MCMA50PD1600TB [LITTELFUSE]

Silicon Controlled Rectifier, 50000mA I(T), 1600V V(RRM),;


型号：	MCMA50PD1600TB
厂家：	LITTELFUSE
描述：	Silicon Controlled Rectifier, 50000mA I(T), 1600V V(RRM), 栅栅极
文件：	总5页 (文件大小：377K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MCMA50PD1600TB

V_RRM

I_TAV

V_T

2x1600V

50A

Thyristor \ Diode Module

1.17V

Phase leg

Part number

MCMA50PD1600TB

Backside: isolated

TO-240AA

Features / Advantages:

Applications:

Package:

● Thyristor for line frequency

● Planar passivated chip

● Long-term stability

● Line rectifying 50/60 Hz

● Softstart AC motor control

● DC Motor control

● Isolation Voltage:

● Industry standard outline

● RoHS compliant

4800

● Direct Copper Bonded Al2O3-ceramic

● Power converter

● AC power control

● Lighting and temperature control

● Soldering pins for PCB mounting

● Base plate: DCB ceramic

● Reduced weight

● Advanced power cycling

Disclaimer Notice

Information furnished is believed to be accurate and reliable. However, users should independently

evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,

www.littelfuse.com/disclaimer-electronics.

and may not be used in, all applications. Read complete Disclaimer Notice at

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20191205d

MCMA50PD1600TB

Ratings

Rectifier

Symbol

V_RSM/DSM

Definition

Conditions

min. typ. max. Unit

T_VJ= 25°C

T_VJ= 140°C

T_VJ= 25°C

1700

1600

100

max. non-repetitive reverse/forward blocking voltage

max. repetitive reverse/forward blocking voltage

V_RRM/DRM

I_R/D

V_R/D=1600 V

I_T= 50 A

I_T= 100 A

I_T= 50 A

I_T= 100 A

T_C= 85°C

180° sine

µA

reverse current, drain current

forward voltage drop

1.25

1.48

1.17

1.44

V_T

T_VJ

°C

125

average forward current

RMS forward current

T_VJ= 140°C

I_TAV

I_T(RMS)

V_T0

0.89

threshold voltage

for power loss calculation only

slope resistance

5.3 mΩ

0.7 K/W

K/W

r_T

R_thJC

R_thCH

P_tot

thermal resistance junction to case

thermal resistance case to heatsink

0.2

T_C= 25°C

T_VJ= 45°C

V_R= 0 V

160

800

865

680

735

total power dissipation

max. forward surge current

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

V_R= 400V f = 1 MHz

t_P= 30 µs

I_TSM

T_VJ= 140°C

V_R= 0 V

value for fusing

T_VJ= 45°C

V_R= 0 V

I²t

3.20 kA²s

3.12 kA²s

2.31 kA²s

2.25 kA²s

T_VJ= 140°C

V_R= 0 V

junction capacitance

T_VJ= 25°C

T_C= 140°C

C_J

P_GM

max. gate power dissipation

t_P= 300 µs

0.5

P_GAV

average gate power dissipation

critical rate of rise of current

T_VJ= 140°C; f = 50 Hz

repetitive, I_T= 150 A

150 A/µs

(di/dt)_cr

0.45

t_P= 200 µs;di_G/dt =

A/µs;

I_G= 0.45A; V = ⅔ V_DRM

V = ⅔ V_DRM

non-repet., I_T= 50 A

T_VJ= 140°C

500 A/µs

critical rate of rise of voltage

gate trigger voltage

1000 V/µs

(dv/dt)_cr

V_GT

R_GK= ∞; method 1 (linear voltage rise)

V_D= 6 V

T_VJ= 25°C

T_VJ= -40°C

T_VJ= 25°C

T_VJ= -40°C

T_VJ= 140°C

1.5

1.6

gate trigger current

V_D= 6 V

78 mA

I_GT

200 mA

gate non-trigger voltage

gate non-trigger current

latching current

V_D= ⅔ V_DRM

0.2

V_GD

I_GD

I_L

t_p= 10 µs

T_VJ= 25°C

200 mA

I_G= 0.45A; di_G/dt = 0.45 A/µs

V_D= 6 V R_GK= ∞

holding current

T_VJ= 25°C

100 mA

I_H

gate controlled delay time

V_D= ½ V

µs

t_gd

DRM

I_G= 0.45A; di_G/dt = 0.45 A/µs

turn-off time

V_R= 100 V; I_T

50A; V = ⅔ V_DRMT_VJ=125 °C

µs

150

t_q

di/dt = 10 A/µs dv/dt = 20 V/µs

t_p= 200

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20191205d

MCMA50PD1600TB

Ratings

Package TO-240AA

Symbol

I_RMS

Definition

Conditions

min. typ. max. Unit

per terminal

100

140

125

°C

RMS current

-40

T_VJ

virtual junction temperature

T_op

operation temperature

storage temperature

T_stg

Weight

2.5

9.7

M_D

mounting torque

terminal torque

terminal to terminal

terminal to backside

13.0

d_Spp/App

d_Spb/Apb

creepage distance on surface | striking distance through air

16.0 16.0

4800

t = 1 second

isolation voltage

ISOL

50/60 Hz, RMS; I_ISOL≤ 1 mA

t = 1 minute

4000

Part description

M = Module

C = Thyristor (SCR)

M = Thyristor

A = (up to 1800V)

50 = Current Rating [A]

PD = Phase leg

1600 = Reverse Voltage [V]

TB = TO-240AA-1B

Ordering

Ordering Number

Marking on Product

MCMA50PD1600TB

Delivery Mode

Quantity Code No.

36 515028

Standard

MCMA50PD1600TB

Box

T_VJ=140°C

Equivalent Circuits for Simulation

* on die level

Thyristor

V₀

R₀

threshold voltage

slope resistance *

0.89

4.1

V_{0 max}

R_{0 max}

mΩ

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20191205d

MCMA50PD1600TB

Outlines TO-240AA

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20191205d

MCMA50PD1600TB

Thyristor

160

800

10⁴

V_R= 0 V

50 Hz, 80% V_RRM

120

T_VJ= 45°C

I_T

I²t

I_TSM

10³

T_VJ= 140°C

T_VJ= 45°C

T_VJ= 125°C

140°C

[A]

[A²s]

[A]

400

T_VJ= 140°C

T_VJ= 25°C

10²

0.5

1.0

1.5

2.0

0.01

0.1

5 6 7 8 910

V_T[V]

t [s]

t [ms]

Fig. 3 I²t versus time (1-10 s)

Fig. 2 Surge overload current

I_TSM: crest value, t: duration

Fig. 1 Forward characteristics

100.0

10.0

120

1: I

, T = 140°C

GD VJ

2: I , T

GT VJ

25°C

3: I , T

GT VJ

-40°C

dc =

0.5

0.4

T_VJ= 25°C

0.33

0.17

0.08

V_G

[V]

t_gd

I_TAVM

[A]

lim.

typ.

[μs]

1.0

0.1

4: P

= 0.5 W

GAV

5: P

6: P

5 W

10 W

0.1

100

1000 10000

0.01

0.10

1.00

I_G[A]

10.00

120

160

I_G[mA]

T_case[°C]

Fig. 6 Max. forward current at

case temperature

Fig. 5 Gate controlled delay time t_gd

Fig. 4 Gate voltage & gate current

0.80

0.70

dc =

0.5

0.4

0.33

0.17

0.08

R_thHA

0.2

0.4

0.6

0.8

1.0

2.0

0.60

0.50

_tot60

Z_thJC

[W]

0.40

[K/W]

R_thi(K/W)

t_i(s)

0.30

0.20

0.10

0.00

0.0100

0.0500

0.1500

0.3200

0.1700

0.0004

0.0090

0.0140

0.0500

0.3600

100

1000

10000

T_amb[°C]

120

160

t [ms]

I_T(AV)[A]

Fig. 8 Transient thermal impedance junction to case

Fig. 7a Power dissipation versus direct output current

Fig. 7b and ambient temperature

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20191205d

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