MCMA265PD1600KB [IXYS]
Silicon Controlled Rectifier, 421A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, ROHS COMPLIANT, Y1, 5 PIN;
| 型号： | MCMA265PD1600KB |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Silicon Controlled Rectifier, 421A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, ROHS COMPLIANT, Y1, 5 PIN 局域网 栅 栅极 |
| 文件： | 总5页 (文件大小：307K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MCMA265PD1600KB
preliminary
=
VRRM
ITAV
VT
2x1600V
260A
Thyristor \ Diode Module
=
=
1.15V
Phase leg
Part number
MCMA265PD1600KB
Backside: isolated
3
1
2
5
4
Y1
Features / Advantages:
Applications:
Package:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Isolation Voltage:
● Industry standard outline
● RoHS compliant
V~
4800
● Direct Copper Bonded Al2O3-ceramic
● Power converter
● AC power control
● Lighting and temperature control
● Soldering pins for PCB mounting
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20170116c
© 2017 IXYS all rights reserved
MCMA265PD1600KB
preliminary
Ratings
Rectifier
Symbol
VRSM/DSM
Definition
Conditions
min. typ. max. Unit
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 140°C
TVJ = 25°C
1700
1600
300
V
V
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
VRRM/DRM
IR/D
VR/D =1600 V
VR/D =1600 V
IT = 300 A
IT = 600 A
IT = 300 A
IT = 600 A
TC = 85°C
180° sine
µA
reverse current, drain current
30 mA
forward voltage drop
1.19
V
V
V
V
A
A
V
VT
1.46
1.15
1.44
260
TVJ
=
°C
125
average forward current
RMS forward current
TVJ = 140°C
TVJ = 140°C
ITAV
IT(RMS)
VT0
408
0.80
threshold voltage
for power loss calculation only
slope resistance
0.75 mΩ
0.16 K/W
K/W
rT
RthJC
RthCH
Ptot
thermal resistance junction to case
thermal resistance case to heatsink
0.04
TC = 25°C
TVJ = 45°C
VR = 0 V
720
8.50
9.18
7.23
7.81
W
kA
kA
kA
kA
total power dissipation
max. forward surge current
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VR = 400V f = 1 MHz
tP = 30 µs
ITSM
TVJ = 140°C
VR = 0 V
value for fusing
TVJ = 45°C
VR = 0 V
I²t
361.3 kA²s
350.6 kA²s
261.0 kA²s
253.4 kA²s
pF
TVJ = 140°C
VR = 0 V
junction capacitance
TVJ = 25°C
TC = 140°C
366
CJ
120
60
W
W
W
PGM
max. gate power dissipation
tP = 500 µs
20
PGAV
average gate power dissipation
critical rate of rise of current
TVJ = 140°C; f = 50 Hz
repetitive, IT = 750 A
100 A/µs
(di/dt)cr
1
tP = 200 µs;diG /dt =
IG = 1A; V = ⅔ VDRM
V = ⅔ VDRM
A/µs;
non-repet., IT = 268 A
TVJ = 140°C
500 A/µs
critical rate of rise of voltage
gate trigger voltage
1000 V/µs
(dv/dt)cr
VGT
RGK = ∞; method 1 (linear voltage rise)
VD = 6 V
TVJ = 25°C
TVJ = -40°C
TVJ = 25°C
TVJ = -40°C
TVJ = 140°C
2
3
V
V
gate trigger current
VD = 6 V
150 mA
220 mA
IGT
gate non-trigger voltage
gate non-trigger current
latching current
VD = ⅔ VDRM
0.25
V
VGD
IGD
IL
10 mA
tp = 30 µs
TVJ = 25°C
200 mA
IG = 0.45A; diG/dt = 0.45 A/µs
VD = 6 V RGK = ∞
holding current
TVJ = 25°C
TVJ = 25°C
150 mA
IH
gate controlled delay time
VD = ½ V
2
µs
tgd
DRM
IG
VR = 100 V; IT = 300 A; V = ⅔ VDRM TVJ =125 °C
di/dt = 10 A/µs dv/dt = 50 V/µs µs
=
1A; diG/dt =
1 A/µs
turn-off time
200
µs
tq
tp = 200
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20170116c
© 2017 IXYS all rights reserved
MCMA265PD1600KB
preliminary
Ratings
Package Y1
Symbol
IRMS
Definition
Conditions
min. typ. max. Unit
per terminal
600
140
125
125
A
°C
°C
°C
g
RMS current
-40
-40
-40
TVJ
virtual junction temperature
operation temperature
storage temperature
Top
Tstg
680
Weight
4.5
11
7
Nm
MD
mounting torque
terminal torque
M
13 Nm
T
terminal to terminal
terminal to backside
16.0
16.0
4800
4000
mm
mm
V
dSpp/App
dSpb/Apb
creepage distance on surface | striking distance through air
t = 1 second
V
isolation voltage
ISOL
50/60 Hz, RMS; IISOL ≤ 1 mA
t = 1 minute
V
Production
Index (PI)
Part description
M = Module
Date Code
(DC)
C = Thyristor (SCR)
M = Thyristor
Circuit
yywwAA
A = (up to 1800V)
265 = Current Rating [A]
PD = Phase leg
Part Number
Lot.No: xxxxxx
1600 = Reverse Voltage [V]
KB = Y1-CU
Data Matrix: part no. (1-19), DC + PI (20-25), lot.no.# (26-31),
blank (32), serial no.# (33-36)
Ordering
Ordering Number
Marking on Product
MCMA265PD1600KB
Delivery Mode
Quantity Code No.
509202
Standard
MCMA265PD1600KB
Box
3
TVJ = 140°C
Equivalent Circuits for Simulation
* on die level
Thyristor
V0
I
R0
threshold voltage
slope resistance *
0.8
V
V0 max
R0 max
0.51
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20170116c
© 2017 IXYS all rights reserved
MCMA265PD1600KB
preliminary
Outlines Y1
3x M8
2.8 x 0.8
20
22.5
35
28.5
1
2
3
6.2
80
92
115
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = white, cathode = red
Type ZY 180L (L = Left for pin pair 4/5)
UL 758, style 3751
Type ZY 180R (R = Right for pin pair 6/7)
3
1
2
5
4
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20170116c
© 2017 IXYS all rights reserved
MCMA265PD1600KB
preliminary
Thyristor
800
100
10
1: IGT TVJ = 130°C
,
2: IGT, T = 25°C
TVJ = 25°C
4
700
600
3: IGT, TVJ = -40°C
3
6
5
2
10
500
4
1
IT, IF
tgd
VG
400
1
limit
[A]
[µs]
[V]
300
typ.
1
200
100
TVJ = 125°C
4: PGM = 20 W
5: PGM = 60 W
6: PGM = 120 W
IGD TVJ = 130°C
,
TVJ = 25°C
1.0
0
0.0
0.1
0.01
0.1
10-3
0.5
1.5
2.0
0.10
1.00
10.00
10-2
10-1
100
101
102
VT, VF [A]
IG [A]
IG [A]
Fig. 1 Forward voltage drop
Fig. 2 Gate trigger delay time
Fig. 3 Gate trigger
characteristics
0.25
RthJC for various conduction angles d:
d
RthJC (K/W)
0.20
0.15
DC
180°
120°
60°
0.157
0.168
0.177
0.200
0.243
ZthJC
[K/W]
30°
30°
60°
Constants for Zth calculation:
0.10
120°
180°
DC
i
Rthi (K/W)
ti (s)
1
2
3
4
0.0076
0.0406
0.0944
0.0147
0.0054
0.098
0.54
0.05
12
0.00
10-3
10-2
10-1
100
101
102
t [s]
Fig. 4 Transient thermal impedance junction to case (per thyristor/diode)
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20170116c
© 2017 IXYS all rights reserved
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