IXTY05N100 [IXYS]
Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC PACKAGE-3;
| 型号： | IXTY05N100 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC PACKAGE-3 局域网 开关 脉冲 晶体管 |
| 文件： | 总5页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VDSS = 1000V
ID25 = 750mA
RDS(on) 17
IXTU05N100
IXTY05N100
High Voltage
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
TO-251
G
D
Symbol
VDSS
Test Conditions
Maximum Ratings
D (TAB)
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
1000
1000
V
V
S
VDGR
VGSS
VGSM
Continuous
Transient
30
40
V
V
TO-252
ID25
IDM
TC = 25C
TC = 25C, Pulse Width Limited by TJM
750
3
mA
A
G
S
IA
TC = 25C
TC = 25C
1
100
3
A
mJ
D (TAB)
EAS
dv/dt
IS IDM, VDD VDSS, TJ 150C
V/ns
G = Gate
D
= Drain
S = Source
TAB = Drain
PD
TC = 25C
40
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
C
C
C
Features
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
International Standard Packages
Fast Switching Times
Avalanche Rated
Rds(on) HDMOSTM Process
Rugged Polysilicon Gate Cell structure
Extended FBSOA
FC
Mounting force
1.13 / 10
Nm/lb.in.
Weight
TO-251
TO-252
0.40
0.35
g
g
Advantages
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
1000
2.5
Typ.
Max.
High Power Density
Space Savings
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VGS = 30V, VDS = 0V
VDS = VDSS, VGS = 0V
V
4.5
V
Applications
100 nA
Switch-Mode and Resonant-Mode
Power Supplies
Flyback Inverters
DC Choppers
IDSS
25 A
500 A
TJ = 125C
RDS(on)
VGS = 10V, ID = 375mA, Note 1
17
DS100102A(5/14)
© 2014 IXYS CORPORATION, All Rights Reserved
IXTU05N100
IXTY05N100
Symbol
Test Conditions
Characteristic Values
TO-251 (IXTU) Outline
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 500mA, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
0.55
0.93
S
Ciss
Coss
Crss
260
22
8
pF
pF
pF
td(on)
tr
td(off)
tf
11
19
40
28
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 1A
RG = 47 (External)
1. Gate
3. Source
2.Drain
4.Drain
Qg(on)
Qgs
7.8
1.4
4.1
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 1A
Dim.
Millimeter
Min.
Inches
Min. Max.
Max.
Qgd
A
A1
2.19
0.89
2.38
1.14
.086
0.35
.094
.045
RthJC
RthCA
3.1C/W
110C/W
b
b1
b2
0.64
0.76
5.21
0.89
1.14
5.46
.025
.030
.205
.035
.045
.215
c
c1
0.46
0.46
0.58
0.58
.018
.018
.023
.023
D
5.97
6.22
.235
.250
.090 BSC
.180 BSC
.245
.265
E
e
e1
6.35
2.28
4.57
6.73
BSC
BSC
Source-Drain Diode
H
17.02
17.78
.670
.700
Symbol
Test Conditions
Characteristic Values
L
L1
L2
8.89
1.91
0.89
9.65
2.28
1.27
.350
.075
.035
.380
.090
.050
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
750 mA
ISM
VSD
trr
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
3
A
V
1.5
TO-252 (IXTY) Outline
IF = IS, -di/dt = 100A/s
710
ns
VR = 100V, VGS = 0V
Note 1: Pulse test, t 300s, duty cycle, d 2%.
Pins: 1 - Gate
3 - Source
2,4 - Drain
Dim. Millimeter
Min. Max.
Inches
Min.
Max.
A
A1
2.19 2.38
0.89 1.14
0.086
0.035
0.094
0.045
A2
b
0
0.13
0
0.005
0.035
0.64 0.89
0.025
b1
b2
0.76 1.14
5.21 5.46
0.030
0.205
0.045
0.215
c
c1
0.46 0.58
0.46 0.58
0.018
0.018
0.023
0.023
D
D1
5.97 6.22
4.32 5.21
0.235
0.170
0.245
0.205
E
E1
6.35 6.73
4.32 5.21
0.250
0.170
0.265
0.205
e
e1
2.28 BSC
4.57 BSC
0.090 BSC
0.180 BSC
H
L
9.40 10.42
0.51 1.02
0.370
0.020
0.410
0.040
L1
L2
L3
0.64 1.02
0.89 1.27
2.54 2.92
0.025
0.035
0.100
0.040
0.050
0.115
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTU05N100
IXTY05N100
Fig. 2. Output Characteristics @ TJ = 125ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
= 10V
GS
V
= 10V
8V
GS
7V
6V
7V
5.5V
6V
5.5V
5V
5V
4.5V
0
5
10
15
20
25
30
0
5
10
15
20
25
30
VDS - Volts
VDS - Volts
Fig. 3. RDS(on) Normalized to ID = 375mA Value vs.
Junction Temperature
Fig. 4. RDS(on) Normalized to ID = 375mA Value vs.
Drain Current
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
V
= 10V
GS
V
= 10V
GS
T
J
= 125ºC
I
= 750mA
D
I
= 375mA
D
T
J
= 25ºC
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
ID - Amperes
TJ - Degrees Centigrade
Fig. 5. Maximum Drain Current vs.
Case Temperature
Fig. 6. Input Admittance
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
T
J
= 125ºC
25ºC
- 40ºC
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
-50
-25
0
25
50
75
100
125
150
TC - Degrees Centigrade
VGS - Volts
© 2014 IXYS CORPORATION, All Rights Reserved
IXTU05N100
IXTY05N100
Fig. 7. Transconductance
Fig. 8. Forward Voltage Drop of Intrinsic Diode
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.4
2.0
1.6
1.2
0.8
0.4
0.0
T
= - 40ºC
J
25ºC
125ºC
T
= 125ºC
J
T
= 25ºC
0.85
J
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.4
0.45
0.5
0.55
0.6
0.65
0.7
0.75
0.8
0.9
ID - Amperes
VSD - Volts
Fig. 9. Gate Charge
Fig. 10. Capacitance
10
9
8
7
6
5
4
3
2
1
0
1,000
100
10
V
= 500V
f
= 1 MHz
DS
I
I
= 1A
D
G
= 1mA
C
iss
C
oss
C
rss
1
0
5
10
15
20
25
30
35
40
0
1
2
3
4
5
6
7
8
QG - NanoCoulombs
VDS - Volts
Fig. 12. Forward-Bias Safe Operating Area @ TC = 75ºC
Fig. 11. Forward-Bias Safe Operating Area @ TC = 25ºC
10
10
DS(on)
R
Limit
DS(on)
R
Limit
25µs
100µs
1ms
1
1
100µs
1ms
0.1
0.01
0.1
0.01
10ms
10ms
100ms
J
J
T
= 150ºC
= 25ºC
T
= 150ºC
C
= 75ºC
DC
C
T
T
100ms
Single Pulse
Single Pulse
DC
10
100
1,000
10
100
1,000
VCE - Volts
VCE - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTU05N100
IXTY05N100
Fig. 13. Maximum Transient Thermal Impedance
10
1
0.1
0.0001
0.001
0.01
0.1
1
Pulse Width - Second
IXYS REF: T_05N100(1T) 5-13-14-A
© 2014 IXYS CORPORATION, All Rights Reserved
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