MMA-021015 [IXYS]
Wide Band Low Power Amplifier, 2000MHz Min, 10000MHz Max, 1 X 0.90 MM, 0.10 MM HEIGHT, DIE;
| 型号： | MMA-021015 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Wide Band Low Power Amplifier, 2000MHz Min, 10000MHz Max, 1 X 0.90 MM, 0.10 MM HEIGHT, DIE 射频 微波 |
| 文件： | 总3页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMA-021015
2 - 10 GHz GaAs MMIC Medium Power Amp
Data Sheet
June 2007
Features:
•
•
•
•
•
•
•
•
Single Bias +6V with 80mA Operation Current
Fully Matched Input/Output
On-Chip Input/Output DC Blocking
On-Chip DC Bias RF Choke and Bypass
Gain: 15dB
P1dB: 16dBm
Small Size: 1.0 x 0.9 x 0.1 mm
Reliable PHEMT Technology
Description:
The MMA-021015 is a 2 - 10GHz broadband medium power amplifier realized in advanced GaAs PHEMT
technology. With on-chip input/output blocking capacitors and DC supply RF choke circuitry, it requires only three
bonds for DC bias and RF-connections. It is unconditionally stable and directly cascadable with other stages. The
MMA-021015 can be DC and RF tested and screened on-wafer to insure the performance.
Electrical Specifications: (Vds=6.0V, TA=25 °C)
SYMBOL
Units
GHz
dB
MIN
TYP
MAX
10.0
Frequency
2.0
Small Signal Gain
Gain Flatness
18
2.5
-12
-15
+17
+/-dB
dB
dB
Input Return Loss
Output Return Loss
Output P1dB
dBm
2nd and 3rd Harmonic
(2-5GHz, at Po-1)
Reverse Isolation
Noise Figure
dBc
-23
dB
dB
30
4.8
-89
92
DC Current, quiescent
Current at Psat
Thermal Resistance
mA
mA
°C/W
105
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2007
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Page 1 of 3, Updated June 2007
MMA-021015
2 - 10 GHz GaAs MMIC Medium Power Amp
Data Sheet
June 2007
Absolute Maximum Ratings:
Parameter
Rating
+8 V
Positive Supply Voltage
Current
150 mA
+175oC
-65 oC to +175oC
Channel Temperature
Storage Temperature
Input Power
+15 dBm
Measured Data:
SSG and VSWR
Vdd = +6V, 78mA quiescent current
SSG, @+25 degC, dB
30
20
10
0
SSG, @+95 degC, dB
SSG,
@-55 degC, dB
-10
-20
-30
VSWR, In, @+25 degC, dB
VSWR, out, @+25 degC, dB
0
5
10
15
Freq (GHz)
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2007
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Page 2 of 3, Updated June 2007
MMA-021015
2 - 10 GHz GaAs MMIC Medium Power Amp
Data Sheet
June 2007
Pout and NF @ +25oC
Vdd = +6V, 78mA quiescent current
Po-1, dBm
25
20
15
10
5
Psat, dBm
NF, dB
0
0
5
10
15
Freq (GHz)
Bonding/Assembly Diagram:
Notes:
1. The MMA-021015 chip size is 1.0mm x 0.9mm.
2. Use 0.7-mil dia Au wire. The input/output bond pad sizes are: 3.54 mil x 4.7mil. The VDD DC bond
pad size is: 3.54 mil x 6 mil. Two bond wires at VDD are recommended but one bond wire is
acceptable.
3. The lower-right corner on-chip bond wire is removed.
4. Only one external component, a 750pF cap, is used. (C1)
5. Current product is in MMIC chip form.
6. If customer is interested in a packaged part, a QFN 3X3 type packaged part is possible. Please
contact MwT sales for more information.
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2007
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Page 3 of 3, Updated June 2007
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