MCMA35PD1600TB [LITTELFUSE]
Silicon Controlled Rectifier, 35000mA I(T), 1600V V(RRM),;
| 型号： | MCMA35PD1600TB |
| 厂家： | 
LITTELFUSE |
| 描述： | Silicon Controlled Rectifier, 35000mA I(T), 1600V V(RRM), 栅 栅极 |
| 文件： | 总5页 (文件大小：377K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MCMA35PD1600TB
=
VRRM
ITAV
VT
2x1600V
35A
Thyristor \ Diode Module
=
=
1.22V
Phase leg
Part number
MCMA35PD1600TB
Backside: isolated
3
1
2
5
4
TO-240AA
Features / Advantages:
Applications:
Package:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Isolation Voltage:
● Industry standard outline
● RoHS compliant
V~
4800
● Direct Copper Bonded Al2O3-ceramic
● Power converter
● AC power control
● Lighting and temperature control
● Soldering pins for PCB mounting
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
www.littelfuse.com/disclaimer-electronics.
and may not be used in, all applications. Read complete Disclaimer Notice at
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191205d
© 2019 IXYS all rights reserved
MCMA35PD1600TB
Ratings
Rectifier
Symbol
VRSM/DSM
Definition
Conditions
min. typ. max. Unit
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 140°C
TVJ = 25°C
1700
1600
100
6
V
V
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
VRRM/DRM
IR/D
VR/D =1600 V
VR/D =1600 V
IT = 35 A
IT = 70 A
IT = 35 A
IT = 70 A
TC = 85°C
180° sine
µA
mA
V
reverse current, drain current
forward voltage drop
1.23
1.50
1.22
1.56
35
VT
V
TVJ
=
°C
V
125
V
average forward current
RMS forward current
TVJ = 140°C
TVJ = 140°C
A
ITAV
IT(RMS)
VT0
55
A
0.87
V
threshold voltage
for power loss calculation only
slope resistance
9.8 mΩ
0.9 K/W
K/W
rT
RthJC
RthCH
Ptot
thermal resistance junction to case
thermal resistance case to heatsink
0.2
TC = 25°C
TVJ = 45°C
VR = 0 V
120
520
560
440
475
W
A
A
A
A
total power dissipation
max. forward surge current
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VR = 400V f = 1 MHz
tP = 30 µs
ITSM
TVJ = 140°C
VR = 0 V
value for fusing
TVJ = 45°C
VR = 0 V
I²t
1.35 kA²s
1.31 kA²s
970 A²s
940 A²s
pF
TVJ = 140°C
VR = 0 V
junction capacitance
TVJ = 25°C
TC = 140°C
22
CJ
10
5
W
W
W
PGM
max. gate power dissipation
tP = 300 µs
0.5
PGAV
average gate power dissipation
critical rate of rise of current
TVJ = 140°C; f = 50 Hz
repetitive, IT = 105 A
150 A/µs
(di/dt)cr
0.45
tP = 200 µs;diG /dt =
A/µs;
IG = 0.45A; V = ⅔ VDRM
V = ⅔ VDRM
non-repet., IT = 35 A
TVJ = 140°C
500 A/µs
critical rate of rise of voltage
gate trigger voltage
1000 V/µs
(dv/dt)cr
VGT
RGK = ∞; method 1 (linear voltage rise)
VD = 6 V
TVJ = 25°C
TVJ = -40°C
TVJ = 25°C
TVJ = -40°C
TVJ = 140°C
1.5
1.6
V
V
gate trigger current
VD = 6 V
78 mA
IGT
200 mA
gate non-trigger voltage
gate non-trigger current
latching current
VD = ⅔ VDRM
0.2
5
V
VGD
IGD
IL
mA
tp = 10 µs
TVJ = 25°C
450 mA
IG = 0.45A; diG/dt = 0.45 A/µs
VD = 6 V RGK = ∞
holding current
TVJ = 25°C
TVJ = 25°C
200 mA
IH
gate controlled delay time
VD = ½ V
2
µs
µs
tgd
DRM
IG = 0.45A; diG/dt = 0.45 A/µs
turn-off time
VR = 100 V; IT
=
35A; V = ⅔ VDRM TVJ =125 °C
µs
185
tq
di/dt = 10 A/µs dv/dt = 20 V/µs
tp = 200
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191205d
© 2019 IXYS all rights reserved
MCMA35PD1600TB
Ratings
Package TO-240AA
Symbol
IRMS
Definition
Conditions
min. typ. max. Unit
per terminal
80
140
125
125
A
°C
°C
°C
g
RMS current
-40
-40
-40
TVJ
virtual junction temperature
Top
operation temperature
storage temperature
Tstg
81
Weight
2.5
2.5
9.7
4
4
Nm
Nm
mm
mm
V
MD
mounting torque
terminal torque
M
T
terminal to terminal
terminal to backside
13.0
dSpp/App
dSpb/Apb
creepage distance on surface | striking distance through air
16.0 16.0
4800
t = 1 second
V
isolation voltage
ISOL
50/60 Hz, RMS; IISOL ≤ 1 mA
t = 1 minute
4000
V
Part description
M = Module
C = Thyristor (SCR)
M = Thyristor
A = (up to 1800V)
35 = Current Rating [A]
PD = Phase leg
1600 = Reverse Voltage [V]
TB = TO-240AA-1B
Ordering
Ordering Number
Marking on Product
MCMA35PD1600TB
Delivery Mode
Quantity Code No.
36 515933
Standard
MCMA35PD1600TB
Box
TVJ =140°C
Equivalent Circuits for Simulation
* on die level
Thyristor
V0
I
R0
threshold voltage
slope resistance *
0.87
8.6
V
V0 max
R0 max
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191205d
© 2019 IXYS all rights reserved
MCMA35PD1600TB
Outlines TO-240AA
3
1
2
5
4
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191205d
© 2019 IXYS all rights reserved
MCMA35PD1600TB
Thyristor
100
500
400
104
VR = 0 V
50 Hz, 80% VRRM
80
60
I2t
ITSM
300
[A]
TVJ = 45°C
TVJ = 45°C
103
IT
TVJ = 125°C
[A2s]
40
20
0
140°C
[A]
TVJ = 140°C
TVJ = 140°C
200
TVJ = 25°C
100
102
0.5
1.0
1.5
2.0
0.01
0.1
1
1
2
3
4
5 6 7 8 10
VT [V]
t [s]
t [ms]
Fig. 3 I2t versus time (1-10 s)
Fig. 2 Surge overload current
ITSM: crest value, t: duration
Fig. 1 Forward characteristics
10
100.0
10.0
100
1: I
, T = 140°C
GD VJ
2: I , T
GT VJ
= 25°C
3: I , T = -40°C
GT VJ
dc =
1
0.5
0.4
6
80
60
40
20
0
5
TVJ = 25°C
4
3
0.33
0.17
0.08
2
VG
[V]
tgd
ITAVM
[A]
1
1
lim.
typ.
[μs]
1.0
0.1
4: P
= 0.5 W
GAV
GM
GM
5: P
6: P
=
5 W
= 10 W
0.1
1
10
100
1000 10000
0.01
0.10
1.00
IG [A]
10.00
0
40
80
120
160
IG [mA]
Tcase [°C]
Fig. 6 Max. forward current at
case temperature
Fig. 5 Gate controlled delay time tgd
Fig. 4 Gate voltage & gate current
1.00
60
40
20
0
dc =
1
0.5
0.4
0.33
0.17
0.08
RthHA
0.80
0.4
0.6
0.8
1.0
2.0
4.0
Ptot
[W]
ZthJC
0.60
[K/W]
i
Rthi (K/W)
ti (s)
0.40
1
2
3
4
5
0.0200
0.0900
0.1900
0.3700
0.2300
0.0004
0.0090
0.0140
0.0600
0.3900
0.20
0.00
1
10
100
1000
10000
0
10
20
30
40
0
40
80
Tamb [°C]
120
160
t [ms]
IT(AV) [A]
Fig. 8 Transient thermal impedance junction to case
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191205d
© 2019 IXYS all rights reserved
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