistor  
Type T0900EB45A  
Absolute Maximum Ratings  
MAXIMUM  
LIMITS  
4500  
VOLTAGE RATINGS  
UNITS  
VCES  
VDC link  
VGES  
Collector – emitter voltage  
Permanent DC voltage for 100 FIT failure rate.  
Peak gate – emitter voltage  
V
V
V
2800  
±20  
MAXIMUM  
LIMITS  
900  
RATINGS  
UNITS  
IC(DC)  
ICRM  
IF(DC)  
IFRM  
IFSM  
IFSM2  
PMAX  
(di/dt)cr  
Tj  
Continuous DC collector current, IGBT  
Repetitive peak collector current, tp=1ms, IGBT  
Continuous DC forward current, Diode  
Repetitive peak forward current, tp=1ms, Diode  
Peak non-repetitive surge tp=10ms, VRM=60%VRRM, Diode (Note 4)  
Peak non-repetitive surge tp=10ms, VRM≤10V, Diode (Note 4)  
Maximum power dissipation, IGBT (Note 2)  
Critical diode di/dt (note 3)  
A
A
A
1800  
900  
1800  
14.2  
15.6  
A
kA  
kA  
kW  
A/µs  
°C  
°C  
7.1  
2500  
Operating temperature range.  
Storage temperature range.  
-40 to +125  
-40 to +125  
Tstg  
Notes: -  
1) Unless otherwise indicated Tj = 125ºC.  
2) Tsink = 25°C, double side cooled.  
3) Maximum commutation loop inductance 250nH.  
4) Half-sinewave, 125°C Tj initial.  
Provisional Data Sheet T0900EB45A Issue 1  
Page 1 of 8  
October, 2008  
WESTCODE An IXYS Company  
Insulated Gate Bi-polar Transistor Type T0900EB45A  
Characteristics  
IGBT Characteristics  
UNITS  
PARAMETER  
MIN TYP MAX TEST CONDITIONS  
-
-
-
-
-
3.05  
3.80  
-
3.40 IC = 900A, VGE = 15V, Tj = 25°C  
4.20 IC = 900A, VGE = 15V  
V
V
V
mΩ  
V
mA  
µA  
nF  
µs  
µs  
µC  
J
µs  
µs  
µC  
J
VCE(sat) Collector – emitter saturation voltage  
VT0  
rT  
Threshold voltage  
Slope resistance  
1.73  
2.68  
Current range: 400 – 1200A  
-
VGE(TH) Gate threshold voltage  
5.3  
10  
-
150  
2.2  
3.4  
5
4.3  
1.9  
2.4  
10  
3.6  
2.4  
3.2  
5
3.8  
1.9  
2.4  
10  
3.6  
-
30  
±10  
VCE = VGE, IC = 90mA  
VCE = VCES, VGE = 0V  
VGE = ±20V  
ICES  
IGES  
Cies  
td(on)  
tr(I)  
Collector – emitter cut-off current  
Gate leakage current  
Input capacitance  
Turn-on delay time  
Rise time  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
VCE = 25V, VGE = 0V, f = 1MHz  
IC =900A, VCE =2800V,  
VGE = ±15V, Ls=250nH  
Rg(ON)= 6.6Ω, Rg(OFF)=5.0Ω, CGE=100nF  
Integral diode used as freewheel diode  
(Note 3 )  
Qg(on)  
Eon  
td(off)  
tf  
Turn-on gate charge  
Turn-on energy  
Turn-off delay time  
Fall time  
Qg(off)  
Eoff  
Turn-off gate charge  
Turn-off energy  
Turn-on delay time  
Rise time  
td(on)  
tr(I)  
µs  
µs  
µC  
J
µs  
µs  
µC  
J
IC =900A, VCE = 2800V,  
VGE = ±15V, Ls=250nH  
Rg(ON)= 6.6Ω, Rg(OFF)=5.0Ω, CGE=100nF  
Free wheel diode type E900NC450  
(Note 3 )  
Qg(on)  
Eon  
td(off)  
tf  
Turn-on gate charge  
Turn-on energy  
Turn-off delay time  
Fall time  
Qg(off)  
Eoff  
Turn-off gate charge  
Turn-off energy  
V
GE=+15V, VCC=2800V, VCEmax≤VCES  
,
ISC  
Short circuit current  
-
3400  
-
A
tp≤10µs  
Diode Characteristics  
UNITS  
PARAMETER  
MIN TYP MAX TEST CONDITIONS  
-
-
-
-
-
-
-
3.4  
3.9  
-
3.7  
4.2  
2.43  
1.86  
-
IF = 900A, Tj =25°C  
IF = 900A  
V
V
V
mΩ  
A
µC  
µs  
VF  
Forward voltage  
VTo  
rT  
Irm  
Qrr  
trr  
Threshold voltage  
Slope resistance  
Peak reverse recovery current  
Recovered charge  
Reverse recovery time, 50% chord  
Current range 400-1200A  
-
610  
920  
2.3  
-
-
IF = 900A, VGE = ±15V, di/dt=2000A/µs  
Er  
Reverse recovery energy  
-
0.9  
-
J
Provisional Data Sheet T0900EB45A Issue 1  
Page 2 of 8  
October, 2008  
WESTCODE An IXYS Company  
Insulated Gate Bi-polar Transistor Type T0900EB45A  
Thermal Characteristics  
UNITS  
PARAMETER  
MIN TYP MAX TEST CONDITIONS  
-
-
-
-
-
-
25  
-
-
-
-
-
-
-
-
14  
23  
35  
26  
41  
78  
35  
-
Double side cooled  
Collector side cooled  
Emitter side cooled  
Double side cooled  
Cathode side cooled  
Anode side cooled  
Note 2  
K/kW  
K/kW  
K/kW  
K/kW  
K/kW  
K/kW  
kN  
RthJK  
Thermal resistance junction to sink, IGBT  
Thermal resistance junction to sink, Diode  
RthJK  
F
Wt  
Mounting force  
Weight  
1.2  
kg  
Notes:-  
1) Unless otherwise indicated Tj=125°C.  
2) Consult application note 2008AN01 for detailed mounting requirements  
3) CGE is additional gate – emitter capacitance added to output of gate drive  
Provisional Data Sheet T0900EB45A Issue 1  
Page 3 of 8  
October, 2008  
WESTCODE An IXYS Company  
Insulated Gate Bi-polar Transistor Type T0900EB45A  
Curves  
Figure 1 – Typical collector-emitter saturation voltage  
characteristics  
Figure 2 – Typical output characteristic  
2000  
10000  
T0900EB45A  
T0900EB45A  
AD Issue 1  
VGE=+15V  
AD Issue 1  
Tj =25°C  
25°C  
125°C  
1500  
1000  
100  
10  
1000  
500  
0
VGE = 20V  
VGE = 17V  
VGE = 15V  
VGE = 13V  
VGE = 11V  
0
1
2
3
4
5
6
7
0
2
4
6
8
10  
Collector to emitter saturation voltage - VCE(sat) (V)  
Instantaneous forward voltage - VCE(sat) (V)  
Figure 4 – Typical turn-on delay time vs gate  
resistance  
Figure 3 – Typical output characteristic  
2000  
6
T0900EB45A  
T0900EB45A  
AD Issue 1  
AD Issue 1  
IC=900A  
IC=500A  
VCE=2800V  
Tj =125°C  
VGE=±15V  
CGE=100nF  
Tj=125°C  
1500  
5
4
3
2
VGE = 20V  
VGE = 17V  
VGE = 15V  
VGE = 13V  
VGE = 11V  
1000  
500  
0
0
1
2
3
4
5
6
7
4
6
8
10  
12  
14  
16  
18  
Collector to emitter saturation voltage - VCE(sat) (V)  
Gate resistance - RG(on) (Ω)  
Provisional Data Sheet T0900EB45A Issue 1  
Page 4 of 8  
October, 2008  
WESTCODE An IXYS Company  
Insulated Gate Bi-polar Transistor Type T0900EB45A  
Figure 5 – Typical turn-off delay time vs. gate  
resistance  
Figure 6 – Typical turn-on energy vs. collector current  
4
5000  
T0900EB45A  
T0900EB45A  
AD Issue 1  
VCE=2800V  
IC=900A  
AD Issue 1  
RG(on)=6.6Ω  
VCE=2800V  
CGE=100nF  
V
GE=±15V  
GE=100nF  
Tj=125°C  
C
V
GE=±15V  
Tj=125°C  
IC=500A  
3.5  
3
4000  
3000  
2000  
1000  
0
VCE=2000V  
VCE=1000V  
2.5  
2
1.5  
4
6
8
10  
12  
14  
16  
200  
400  
600  
800  
1000  
Gate resistance - RG(off) (Ω)  
Collector current - IC (A)  
Figure 7 – Typical turn-on energy vs. di/dt  
Figure 8 – Typical turn-off energy vs. collector current  
4000  
7000  
T0900EB45A  
T0900EB45A  
AD Issue 1  
VCE=2800V  
VGE=±15V  
Tj=125°C  
AD Issue 1  
VCE=2800V  
RG(off)=5Ω  
CGE=100nF  
3500  
V
GE=±15V  
6000  
5000  
4000  
3000  
2000  
1000  
0
Tj=125°C  
3000  
2500  
2000  
1500  
1000  
500  
VCE=2000V  
IC=900A  
VCE=1000V  
IC=500A  
0
200  
400  
600  
800  
1000  
0
1000  
2000  
3000  
Collector current - IC (A)  
Commutation rate - di/dt (A/µs)  
Provisional Data Sheet T0900EB45A Issue 1  
Page 5 of 8  
October, 2008  
WESTCODE An IXYS Company  
Insulated Gate Bi-polar Transistor Type T0900EB45A  
Figure 9 – Turn-off energy vs voltage  
Figure 10 – Safe operating area  
4000  
2500  
2000  
1500  
1000  
500  
T0900EB45A  
T0900EA45A  
AD Issue 1  
AD Issue 1  
IC=900A  
VGE=±15V  
Maximum LS=250nH  
Tj=125°C  
RG(off)=5Ω  
CGE=100nF  
3500  
3000  
2500  
2000  
1500  
1000  
500  
V
GE=±15V  
Tj=125°C  
IC=500A  
IC=500A  
IC=300A  
0
0
500  
0
1000  
2000  
3000  
4000  
5000  
1000  
1500  
2000  
2500  
3000  
Gollector-emitter voltage - VCE (V)  
Collector-emitter voltage - VCE (V)  
Figure 11 – Typical diode forward characteristic  
Figure 12 – Typical recovered charge  
10000  
1100  
T0900EB45A  
T0900EB45A  
Issue 1  
AD Issue 1  
IF=900A  
Tj=125°C  
Tj=25°C  
900  
700  
500  
300  
Tj=125°C  
1000  
100  
10  
Tj=25°C  
500  
1000  
1500  
2000  
2500  
0
2
4
6
Instantaneous forward voltage - VF (V)  
Commutation rate - di/dt (A/µs)  
Provisional Data Sheet T0900EB45A Issue 1  
Page 6 of 8  
October, 2008  
WESTCODE An IXYS Company  
Insulated Gate Bi-polar Transistor Type T0900EB45A  
Figure 13 – Typical reverse recovery current  
Figure 14 – Typical reverse recovery time  
700  
4
T0900EB45A  
T0900EB45A  
AD Issue 1  
IF=900A  
AD Issue 1  
Tj=125°C  
IF=900A  
600  
500  
400  
300  
200  
3.5  
3
Tj=25°C  
2.5  
Tj=125°C  
2
Tj=25°C  
1.5  
0
500  
1000  
1500  
2000  
2500  
3000  
0
500  
1000  
1500  
2000  
2500  
3000  
Commutation rate - di/dt (A/µs)  
Commutation rate - di/dt (A/µs)  
Figure 15 – Transient thermal impedance (IGBT)  
Figure 16 – Transient thermal impedance (Diode)  
0.1  
0.1  
T0900EB45A  
Anode  
Cathode  
T0900EB45A  
AD Issue 1  
Emitter  
Collector  
Issue 1  
Double Side  
Double Side  
0.01  
0.01  
0.001  
0.001  
0.0001  
0.0001  
0.00001  
0.00001  
1E-05 0.0001 0.001 0.01  
0.1  
1
10  
100  
1E-05 0.0001 0.001 0.01  
0.1  
1
10  
100  
Time (s)  
Time (s)  
Provisional Data Sheet T0900EB45A Issue 1  
Page 7 of 8  
October, 2008  
WESTCODE An IXYS Company  
Insulated Gate Bi-polar Transistor Type T0900EB45A  
Outline Drawing & Ordering Information  
101A340  
ORDERING INFORMATION  
(Please quote 10 digit code as below)  
T0900  
EB  
45  
A
Fixed type  
Code  
Fixed Outline  
Code  
Voltage Grade  
4500  
Fixed format code  
Typical order code: T0900EB45A (VCES = 4500V)  
IXYS Semiconductor GmbH  
Edisonstraße 15  
Westcode Semiconductors Ltd  
Langley Park Way, Langley Park,  
Chippenham, Wiltshire, SN15 1GE.  
Tel: +44 (0)1249 444524  
D-68623 Lampertheim  
Tel: +49 6206 503-0  
WESTCODE  
Fax: +49 6206 503-627  
E-mail: marcom@ixys.de  
Fax: +44 (0)1249 659448  
An IXYS Company  
E-mail: WSL.sales@westcode.com  
IXYS Corporation  
IXYS Long Beach  
IXYS Long Beach, Inc  
1590 Buckeye Drive  
Milpitas CA 95035-7418  
Tel: +1 (408) 457 9000  
Fax: +1 (408) 496 0670  
E-mail: sales@ixys.net  
www.westcode.com  
www.ixys.net  
2500 Mira Mar Ave, Long Beach  
CA 90815  
Tel: +1 (562) 296 6584  
Fax: +1 (562) 296 6585  
E-mail: service@ixyslongbeach.com  
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed  
except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.  
© Westcode Semiconductors Ltd.  
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.  
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to  
the conditions and limits contained in this report.  
Provisional Data Sheet T0900EB45A Issue 1  
Page 8 of 8  
October, 2008  

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