IXTY01N80 [IXYS]
High Voltage MOSFET; 高电压的MOSFET
| 型号： | IXTY01N80 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | High Voltage MOSFET |
| 文件： | 总2页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IXTU 01N80
IXTY 01N80
VDSS
ID25
= 800 V
= 100mA
High Voltage MOSFET
N-Channel, Enhancement Mode
RDS(on) = 50 Ω
Preliminary data sheet
Symbol
TestConditions
Maximum Ratings
01N100
TO-251 AA
VDSS
VDGR
TJ = 25°C to 150°C
800
800
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ
G
VGS
Continuous
Transient
20
30
V
D
D (TAB)
S
VGSM
V
ID25
IDM
TC = 25°C; TJ = 25°C to 150°C
100
400
mA
mA
TC = 25°C, pulse width limited by max. TJ
PD
TC = 25°C
25
W
TJ
-55 ... +150
150
°C
°C
°C
TO-252 AA
TJM
Tstg
-55 ... +150
G
S
TL
1.6 mm (0.063 in) from case for 5 s
300
0.8
°C
g
Weight
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
Symbol
VDSS
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
l Internationalstandardpackages
JEDEC TO-251 AA, TO-252 AA
l Low RDS (on) HDMOSTM process
min. typ. max.
VGS = 0 V, ID = 25 µA
800
2
V
V
l Rugged polysilicon gate cell structure
l Fastswitchingtimes
VGS(th)
IGSS
VDS = VGS, ID = 25 µA
4.
5
V
Applications
VGS = 20 VDC, VDS = 0
50 nA
l
IDSS
VDS = 0.8 VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
10 µA
200 µA
Levelshifting
Triggers
l
l
l
RDS(on)
VGS = 10 V, ID = ID25
Pulse test, t ≤ 300 ms, duty cycle d ≤ 2 %
50
Ω
Solid state relays
Current regulators
© 2001 IXYS All rights reserved
98841 (5/01)
IXTU 01N80
IXTY 01N80
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-251 AA Outline
VDS = 10 V; ID = 0.5 ID25, pulse test
140
mS
Ciss
Coss
Crss
60
8.0
2.0
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
12
12
28
28
ns
ns
ns
ns
1. Gate
2. Drain
3. Source
4. Drain
VGS = 10 V, VDS = 500 V, ID = ID25
Back heatsink
RG = 50 Ω (External)
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
2.19
0.89
2.38
1.14
.086
0.35
.094
.045
Qg(on)
Qgs
8
1.8
3
nC
nC
nC
A1
b
0.64
0.76
5.21
0.89
1.14
5.46
.025
.030
.205
.035
.045
.215
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
b1
b2
Qgd
c
0.46
0.46
0.58
0.58
.018
.018
.023
.023
c1
RthJC
3
K/W
D
5.97
6.22
.235
.245
E
6.35
2.28
4.57
6.73
BSC
BSC
.250
.090
.180
.265
BSC
BSC
e
e1
H
17.02
17.78
.670
.700
L
8.89
1.91
0.89
1.15
9.65
2.28
1.27
1.52
.350
.075
.035
.045
.380
.090
.050
.060
L1
L2
L3
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-252 AA
Symbol
VSD
TestConditions
IF = 100 mA, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
trr
IF = 0.75 A, -di/dt = 10 A/µs,
VDS = 25 V
1.5 µs
1Anode
2 NC
3Anode
4 Cathode
Dim.
A
Millimeter
Min. Max. Min.
Inches
Max.
2.19 2.38 0.086 0.094
A1 0.89 1.14 0.035 0.045
A2
b
0
0.13
0
0.64 0.89 0.025 0.035
0.005
b1
b2
0.76 1.14 0.030 0.045
5.21 5.46 0.205 0.215
c
c1
0.46 0.58 0.018 0.023
0.46 0.58 0.018 0.023
D
D1
5.97 6.22 0.235 0.245
4.32 5.21 0.170 0.205
E
E1
6.35 6.73 0.250 0.265
4.32 5.21 0.170 0.205
e
e1
2.28 BSC
4.57 BSC
0.090BSC
0.180BSC
H
L
9.40 10.42 0.370 0.410
0.51 1.02 0.020 0.040
L1
L2
L3
0.64 1.02 0.025 0.040
0.89 1.27 0.035 0.050
2.54 2.92 0.100 0.115
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
相关型号：
IXTY05N100
Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC PACKAGE-3
IXYS
IXTY10P15T
Power Field-Effect Transistor, 10A I(D), 150V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252, 3 PIN
IXYS
IXTY12N06T
Power Field-Effect Transistor, 12A I(D), 60V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB, TO-253, 3 PIN
IXYS
©2020 ICPDF网 联系我们和版权申明