MMA-022028 [IXYS]
Wide Band Medium Power Amplifier, 2000MHz Min, 20000MHz Max, 2 X 1.24 MM, 0.10 MM HEIGHT, DIE;型号: | MMA-022028 |
厂家: | IXYS CORPORATION |
描述: | Wide Band Medium Power Amplifier, 2000MHz Min, 20000MHz Max, 2 X 1.24 MM, 0.10 MM HEIGHT, DIE 射频 微波 |
文件: | 总4页 (文件大小:180K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MMA-022028
2 - 20 GHz Wideband Distributed Power Amplifier
Preliminary Data Sheet
June 2008
Features:
•
•
•
•
•
•
•
•
•
Frequency Range: 2-20 GHz
P1 dB: +28 dBm
Psat: +29 dBm
Gain: 8.0dB
Gain Flatness: +/- 1 dB
Input/Output Return Loss: 10 dB
Noise Figure: 4.5 dB
MTTF > 100 years @ 85°C ambient temperature
Chip Size: 2.58 X 1.05 X 0.10 mm
Applications:
•
•
•
EW
ECM
Instrumentation
Description:
The MMA-022028 is a 2-20 GHz wideband MMIC distributed broadband power amplifier based on high reliability
AlGaAs/InGaAs pHEMT technology. It provides more than 28 dBm output power at P-1dB, and 29 dBm at Psat. Small
signal gain is typically 8.0 dB across the band. Input and output return loss is typically greater than 10 dB. This part can
be used in broadband EW and instrumentation applications. Special screening for hi-rel and space applications is
available.
Electrical Specifications: (Vds = 8.0V, Vgs = -0.65V, Ids=380mA, Zo=50 ohm, TA =25 °C )
Parameter
Units
GHz
dB
Min.
2
Typ.
Max.
Frequency Range (Min/Max)
Small Signal Gain
Gain Flatness
20
6.0
8.0
1.0
+/-dB
dB
Input Return Loss
Output Return Loss
Output P1dB
-10
dB
-10
dBm
dBm
dB
+26.0
300
+28.0
+29.0
4.5
Output Saturation Power
Noise Figure
Operating Current Range (Min/Max)
Thermal Resistance
mA
380
20
500
°C/W
MicroWave Technology, Inc., an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com email info@mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2008
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Updated 6/9/2008, Page 1 of 4
MMA-022028
2 - 20 GHz Wideband Distributed Power Amplifier
Preliminary Data Sheet
June 2008
Typical RF Performance: (Vds = 8.0V, Ids=380mA, TA =25 °C, 50 Ohm system unless stated otherwise)
MMA-022028 Gain
MMA-022028 Power
10
32
30
28
9
8
7
6
5
4
3
2
1
0
26
24
22
20
18
16
P-1
Ps
Gain(dB)
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19
Frequency(GHz)
Frequency(GHz)
MMA-022028 GHz Return Loss
MMA-022028 Noise Figure
0.0
-5.0
8
7
6
5
4
3
2
1
0
Input
Output
-10.0
-15.0
-20.0
Noise Figure
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19
1
2
3
4
5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
Frequency(GHz)
Frequency(GHz)
MicroWave Technology, Inc., an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com email info@mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2008
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Updated 6/9/2008, Page 2 of 4
MMA-022028
2 - 20 GHz Wideband Distributed Power Amplifier
Preliminary Data Sheet
June 2008
S-parameter: (Vds = 8.0V, Ids=380mA, TA =25 °C, 50 Ohm system)
Freq(GHz)S11(dB) S11(ang) S21(dB) S21(ang) S12(dB) S12(ang) S22(dB) S22(ang)
2
3
4
5
6
7
8
9
-12.44
-12.08
-12.49
-12.7
-12.56
-13.36
-17.98
-27.42
29.82
-76.99 7.577 -14.32 -36.35
-178.8 8.177 -95.71 -33.9
68.24 8.316 -173.1 -32.25
6.63
65.95 -40.44
21.29 -6.571
-67.39 -9.266 -78.32
-147.5 -11.22 -159.4
135.7 -12.74
58.37 -13.82
-19.21 -15.07 -37.28
-95.82 -16.39 -116.3
-173.1 -17.42
111.7 -17.48
35.75 -15.46 -9.927
-36.51 -14.43 -89.32
-109.7 -15.21
174.3 -13.84
93.72 -16.31
17.03
124.8
46.22
-44.77 8.339
-144.6 8.424
109 -31.04
32.85 -30.22
111.6 8.713 -44.31 -29.19
-64.55 8.701 -122.1 -28.18
165.4
77.05
10 -19.55
11 -13.94
12 -12.03
13 -13.92
14 -13.72
15 -13.85
126.8
12.3 8.362
-82.63 8.131
8.54
159.6 -27.56
81.47 -26.76
3.532 -26.35
-149.3 8.088 -75.18 -25.77
164.3 8.217 -154.7 -25.41
-140
168
94.91
10.83
87.52 7.646
-5.015 7.93
-104.1 7.907 -39.83
126 -25.43
16
-16.7
44.57
-24.7
-24.3
14.12
-25.9
17 -22.24
18 -22.12
19 -13.86
20 -15.62
-73.59 -27.36 -130.4
-160.8 -20.33 -173.2
113.1 -13.15
26.89 -12.05
-83.63 7.868 -127.7 -23.82
-176.5 7.217
58.65 7.193
-176.1 6.472
142.6 -23.06
52.09 -22.41
-48.4 -22.61
122.4
47.74
21
-26.5
-63.75 -12.94 -13.57
Absolute Maximum Ratings (*):
SYMBOL
Vds
PARAMETER
UNITS
V
ABSOLUTE MAXIMUM
Drain-Source Voltage
Gate-Source Voltage
Drain Current
9.0
-2.0 to +0.8
600
Vgs
V
Ids
mA
mA
W
Igs
Gate Current
3.0
Pdiss
Pin max
Tch
DC Power Dissipation
RF Input Power
5.0
dBm
ºC
+25
Channel Temperature
Storage Temperature
150
Tstg
ºC
-60 to 150
(*) Operation of this device above any one of these parameters may cause permanent damage.
MicroWave Technology, Inc., an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com email info@mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2008
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Updated 6/9/2008, Page 3 of 4
MMA-022028
2 - 20 GHz Wideband Distributed Power Amplifier
Preliminary Data Sheet
June 2008
Mechanical Diagram:
Application Information:
Notes: put 10 mils ridge underneath the MMIC chip to make MMIC same height with the circuit; make output bond short to improve the performance.
MicroWave Technology, Inc., an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com email info@mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2008
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Updated 6/9/2008, Page 4 of 4
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