MCMA700P1600CA [LITTELFUSE]
Silicon Controlled Rectifier,;
| 型号： | MCMA700P1600CA |
| 厂家： | 
LITTELFUSE |
| 描述： | Silicon Controlled Rectifier, |
| 文件： | 总5页 (文件大小：223K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MCMA700P1600CA
=
VRRM
ITAV
VT
2x1600V
700A
Thyristor Module
=
=
1.11V
Phase leg
Part number
MCMA700P1600CA
Backside: isolated
3
1
2
6
7
5
4
ComPack
Features / Advantages:
Applications:
Package:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Isolation Voltage:
● Industry standard outline
● RoHS compliant
V~
4800
● Direct Copper Bonded Al2O3-ceramic
● Power converter
● AC power control
● Lighting and temperature control
● Soldering pins for PCB mounting
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
● Phase Change Material available
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
www.littelfuse.com/disclaimer-electronics.
and may not be used in, all applications. Read complete Disclaimer Notice at
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191217d
© 2019 IXYS all rights reserved
MCMA700P1600CA
Ratings
Rectifier
Symbol
VRSM/DSM
Definition
Conditions
min. typ. max. Unit
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
1700
1600
2
V
V
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
VRRM/DRM
IR/D
VR/D =1600 V
VR/D =1600 V
IT = 700 A
IT =1400 A
IT = 700 A
IT =1400 A
TC = 85°C
180° sine
mA
reverse current, drain current
40 mA
forward voltage drop
1.16
V
V
V
V
A
A
V
VT
1.41
1.11
1.41
700
TVJ
=
°C
125
average forward current
RMS forward current
TVJ = 140°C
TVJ = 140°C
ITAV
IT(RMS)
VT0
1100
0.82
threshold voltage
for power loss calculation only
slope resistance
0.4 mΩ
0.05 K/W
K/W
rT
RthJC
RthCH
Ptot
thermal resistance junction to case
thermal resistance case to heatsink
0.02
TC = 25°C
TVJ = 45°C
VR = 0 V
2300
19.0
20.5
16.2
17.4
W
kA
kA
kA
kA
total power dissipation
max. forward surge current
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VR = 400V f = 1 MHz
tP = 30 µs
ITSM
TVJ = 140°C
VR = 0 V
value for fusing
TVJ = 45°C
VR = 0 V
I²t
1.81 MA²s
1.75 MA²s
1.30 MA²s
1.27 MA²s
pF
TVJ = 140°C
VR = 0 V
junction capacitance
TVJ = 25°C
TC = 140°C
876
CJ
240
120
40
W
W
W
PGM
max. gate power dissipation
tP = 300 µs
PGAV
average gate power dissipation
critical rate of rise of current
TVJ = 140°C; f = 50 Hz
repetitive, IT =2100 A
100 A/µs
(di/dt)cr
1
tP = 200 µs;diG /dt =
IG = 1A; V = ⅔ VDRM
V = ⅔ VDRM
A/µs;
non-repet., IT = 700 A
TVJ = 140°C
500 A/µs
critical rate of rise of voltage
gate trigger voltage
1000 V/µs
(dv/dt)cr
VGT
RGK = ∞; method 1 (linear voltage rise)
VD = 6 V
TVJ = 25°C
TVJ = -40°C
TVJ = 25°C
TVJ = -40°C
TVJ = 140°C
2
3
V
V
gate trigger current
VD = 6 V
300 mA
400 mA
IGT
gate non-trigger voltage
gate non-trigger current
latching current
VD = ⅔ VDRM
tp = 30 µs
0.25
V
VGD
IGD
IL
10 mA
TVJ = 25°C
400 mA
IG
=
1A; diG/dt =
1 A/µs
1 A/µs
holding current
VD = 6 V RGK = ∞
TVJ = 25°C
TVJ = 25°C
300 mA
IH
gate controlled delay time
VD = ½ V
2
µs
tgd
DRM
IG
=
1A; diG/dt =
turn-off time
VR = 100 V; IT = 700A; V = ⅔ VDRM TVJ =125 °C
di/dt = 10 A/µs dv/dt = 50 V/µs µs
350
µs
tq
tp = 200
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191217d
© 2019 IXYS all rights reserved
MCMA700P1600CA
Ratings
Package ComPack
Symbol
IRMS
Definition
Conditions
min. typ. max. Unit
per terminal
1200
140
125
125
A
°C
°C
°C
g
RMS current
-40
-40
-40
TVJ
virtual junction temperature
Top
operation temperature
storage temperature
Tstg
500
Weight
3
12
5
Nm
MD
mounting torque
terminal torque
M
14 Nm
T
terminal to terminal
terminal to backside
21.0
18.0
4800
4000
mm
mm
V
dSpp/App
dSpb/Apb
creepage distance on surface | striking distance through air
t = 1 second
V
isolation voltage
ISOL
50/60 Hz, RMS; IISOL ≤ 1 mA
t = 1 minute
V
Part description
M = Module
C = Thyristor (SCR)
M = Thyristor
Assembly Line
Circuit Diagram
A = (up to 1800V)
700 = Current Rating [A]
P = Phase leg
Date Code
Part No.
yywwA
YYYYYYYYYYY
2D Matrix
1600 = Reverse Voltage [V]
CA = ComPack
Ordering
Standard
Ordering Number
Marking on Product
MCMA700P1600CA
Delivery Mode
Quantity Code No.
513835
MCMA700P1600CA
Box
3
TVJ =140°C
Equivalent Circuits for Simulation
* on die level
Thyristor
V0
I
R0
threshold voltage
slope resistance *
0.82
0.21
V
V0 max
R0 max
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191217d
© 2019 IXYS all rights reserved
MCMA700P1600CA
Outlines ComPack
21.2
7.2
66.0 +0.0
-0.7
0.2
5.0
0.3
27.25
label
A
baseplate typ. 100 µm convex
over 54.5 mm before mounting
baseplate typ. 100 µm convex
over 62.5 mm before mounting
61.0
92.0 +0.5
-0.3
Optional accessories for modules
Keyed gate/cathode twin plugs with
wire length = 350 mm, gate = white, cathode = red
0.5
107
Type ZY 180L (L = Left for pin pair 4/5)
Type ZY 180R (R = Right for pin pair 6/7)
UL 758,
style 3751
48.0
0.5
39.5
A (2:1)
M10x16 (3x)
18.0
0.8
80,0
93,5
3
1
2
6 7
5 4
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191217d
© 2019 IXYS all rights reserved
MCMA700P1600CA
Thyristor
1400
16000
14000
12000
107
VR = 0 V
50 Hz, 80% VRRM
1200
1000
IT
I2t
800
TVJ = 45°C
TVJ = 45°C
106
ITSM
10000
[A]
[A]
600
[A2s]
TVJ = 140°C
TVJ = 125°C
400
200
0
TVJ = 140°C
140°C
8000
TVJ = 25°C
6000
105
0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.01
0.1
1
1
2
3
4
5 6 7 8 910
VT [V]
t [s]
t [ms]
Fig. 3 I2t versus time (1-10 s)
Fig. 2 Surge overload current
ITSM: crest value, t: duration
Fig. 1 Forward characteristics
100
10
100.0
10.0
1400
PGM = 240 W; tp
120 W; tp = 300 µs
PGAV = 40 W
= 30 µs
1200
1000
800
dc =
1
0.5
0.4
0.33
0.17
0.08
TVJ = 125°C
VG
tgd
ITAVM
[V]
600
400
200
0
lim.
typ.
[µs]
[A]
1
1.0
IGT (TVJ
IGT (TVJ
=
=
-40°C)
25°C)
IGD (TVJ = 140°C)
0.1
0.1
0.01
0.01
0.1
1 10
0.10
1.00
IG [A]
10.00
0
40
80
120
160
IG [A]
Tcase [°C]
Fig. 6 Max. forward current at
case temperature
Fig. 5 Gate controlled delay time tgd
Fig. 4 Gate voltage & gate current
0.06
dc =
1
0.5
0.4
0.33
0.17
0.08
1000
i
Rthi (K/W)
0.0020
0.0080
0.0130
0.0370
ti (s)
0.05
0.04
0.03
RthHA
1
2
3
4
0.0150
0.0800
0.2200
0.3800
0.05
0.10
0.20
0.30
0.40
0.50
800
Ptot
ZthJC
600
[W]
400
[K/W]
0.02
200
0
0.01
0.00
1
10
100
t [ms]
Fig. 8 Transient thermal impedance junction to case
1000
10000
0
200 400 600 800
0
40
80
Tamb [°C]
120
160
IT(AV) [A]
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191217d
© 2019 IXYS all rights reserved
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