IXTY12N06T [IXYS]
Power Field-Effect Transistor, 12A I(D), 60V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB, TO-253, 3 PIN;型号: | IXTY12N06T |
厂家: | IXYS CORPORATION |
描述: | Power Field-Effect Transistor, 12A I(D), 60V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB, TO-253, 3 PIN 局域网 开关 脉冲 晶体管 |
文件: | 总5页 (文件大小:163K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Preliminary Technical Information
TrenchMVTM
Power MOSFET
VDSS = 60V
ID25 = 12A
RDS(on) ≤ 85mΩ
IXTU12N06T
IXTY12N06T
N-Channel Enhancement Mode
Avalanche Rated
TO-251 (IXTU)
Symbol
Test Conditions
Maximum Ratings
G
D
VDSS
VDGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
60
60
V
V
D (TAB)
S
TO-252 (IXTY)
G
VGSM
Transient
±20
V
ID25
IDM
TC = 25°C
TC = 25°C, pulse width limited by TJM
Package Current Limit, RMS TO-252
12
30
25
A
A
A
ILRMS
IAR
TC = 25°C
TC = 25°C
3
A
S
EAS
20
mJ
D (TAB)
PD
TC = 25°C
33
W
G = Gate
S = Source
D = Drain
TAB = Drain
TJ
-55 ... +175
175
°C
°C
°C
TJM
Tstg
-55 ... +175
Features
TL
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10s
300
260
°C
°C
TSOLD
z Ultra-low On Resistance
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
z 175 °C Operating Temperature
Md
Mounting torque
1.13/10
Nm/lb.in.
Weight
TO-251
TO-252
0.40
0.35
g
g
Advantages
z
Easy to mount
Space savings
High power density
z
Symbol
Test Conditions
Characteristic Values
z
(TJ = 25°C unless otherwise specified)
Min.
Typ. Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250μA
VDS = VGS, ID = 25μA
VGS = ± 20V, VDS = 0V
60
V
V
Applications
2.0
4.0
z
Automotive
± 50 nA
μA
100 μA
- Motor Drives
- 42V Power Bus
IDSS
VDS = VDSS
VGS = 0V
1
- ABS Systems
TJ = 150°C
z
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2
85 mΩ
z
Systems
High Current Switching
z
Applications
DS99947(4/08)
2008 IXYS CORPORATION All rights reserved
IXTU12N06T
IXTY12N06T
Symbol
Test Conditions
Characteristic Values
TO-251 (IXTU) Outline
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS = 10V, ID = 0.5 • ID25, Notes 1
VGS = 0V, VDS = 25V, f = 1MHz
2.9
4.7
S
Ciss
Coss
Crss
256
46
pF
pF
pF
10.4
td(on)
tr
td(off)
tf
12
29
29
18
ns
ns
ns
ns
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 6A
RG = 50Ω (External)
Qg(on)
Qgs
Qgd
3.4
1.0
0.9
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 6A
1. Gate
3. Source
2.Drain
4. Drain
Dim.
Millimeter
Inches
Min. Max.
RthJC
4.5 °C/W
Min.
Max.
A
A1
2.19
0.89
2.38
1.14
.086
0.35
.094
.045
b
b1
b2
0.64
0.76
5.21
0.89
1.14
5.46
.025
.030
.205
.035
.045
.215
Source-Drain Diode
Characteristic Values
c
c1
0.46
0.46
0.58
0.58
.018
.018
.023
.023
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
12
D
5.97
6.22
.235
.250
.090 BSC
.180 BSC
.245
.265
E
e
e1
6.35
2.28
4.57
6.73
BSC
BSC
IS
VGS = 0V
A
A
V
ISM
VSD
Repetitive, pulse width limited by TJM
IF = 6A, VGS = 0V, Note 1
48
H
17.02
17.78
.670
.700
L
L1
L2
8.89
1.91
0.89
9.65
2.28
1.27
.350
.075
.035
.380
.090
.050
1.2
IF = 6A, VGS = 0V, -di/dt = 100A/μs
VR = 30V
trr
30
ns
A
TO-252 (IXTY) Outline
IRM
1.34
Notes: 1. Pulse test: t ≤ 300μs; duty cycle, d ≤ 2%.
2. On through-hole packages, RDS(on) Kelvin test contact location must be
5mm or less from the package body.
Pins: 1 - Gate
3 - Source
2,4 - Drain
Dim. Millimeter
Min. Max.
Inches
Min.
Max.
A
A1
2.19 2.38
0.89 1.14
0.086
0.035
0.094
0.045
A2
b
0
0.13
0
0.005
0.035
0.64 0.89
0.025
b1
b2
0.76 1.14
5.21 5.46
0.030
0.205
0.045
0.215
PRELIMINARY TECHNICAL INFORMATION
c
c1
0.46 0.58
0.46 0.58
0.018
0.018
0.023
0.023
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
D
D1
5.97 6.22
4.32 5.21
0.235
0.170
0.245
0.205
E
E1
6.35 6.73
4.32 5.21
0.250
0.170
0.265
0.205
e
e1
2.28 BSC
4.57 BSC
0.090 BSC
0.180 BSC
H
L
9.40 10.42
0.51 1.02
0.370
0.020
0.410
0.040
L1
L2
L3
0.64 1.02
0.89 1.27
2.54 2.92
0.025
0.035
0.100
0.040
0.050
0.115
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTU12N06T
IXTY12N06T
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
12
11
10
9
32
28
24
20
16
12
8
VGS = 10V
VGS = 10V
9V
8V
9V
8
8V
7V
7V
7
6
6V
5V
5
4
6V
5V
3
2
4
1
0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0
2
4
6
8
10
12
14
16
18
175
175
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 6A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 150ºC
12
11
10
9
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
VGS = 10V
VGS = 10V
9V
8V
I D = 12A
8
7V
7
I D = 6A
6
6V
5V
5
4
3
2
1
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 6A Value
vs. Drain Current
Fig. 6. Drain Current vs. Case Temperature
13
12
11
10
9
3.5
3.0
2.5
2.0
1.5
1.0
0.5
VGS = 10V
TJ = 175ºC
15V
- - - -
8
7
6
5
4
3
2
TJ = 25ºC
1
0
-50
-25
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
ID - Amperes
TC - Degrees Centigrade
2008 IXYS CORPORATION All rights reserved
IXTU12N06T
IXTY12N06T
Fig. 8. Transconductance
Fig. 7. Input Admittance
10
9
8
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
TJ = - 40ºC
25ºC
150ºC
TJ = 150ºC
25ºC
- 40ºC
0
1
2
3
4
5
6
7
8
9
10
3.5
1
3.0
0.4
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
1.4
40
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
30
25
20
15
10
5
VDS = 30V
I D = 6A
I
G = 10mA
TJ = 150ºC
TJ = 25ºC
0
0
0.5
1
1.5
2
2.5
3
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
QG - NanoCoulombs
VSD - Volts
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
1,000
10.0
C
iss
100
10
1
1.0
C
C
oss
rss
= 1 MHz
5
f
0.1
0.00001
0.0001
0.001
0.01
0.1
10
15
20
25
30
35
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
Pulse Width - Second
IXTU12N06T
IXTY12N06T
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
34
32
30
28
26
24
22
20
18
16
14
12
34
32
30
28
26
24
22
20
18
16
14
12
RG = 50Ω
VGS = 10V
VDS = 30V
TJ = 25ºC
RG = 50Ω
VGS = 10V
DS = 30V
V
I D = 12A
I D = 6A
TJ = 125ºC
25
35
45
55
65
75
85
95
105 115 125
6
7
8
9
10
11
12
TJ - Degrees Centigrade
ID - Amperes
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
32
21
20
19
18
17
16
15
14
13
12
11
10
22
36
34
32
30
28
26
24
22
20
18
16
tf
t d(off) - - - -
30
28
26
24
22
20
18
16
14
12
10
tr
td(on) - - - -
TJ = 125ºC, VGS = 10V
VDS = 30V
RG = 50Ω, VGS = 10V
21
20
19
18
17
VDS = 30V
I D = 6A
I D = 12A
I D = 6A
I D = 6A, 12A
I D = 12A
50
60
70
80
90
100
110
120
25
35
45
55
65
75
85
95 105 115 125
RG - Ohms
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
45
40
35
30
25
20
15
10
44
40
36
32
28
24
20
16
21
20
19
18
17
32
30
28
26
24
22
20
18
16
t f
TJ = 125ºC, VGS = 10V
t
d(off) - - - -
VDS = 30V
I D = 6A
TJ = 25ºC
TJ = 125ºC
t f
RG = 50Ω, VGS = 10V
t
d(off) - - - -
I D = 12A
VDS = 30V
50
60
70
80
90
100
110
120
6
7
8
9
10
11
12
RG - Ohms
ID - Amperes
2008 IXYS CORPORATION All rights reserved
IXYS REF: T_12N06T(U1) 4-03-08-A
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