IXTY08N100P-TRL [LITTELFUSE]
Power Field-Effect Transistor,;
| 型号： | IXTY08N100P-TRL |
| 厂家： | 
LITTELFUSE |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总6页 (文件大小：257K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarTM
Power MOSFET
IXTY08N100P
IXTA08N100P
IXTP08N100P
VDSS = 1000V
ID25 = 0.8A
RDS(on) 20
N-Channel Enhancement Mode
Avalanche Rated
TO-252 (IXTY)
G
S
D (Tab)
TO-263 (IXTA)
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25C to 150C
1000
1000
V
V
G
S
VDGR
TJ = 25C to 150C, RGS = 1M
VGSS
VGSM
Continuous
Transient
20
30
V
V
D (Tab)
TO-220 (IXTP)
ID25
IDM
TC = 25C
0.8
1.5
A
A
TC = 25C, Pulse Width Limited by TJM
IA
TC = 25C
TC = 25C
0.8
80
A
G
D
D (Tab)
EAS
mJ
S
dv/dt
PD
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
10
42
V/ns
W
G = Gate
S = Source
D
= Drain
Tab = Drain
TJ
-55 ... +150
150
C
C
C
TJM
Tstg
-55 ... +150
Features
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
International Standard Packages
Low QG
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
FC
Md
Mounting Force (TO-263)
Mounting Torque (TO-220)
10..65 / 2.2..14.6
1.13 / 10
N/lb
Nm/lb.in
Weight
TO-252
TO-263
TO-220
0.35
2.50
3.00
g
g
g
Advantages
High Power Density
Easy to Mount
Space Savings
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
Applications
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250μA
VDS = VGS, ID = 50μA
VGS = 20V, VDS = 0V
VDS = VDSS, VGS = 0V
1000
V
V
2.0
4.0
DC-DC Converters
Switch-Mode and Resonant-Mode
50 nA
A
Power Supplies
AC and DC Motor Drives
IDSS
3
Lasers Driverserators
TJ = 125C
100 A
Robotics and Servo Controls
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
17
20
DS99865D(8/17)
© 2017 IXYS CORPORATION, All Rights Reserved
IXTY08N100P IXTA08N100P
IXTP08N100P
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
gfs
VDS = 30V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
0.35
0.60
S
Ciss
Coss
Crss
240
18
pF
pF
pF
3.6
Qg(on)
Qgs
11.3
1.7
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
6.7
td(on)
tr
td(off)
tf
19
37
35
34
ns
ns
ns
ns
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 50 (External)
RthJC
RthCS
3.0 C/W
C/W
TO-220
0.50
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
IS
VGS = 0V
0.8
A
A
ISM
VSD
trr
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
2.4
1.5
V
IF = 0.8A, -di/dt = 100A/μs, VR = 100V
750
ns
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537
IXTY08N100P IXTA08N100P
IXTP08N100P
Fig. 2. Extended Output Characteristics @ TJ = 25oC
Fig. 1. Output Characteristics @ TJ = 25oC
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
V
= 10V
7V
GS
V
= 10V
7V
GS
6V
6V
5V
5V
12
0
2
4
6
8
10
14
16
18
0
5
10
15
20
25
30
35
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 0.4A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125oC
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
V
= 10V
7V
GS
V
= 10V
GS
6V
I
= 0.8A
D
I
= 0.4A
D
5V
0
5
10
15
20
25
30
35
40
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 0.4A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs. Case Temperature
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
V
= 10V
GS
T = 125oC
J
T = 25oC
J
-50
-25
0
25
50
75
100
125
150
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
TC - Degrees Centigrade
ID - Amperes
© 2017 IXYS CORPORATION, All Rights Reserved
IXTY08N100P IXTA08N100P
IXTP08N100P
Fig. 7. Input Admittance
Fig. 8. Transconductance
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
T
= - 40oC
J
V
= 30V
DS
V
= 30V
DS
25oC
T
J
= 125oC
25oC
- 40oC
125oC
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
2.4
2.0
1.6
1.2
0.8
0.4
0.0
10
9
8
7
6
5
4
3
2
1
0
V
= 500V
DS
I
I
= 0.4A
D
G
= 1mA
T
J
= 125oC
T
J
= 25oC
0.4
0.5
0.6
0.7
0.8
0.9
0
1
2
3
4
5
6
7
8
9
10
11
12
VSD - Volts
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal Impedance
Fig. 11. Capacitance
10
1,000
100
10
f
= 1MHz
C
iss
1
C
C
oss
rss
0.1
1
0.0001
0.001
0.01
0.1
1
10
0
5
10
15
20
25
30
35
40
Pulse Width - Seconds
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY08N100P IXTA08N100P
IXTP08N100P
TO-252 AA Outline
TO-263 Outline
TO-220 Outline
A
A
E
b3
A
C2
E
E1
4
c2
L3
E
oP
A1
4
L1
D1
D
H1
A1
A2
Q
L2
H
H
A1
L4
1
3
2
1
2
3
D2
E1
D
L1
b2
L
c
b2
b
L3
c
D1
1 - Gate
2,4 - Drain
3 - Source
e
e
e
e1
0.43 [11.0]
L2
e1
0
0
A2
5.55MIN
OPTIONAL
EJECTOR
PIN
0.34 [8.7]
L1
0.66 [16.6]
A2
L
6.50MIN
4
1 - Gate
2,4 - Drain
3 - Source
0.20 [5.0]
0.10 [2.5]
0.12 [3.0]
0.06 [1.6]
6.40
2.28
3X b
3X b2
e
c
2.85MIN
1.25MIN
e1
BOTTOM
VIEW
1 - Gate
2,4 - Drain
3 - Source
LAND PATTERN RECOMMENDATION
© 2017 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_08N100P(1A-444) 4-02-08
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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