IXTY12N06T [LITTELFUSE]

Power Field-Effect Transistor,;


型号：	IXTY12N06T
厂家：	LITTELFUSE
描述：	Power Field-Effect Transistor, 局域网开关脉冲晶体管
文件：	总6页 (文件大小：164K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Preliminary Technical Information

TrenchMV^TM

Power MOSFET

V_DSS= 60V

I_D25= 12A

R_DS(on)≤ 85mΩ

IXTU12N06T

IXTY12N06T

N-Channel Enhancement Mode

Avalanche Rated

TO-251 (IXTU)

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 175°C

T_J= 25°C to 175°C, R_GS= 1MΩ

D (TAB)

TO-252 (IXTY)

V_GSM

Transient

±20

I_D25

I_DM

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

Package Current Limit, RMS TO-252

I_LRMS

I_AR

T_C= 25°C

E_AS

D (TAB)

P_D

T_C= 25°C

G = Gate

S = Source

D = Drain

TAB = Drain

T_J

-55 ... +175

175

°C

T_JM

T_stg

-55 ... +175

Features

T_L

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10s

300

260

°C

T_SOLD

^zUltra-low On Resistance

^zUnclamped Inductive Switching (UIS)

rated

^zLow package inductance

- easy to drive and to protect

^z175 °C Operating Temperature

M_d

Mounting torque

1.13/10

Nm/lb.in.

Weight

TO-251

TO-252

0.40

0.35

Advantages

Easy to mount

Space savings

High power density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C unless otherwise specified)

Min.

Typ. Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 25μA

V_GS= ± 20V, V_DS= 0V

Applications

2.0

4.0

Automotive

± 50 nA

μA

100 μA

- Motor Drives

- 42V Power Bus

I_DSS

V_DS= V_DSS

V_GS= 0V

- ABS Systems

T_J= 150°C

DC/DC Converters and Off-line UPS

Primary Switch for 24V and 48V

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Notes 1, 2

85 mΩ

Systems

High Current Switching

Applications

DS99947(4/08)

IXTU12N06T

IXTY12N06T

Symbol

Test Conditions

Characteristic Values

TO-251 (IXTU) Outline

(T_J= 25°C, unless otherwise specified)

Min.

Typ.

Max.

g_fs

V_DS= 10V, I_D= 0.5 • I_D25, Notes 1

V_GS= 0V, V_DS= 25V, f = 1MHz

2.9

4.7

C_iss

C_oss

C_rss

256

10.4

t_d(on)

t_r

t_d(off)

t_f

Resistive Switching Times

_GS= 10V, V_DS= 0.5 • V_DSS, I_D= 6A

R_G= 50Ω (External)

Q_g(on)

Q_gs

Q_gd

3.4

1.0

0.9

V_GS= 10V, V_DS= 0.5 • V_DSS, I_D= 6A

1. Gate

3. Source

2.Drain

4. Drain

Dim.

Millimeter

Inches

Min. Max.

R_thJC

4.5 °C/W

Min.

Max.

2.19

0.89

2.38

1.14

.086

0.35

.094

.045

0.64

0.76

5.21

0.89

1.14

5.46

.025

.030

.205

.035

.045

.215

Source-Drain Diode

Characteristic Values

0.46

0.58

.018

.023

Symbol

Test Conditions

(T_J= 25°C, unless otherwise specified)

Min.

Typ.

Max.

5.97

6.22

.235

.250

.090 BSC

.180 BSC

.245

.265

6.35

2.28

4.57

6.73

BSC

I_S

V_GS= 0V

I_SM

V_SD

Repetitive, pulse width limited by T_JM

I_F= 6A, V_GS= 0V, Note 1

17.02

17.78

.670

.700

8.89

1.91

0.89

9.65

2.28

1.27

.350

.075

.035

.380

.090

.050

1.2

I_F= 6A, V_GS= 0V, -di/dt = 100A/μs

V_R= 30V

t_rr

TO-252 (IXTY) Outline

I_RM

1.34

Notes: 1. Pulse test: t ≤ 300μs; duty cycle, d ≤ 2%.

2. On through-hole packages, R_DS(on)Kelvin test contact location must be

5mm or less from the package body.

Pins: 1 - Gate

3 - Source

2,4 - Drain

Dim. Millimeter

Min. Max.

Inches

Min.

Max.

2.19 2.38

0.89 1.14

0.086

0.035

0.094

0.045

0.13

0.005

0.035

0.64 0.89

0.025

0.76 1.14

5.21 5.46

0.030

0.205

0.045

0.215

PRELIMINARY TECHNICAL INFORMATION

0.46 0.58

0.018

0.023

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

5.97 6.22

4.32 5.21

0.235

0.170

0.245

0.205

6.35 6.73

4.32 5.21

0.250

0.170

0.265

0.205

2.28 BSC

4.57 BSC

0.090 BSC

0.180 BSC

9.40 10.42

0.51 1.02

0.370

0.020

0.410

0.040

0.64 1.02

0.89 1.27

2.54 2.92

0.025

0.035

0.100

0.040

0.050

0.115

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered

by one or more of the following U.S. patents: 4,850,072 5,017,508

4,881,106 5,034,796

4,835,592 4,931,844

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123 B1

6,306,728 B1

6,404,065 B1 6,683,344

6,534,343

6,583,505

6,727,585

6,710,405 B2 6,759,692

6,710,463

7,005,734 B2 7,157,338B2

7,063,975 B2

6,771,478 B2 7,071,537

IXTU12N06T

IXTY12N06T

Fig. 1. Output Characteristics

@ 25ºC

Fig. 2. Extended Output Characteristics

@ 25ºC

V_GS= 10V

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

175

V_DS- Volts

Fig. 4. R_DS(on)Normalized to I_D= 6A Value

vs. Junction Temperature

Fig. 3. Output Characteristics

@ 150ºC

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

V_GS= 10V

I _D= 12A

I _D= 6A

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

-50

-25

100

125

150

T_J- Degrees Centigrade

V_DS- Volts

Fig. 5. R_DS(on)Normalized to I_D= 6A Value

vs. Drain Current

Fig. 6. Drain Current vs. Case Temperature

3.5

3.0

2.5

2.0

1.5

1.0

0.5

V_GS= 10V

T_J= 175ºC

15V

- - - -

T_J= 25ºC

-50

-25

100

125

150

I_D- Amperes

T_C- Degrees Centigrade

IXTU12N06T

IXTY12N06T

Fig. 8. Transconductance

Fig. 7. Input Admittance

T_J= - 40ºC

25ºC

150ºC

T_J= 150ºC

25ºC

- 40ºC

3.5

3.0

0.4

3.5

4.0

4.5

5.0

5.5

6.0

6.5

1.4

V_GS- Volts

I_D- Amperes

Fig. 9. Forward Voltage Drop of

Intrinsic Diode

Fig. 10. Gate Charge

V_DS= 30V

I _D= 6A

_G= 10mA

T_J= 150ºC

T_J= 25ºC

0.5

1.5

2.5

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

Q_G- NanoCoulombs

V_SD- Volts

Fig. 12. Maximum Transient Thermal

Impedance

Fig. 11. Capacitance

1,000

10.0

iss

100

1.0

oss

rss

= 1 MHz

0.1

0.00001

0.0001

0.001

0.01

0.1

V_DS- Volts

IXYS reserves the right to change limits, test conditions, and dimensions.

Pulse Width - Second

IXTU12N06T

IXTY12N06T

Fig. 13. Resistive Turn-on

Rise Time vs. Junction Temperature

Fig. 14. Resistive Turn-on

Rise Time vs. Drain Current

R_G= 50Ω

V_GS= 10V

V_DS= 30V

T_J= 25ºC

R_G= 50Ω

V_GS= 10V

_DS= 30V

I _D= 12A

I _D= 6A

T_J= 125ºC

105 115 125

T_J- Degrees Centigrade

I_D- Amperes

Fig. 15. Resistive Turn-on

Switching Times vs. Gate Resistance

Fig. 16. Resistive Turn-off

Switching Times vs. Junction Temperature

t_f

t _d(off)- - - -

t_r

t_d(on)- - - -

T_J= 125ºC, V_GS= 10V

V_DS= 30V

R_G= 50Ω, V_GS= 10V

V_DS= 30V

I _D= 6A

I _D= 12A

I _D= 6A

I _D= 6A, 12A

I _D= 12A

100

110

120

95 105 115 125

R_G- Ohms

T_J- Degrees Centigrade

Fig. 18. Resistive Turn-off

Switching Times vs. Gate Resistance

Fig. 17. Resistive Turn-off

Switching Times vs. Drain Current

t _f

T_J= 125ºC, V_GS= 10V

_d(off)- - - -

V_DS= 30V

I _D= 6A

T_J= 25ºC

T_J= 125ºC

t _f

R_G= 50Ω, V_GS= 10V

_d(off)- - - -

I _D= 12A

V_DS= 30V

100

110

120

R_G- Ohms

I_D- Amperes

IXYS REF: T_12N06T(U1) 4-03-08-A

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently

evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,

and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

IXTY12N06T [LITTELFUSE]

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