MMA-022020B [IXYS]
Wide Band Medium Power Amplifier, 2000MHz Min, 20000MHz Max, 2.85 X 1.24 MM, 0.10 MM HEIGHT, DIE;
| 型号： | MMA-022020B |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Wide Band Medium Power Amplifier, 2000MHz Min, 20000MHz Max, 2.85 X 1.24 MM, 0.10 MM HEIGHT, DIE 射频 微波 |
| 文件： | 总4页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMA-022020B
2 - 20 GHz GaAs MMIC
Medium Power Amplifier
Data Sheet
March 2007
Features:
•
•
•
•
•
•
•
•
•
Usable Frequency Range: 1 - 22 GHz
P1dB: 22.5 dBm
Gain: 8.0 dB
Fully Matched Input/Output
On-Chip DC Bias RF Choke
On-Chip Input/Output DC Blocking
Die Size: 2.85 x 1.24 x 0.1 mm
Robust 0.25um pHEMT Technology
MTTF > 1.0E6 Hours @ +85 °C Ambient
Description:
The MMA-022020B is a 2 - 20GHz broadband medium power amplifier with 22.5 dBm output power. It is realized in
advanced 0.25um AlGaAs/InGaAs pHEMT technology. The usable frequency range extends to 1 – 22 GHz. With on-chip
input/output blocking capacitors and DC supply RF choke circuitry, it only requires simple DC bias circuits and RF
connections for broad range applications.
Electrical Specifications: (At VDD = + 7.0V, IDD = 220 mA, VGG = - 0.50V, TA =25 °C )
Parameter
Units
GHz
dB
Min.
2
Typ.
Max.
Frequency Range
Small Signal Gain
Gain Flatness
20
7.0
8.0
1.5
+/-dB
dB
Input Return Loss
Output Return Loss 2-18 GHz
Output Return Loss 18-20 GHz
Output P1dB
-10
-8.5
-10
dB
-12
dB
-9
-7.5
dBm
dB
+20
-2.0
+22.5
5.4
Noise Figure
DC Drain Voltage, VDD
DC Gain Voltage, VGG
DC Current, IDD
V
+7.0
-0.5
220
38
+9.5
0.0
V
mA
°C/W
260
Thermal Resistance
MicroWave Technology, Inc., an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2007
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Updated 5/29/2007, Page 1 of 4
MMA-022020B
2 - 20 GHz GaAs MMIC
Medium Power Amplifier
Data Sheet
March 2007
MEASURED DATA (1)
Output Power
Noise Figure
VDD = +7.0V, IDD = 220mA, VG = -0.50V
VDD = +7.0V, IDD = 220mA, VG = -0.50V
Output Power @ +25C
NF @ +25C
28
26
24
22
20
18
10
8
6
4
2
0
P1dB
P2dB
P3dB
0
5
10
15
20
0
5
10
15
20
Frequency, GHz
Frequency, GHz
Small Signal Gain and VSWR at +25oC
M M A - 2 2 0 2 0 B
V D D
= + 7 . 0 V , ID D = 2 2 0 m A , V G = ~ - 0 . 5 0 V
1 4
1 2
1 0
8
6
4
2
0
0
5
1 0
1 5
F r e q , G H z
2 0
2 5
3 0
0
- 5
- 1 0
- 1 5
- 2 0
- 2 5
d B ( S ( 1 , 1 ) )
d B ( S ( 2 , 2 ) )
0
5
1 0
1 5
F r e q , G H z
2 0
2 5
3 0
MicroWave Technology, Inc., an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2007
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Updated 5/29/2007, Page 2 of 4
MMA-022020B
2 - 20 GHz GaAs MMIC
Medium Power Amplifier
Data Sheet
March 2007
Small Signal Gain over Temperature Range
MMA-22020B
VDD = +7.0V, IDD = 220mA, VG = ~ - 0.50V
14
12
10
8
6
4
2
0
0
5
10
15
20
25
30
Freq, GHz
_____ @ +25 ºC, _____ @ -40 ºC, _____ @ +85 ºC
(1) Test module per the assembly diagram of this data sheet. Two SMA Connectors and microstrip line losses,
approximately 0.5dB at 10GHz, and 0.9dB at 20GHz, are de-embedded. Data include RF bond-wires.
Absolute Maximum Ratings (*):
Parameter
Rating
Drain Voltage, VDD
Gate Voltage, VGG
Current, IDD
+ 9.5 V
- 2 V
300 mA
Channel Temperature
Operating Temperature
Storage Temperature
RF Input Power
+175 ºC
-55 ºC to +85 ºC
-65 ºC to +175 ºC
+ 20 dBm
(*) Operation exceeding the limits can cause permanent damage.
MicroWave Technology, Inc., an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2007
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Updated 5/29/2007, Page 3 of 4
MMA-022020B
2 - 20 GHz GaAs MMIC
Medium Power Amplifier
Data Sheet
March 2007
MMA-022020B Bonding/Assembly Diagram
Bonding/Assembly Recommendations:
1. Use epoxy with good thermal and electrical conductivity to attach the device. Curing temperature should
maintain at approximately +150 °C.
2. Use 1.0 mil diameter Au wire, 2 parallel each pad for RF input and output pads. Keep the wire length less than 10
mils to minimize its impact to high frequency performance.
MicroWave Technology, Inc., an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2007
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Updated 5/29/2007, Page 4 of 4
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