MMA-022025B [IXYS]
Wide Band Medium Power Amplifier, 2000MHz Min, 20000MHz Max, 2.85 X 1.24 MM, 0.10 MM HEIGHT, DIE;
| 型号： | MMA-022025B |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Wide Band Medium Power Amplifier, 2000MHz Min, 20000MHz Max, 2.85 X 1.24 MM, 0.10 MM HEIGHT, DIE 射频 微波 |
| 文件： | 总4页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMA-022025B
2 - 20 GHz GaAs MMIC
Power Amplifier
Data Sheet
March 2007
Features:
•
•
•
•
•
•
•
•
•
Usable Frequency Range: 1 - 22 GHz
P1dB: +27 dBm
Gain: 7.5 dB
Fully Matched Input/Output
On-Chip DC Bias RF Choke
On-Chip Input/Output DC Blocking
Die Size: 2.85 x 1.24 x 0.1 mm
Robust 0.25um pHEMT Technology
MTTF > 1.0E6 hours @ +85 °C Ambient
Description:
The MMA-022025B is a 2 - 20GHz broadband amplifier with typical 27dBm output power at 1 dB compression point. The
MMIC chip is realized in advanced 0.25um AlGaAs/InGaAs pHEMT technology. The usable frequency range extends to 1
– 22 GHz. With on-chip input/output blocking capacitors and DC supply RF choke circuitry, it only requires simple DC bias
circuits and RF connections for broad range applications.
Electrical Specifications: (At VDD = + 8.0V, IDD = 290 mA, VGG = - 0.40V, TA =25 °C )
Parameter
Units
GHz
dB
Min.
2
Typ.
Max.
Frequency Range
Small Signal Gain
Gain Flatness
20
6.5
7.5
1.2
+/-dB
dB
Input Return Loss
Output Return Loss
Output P1dB
-10
-10
+27
+8.0
-0.4
290
32
-7.5
-8
dB
dBm
V
+26
-2.0
DC Drain Voltage, VDD
DC Gate VGG (~ 1mA)
DC Current, IDD
Thermal Resistance
+9.5
0.0
V
mA
°C/W
350
MicroWave Technology, Inc., an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2007
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Updated 5/29/2007, Page 1 of 4
MMA-22025B
2 - 20 GHz GaAs MMIC
Power Amplifier
Data Sheet
March 2007
MEASURED DATA (1)
Output Power
Noise Figure
VDD = +8.0V, IDD = 290mA, VG = -0.40V
VDD = +8.0V, IDD = 290mA, VG = -0.50V
Output Pow er @ +25C
NF @ +25C
33
31
29
27
25
23
21
12
10
8
P1dB
P2dB
6
4
2
0
0
5
10
15
20
0
5
10
15
20
Frequency, GHz
Frequency, GHz
Small Signal Gain and VSWR at +25oC
M M A -2 2 0 2 5 B
V D D = + 8 .0 V , ID D = 2 9 0 m A , V G = ~ - 0 .4 0 V
1 4
1 2
1 0
8
6
4
2
0
0
5
1 0
1 5
2 0
2 5
3 0
F re q , G H z
0
-5
-1 0
-1 5
-2 0
-2 5
d B (S (1 ,1 ))
d B (S (2 ,2 ))
0
5
1 0
1 5
2 0
2 5
3 0
F re q , G H z
2
MicroWave Technology, Inc., an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2007
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Updated 5/29/2007, Page 2 of 4
MMA-22025B
2 - 20 GHz GaAs MMIC
Power Amplifier
Data Sheet
March 2007
Small Signal Gain over Temperature Range
MMA-22025B
VDD = +8.0V, IDD = 290mA, VG = ~ - 0.40V
14
12
10
8
6
4
2
0
0
5
10
15
20
25
30
Freq, GHz
_____ @ +25 ºC, _____ @ -40 ºC, _____ @ +85 ºC
(1) Test module per the assembly diagram of this data sheet. Connector (SMA, x2) plus microstrip line losses, ~ 0.23dB
at 10GHz, and 0.45dB at 20GHz, each at RF input and RF output, are de-embedded. Data include RF bond-wires.
Absolute Maximum Ratings (*):
Parameter
Rating
Drain Voltage, VDD
Gate Voltage, VGG
Current, IDD
+ 9.5 V
- 2 V
400 mA
Channel Temperature
Operating Temperature
Storage Temperature
RF Input Power
+175 ºC
-55 ºC to +85 ºC
-65 ºC to +175 ºC
+ 25 dBm
(*) Operation exceeding the limits can cause permanent damage.
3
MicroWave Technology, Inc., an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2007
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Updated 5/29/2007, Page 3 of 4
MMA-22025B
2 - 20 GHz GaAs MMIC
Power Amplifier
Data Sheet
March 2007
MMA-022025B Bonding/Assembly Diagram
Bonding/Assembly Recommendations:
1. Use epoxy with good thermal and electrical conductivity to attach the device. Curing temperature should
maintain at approximately +150 °C.
2. Use 1.0 mil diameter Au wire, 2 parallel each pad for RF input and output pads. Keep the wire length less than 10
mils to minimize its impact to high frequency performance.
4
MicroWave Technology, Inc., an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2007
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Updated 5/29/2007, Page 4 of 4
相关型号：
MMA-022028
Wide Band Medium Power Amplifier, 2000MHz Min, 20000MHz Max, 2 X 1.24 MM, 0.10 MM HEIGHT, DIE
IXYS
MMA-022028-S7
Wide Band Medium Power Amplifier, 2000MHz Min, 20000MHz Max, 8.50 X 7.90 MM, 2.70 MM HEIGHT, SURFACE MOUNT PACKAGE-10
IXYS
MMA-022030B
Wide Band Medium Power Amplifier, 2000MHz Min, 20000MHz Max, 3.00 X 1.24 MM, 0.10 MM HEIGHT, DIE
IXYS
MMA-053223-Q3
Wide Band Medium Power Amplifier, 500MHz Min, 3200MHz Max, 3 X 3 MM, GREEN, QFN-16
IXYS
MMA-053223-Q3M
Wide Band Medium Power Amplifier, 500MHz Min, 3200MHz Max, 1 Func, 3 X 3 MM, GREEN, QFN-16
IXYS
MMA-054025-Q3
Wide Band Medium Power Amplifier, 500MHz Min, 4000MHz Max, 3 X 3 MM, GREEN, QFN-16
IXYS
MMA-061829-10
Wide Band Medium Power Amplifier, 6000MHz Min, 18000MHz Max, 10 X 10 MM, ROHS COMPLIANT PACKAGE-16
IXYS
©2020 ICPDF网 联系我们和版权申明