IXTP220N055T [IXYS]
Preliminary Technical Information TrenchMVTM Power MOSFET; 初步的技术资料TrenchMVTM功率MOSFET
| 型号： | IXTP220N055T |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Preliminary Technical Information TrenchMVTM Power MOSFET |
| 文件： | 总5页 (文件大小：220K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
TrenchMVTM
Power MOSFET
IXTA220N055T
IXTP220N055T
VDSS = 55
ID25 = 220
RDS(on) ≤ 4.0 mΩ
V
A
N-ChannelEnhancementMode
AvalancheRated
Symbol
Test Conditions
Maximum Ratings
TO-263 (IXTA)
VDSS
VDGR
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 MΩ
55
55
V
V
G
S
VGSM
Transient
20
V
(TAB)
ID25
ILRMS
IDM
TC = 25° C
Lead Current Limit, RMS
TC = 25° C, pulse width limited by TJM
220
75
600
A
A
A
TO-220 (IXTP)
IAR
EAS
TC =25°C
TC = 25° C
25
1.0
A
J
dv/dt
PD
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS
TJ ≤175° C, RG = 5 Ω
3
V/ns
G
(TAB)
D
S
TC =25°C
430
W
G = Gate
S = Source
D = Drain
TAB = Drain
TJ
TJM
Tstg
-55 ... +175
175
-55 ... +175
°C
°C
°C
Features
ꢀUltra-low On Resistance
ꢀUnclamped Inductive Switching (UIS)
rated
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
300
260
°C
°C
ꢀLow package inductance
- easy to drive and to protect
ꢀ175 ° C Operating Temperature
Md
Mounting torque (TO-220)
1.13 / 10 Nm/lb.in.
Weight
TO-263
TO-220
2.5
3.0
g
g
Advantages
ꢀ
Easy to mount
Space savings
High power density
ꢀ
ꢀ
Symbol
Test Conditions
Characteristic Values
Applications
Automotive
- Motor Drives
- High Side Switch
- 12VBattery
(TJ = 25° C unless otherwise specified)
Min. Typ.
Max.
ꢀ
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
55
V
V
2.0
4.0
- ABS Systems
VGS
=
20 V, VDS = 0 V
200
nA
ꢀ
DC/DC Converters and Off-line UPS
Primary- Side Switch
High Current Switching
IDSS
VDS = VDSS
VGS = 0 V
5
250
µA
µA
ꢀ
TJ = 150° C
ꢀ
Applications
RDS(on)
VGS = 10 V, ID = 25, Notes 1, 2
3.4
4.0 m Ω
DS99517 (11/06)
© 2006 IXYS CORPORATION All rights reserved
IXTA220N055T
IXTP220N055T
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
TO-263 (IXTA) Outline
(TJ = 25° C unless otherwise specified)
gfs
VDS= 10 V; ID = 60 A, Note 1
75
120
S
Ciss
Coss
Crss
7200
1270
285
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10 V, VDS = 30 V, ID = 25 A
RG = 5 Ω (External)
36
62
53
53
ns
ns
ns
ns
Pins: 1 - Gate
2 - Drain
3 - Source 4, TAB - Drain
Qg(on)
Qgs
158
42
nC
nC
nC
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
Qgd
46
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
RthJC
RthCH
0.35 ° C/W
°C/W
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
TO-220
0.50
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
Source-Drain Diode
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100
.405
.320
BSC
Symbol
Test Conditions
Characteristic Values
L
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
TJ = 25° C unless otherwise specified)
Min. Typ.
Max.
L1
L2
L3
L4
IS
VGS = 0 V
220
A
A
ISM
VSD
trr
Pulse width limited by TJM
IF = 25 A, VGS = 0 V, Note 1
600
1.0
R
0.46
0.74
.018
.029
V
TO-220 (IXTP) Outline
IF = 25 A, -di/dt = 100 A/µs
70
ns
VR = 25 V, VGS = 0 V
Notes: 1. Pulse test, t ≤300 µs, duty cycle d ≤ 2 %;
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5 mm or less from the package body.
Pins: 1 - Gate
2 - Drain
3 - Source 4, TAB - Drain
PRELIMINARYTECHNICALINFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
oneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728 B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478B2
7,005,734B2
7,063,975B2
7,071,537
IXTA220N055T
IXTP220N055T
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
220
200
180
160
140
120
100
80
320
280
240
200
160
120
80
V
= 10V
V
= 10V
GS
GS
9V
8V
9V
8V
7V
6V
7V
6V
60
40
40
20
5V
5V
1
0
0
0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
0.5
1.5
2
2.5
3
3.5
4
4.5
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 110A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 150ºC
200
180
160
140
120
100
80
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 10V
GS
V
= 10V
GS
9V
8V
7V
I
= 220A
D
6V
I
= 110A
D
5V
60
40
20
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
-25
0
25
50
75
100
125
150
175
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 110A Value
vs. Drain Current
Fig. 6. Drain Current vs. Case Temperature
2.2
2
140
120
100
80
External Lead Current Limit for TO-263 (7-Lead)
T = 175ºC
J
1.8
1.6
1.4
1.2
1
External Lead Current Limit for TO-3P, TO-220, & TO-263
V
= 10V
15V
GS
- - - -
60
40
T = 25ºC
J
20
0
0.8
-50
-25
0
25
50
75
100
125
150
175
40
80
120
160
200
240
280
320
ID - Amperes
TC - Degrees Centigrade
© 2006 IXYS CORPORATION All rights reserved
IXTA220N055T
IXTP220N055T
Fig. 8. Transconductance
Fig. 7. Input Admittance
180
160
140
120
100
80
270
240
210
180
150
120
90
T
J
= - 40ºC
25ºC
150ºC
60
T
J
= 150ºC
40
60
25ºC
-40ºC
20
30
0
0
0
30
60
90
120
150
180
210
240
270
160
10
3.5
0.4
0
4
4.5
5
5.5
6
6.5
1.3
40
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
300
270
240
210
180
150
120
90
10
9
8
7
6
5
4
3
2
1
0
V
= 27.5V
DS
I
I
= 25A
D
G
= 10mA
T
= 150ºC
J
T
= 25ºC
J
60
30
0
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
0
20
40
60
80
100
120
140
QG - NanoCoulombs
VSD - Volts
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
10,000
1,000
100
1.00
0.10
0.01
C
iss
C
oss
C
rss
f = 1 MHz
5
10
15
20
25
30
35
0.0001
0.001
0.01
0.1
1
VDS - Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA 220N055T
IXTP 220N055T
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
75
70
65
60
55
50
45
40
35
30
25
20
75
70
65
60
55
50
45
40
35
30
25
R
= 5
Ω
G
V
V
= 10V
= 30V
GS
DS
T = 25ºC
J
R
V
V
= 5
Ω
G
= 10V
= 30V
GS
DS
I
= 50A
D
I
= 25A
D
T = 125ºC
J
25
35
45
55
65
75
85
95
105 115 125
25
30
35
40
45
50
TJ - Degrees Centigrade
ID - Amperes
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
160
140
120
100
80
65
60
55
50
45
40
35
30
65
90
86
82
78
74
70
66
62
58
54
50
I
= 25A, 50A
D
t r
td(on)
- - - -
63
61
59
57
55
53
51
49
47
45
TJ = 125ºC, V = 10V
GS
V
= 30V
DS
I
= 50A, 25A
D
I
= 50A, 25A
D
60
t f
R
td(off)
- - - -
= 5 , V = 10V
Ω
GS
40
G
V
= 30V
DS
20
25
35
45 55
65
75
85
95 105 115 125
4
6
8
10
12
14
16
18
20
RG - Ohms
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Fig. 17. Resistive Turn-off
Switching Times vs. Gate Resistance
Switching Times vs. Drain Current
64
62
60
58
56
54
52
50
48
46
84
80
76
72
68
64
60
56
52
48
190
170
150
130
110
90
260
230
200
170
140
110
80
TJ = 125ºC
tf
td(off)
- - - -
T = 125ºC, VGS = 10V
J
V
DS = 30V
tf
R
td(off)
- - - -
= 5 , VGS = 10V
Ω
G
I
= 25A
D
VDS = 30V
I
= 50A
D
70
T = 25ºC
J
50
50
24
28
32
36
40
44
48
4
6
8
10
12
14
16
18
20
RG - Ohms
ID - Amperes
© 2006 IXYS CORPORATION All rights reserved
IXYS REF: T_220N055T (5V) 6-16-06.xls
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