IXTP220N075T [IXYS]
Power Field-Effect Transistor, 130A I(D), 100V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN;
| 型号： | IXTP220N075T |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, 130A I(D), 100V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总5页 (文件大小：175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
TrenchMVTM
Power MOSFET
IXTA220N075T
IXTP220N075T
VDSS = 75
ID25 = 220
RDS(on) ≤ 4.5 mΩ
V
A
N-ChannelEnhancementMode
AvalancheRated
Symbol
Test Conditions
Maximum Ratings
TO-263 (IXTA)
VDSS
VDGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
75
75
V
V
G
S
VGSM
Transient
± 20
V
(TAB)
ID25
ILRMS
IDM
TC = 25°C
220
75
600
A
A
A
Lead Current Limit, RMS
TO-220 (IXTP)
TC = 25°C, pulse width limited by TJM
IAR
EAS
TC = 25°C
TC = 25°C
25
1.0
A
J
dv/dt
PD
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
TJ ≤ 175°C, RG = 3.3 Ω
3
V/ns
G
(TAB)
D
S
TC = 25°C
480
W
G = Gate
S = Source
D = Drain
TAB = Collector
TJ
TJM
Tstg
-55 ... +175
175
-55 ... +175
°C
°C
°C
Features
°C ꢀUltra-low On Resistance
°C
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
300
260
ꢀUnclamped Inductive Switching (UIS)
rated
ꢀLow package inductance
- easy to drive and to protect
ꢀ175 °C Operating Temperature
Md
Mounting torque (TO-220)
1.13 / 10 Nm/lb.in.
Weight
TO-220
TO-263
3
2.5
g
g
Advantages
ꢀ
Easy to mount
ꢀ
Space savings
ꢀ
High power density
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
Applications
Automotive
- Motor Drives
- 42V Power Bus
ꢀ
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
VGS = ± 20 V, VDS = 0 V
75
V
V
2.0
4.0
- ABS Systems
± 200
nA
ꢀ
DC/DC Converters and Off-line UPS
IDSS
VDS = VDSS
VGS = 0 V
5
μA
μA
ꢀ
Primary Switch for 24V and 48V
TJ = 150°C
250
Systems
High Current Switching
ꢀ
RDS(on)
VGS = 10 V, ID = 25 A, Notes 1, 2
3.9
4.5 mΩ
Applications
DS99611 (11/06)
© 2006 IXYS CORPORATION All rights reserved
IXTA220N075T
IXTP220N075T
Symbol
Test Conditions
Characteristic Values
TO-263 (IXTA) Outline
(TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 10 V; ID = 60 A, Note 1
75
120
S
Ciss
Coss
Crss
7700
1100
230
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A
RG = 3.3 Ω (External)
29
65
55
47
ns
ns
ns
ns
Pins: 1 - Gate
2 - Drain
3 - Source 4, TAB - Drain
Qg(on)
Qgs
165
40
nC
nC
nC
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
Qgd
50
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
RthJC
RthCH
0.31°C/W
°C/W
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
TO-220
0.50
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100
.405
.320
BSC
Source-Drain Diode
L
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
Symbol
Test Conditions
Characteristic Values
L1
L2
L3
L4
TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
IS
VGS = 0 V
220
A
A
R
0.46
0.74
.018
.029
ISM
VSD
trr
Pulse width limited by TJM
IF = 25 A, VGS = 0 V, Note 1
600
1.0
TO-220 (IXTP) Outline
V
IF = 25 A, -di/dt = 100 A/μs
80
ns
VR = 40 V, VGS = 0 V
Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %;
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5 mm or less from the package body.
PRELIMINARYTECHNICALINFORMATION
Pins: 1 - Gate
2 - Drain
3 - Source 4, TAB - Drain
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
oneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728 B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478B2
7,005,734B2
7,063,975B2
7,071,537
IXTA220N075T
IXTP220N075T
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
220
200
180
160
140
120
100
80
300
270
240
210
180
150
120
90
V
= 10V
V
= 10V
GS
GS
8V
7V
8V
7V
6V
5V
6V
60
60
40
5V
1
30
20
0
0
0
0.5
1.5
2
2.5
3
3.5
4
4.5
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VDS - Volts
1
1.1
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 110A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 150ºC
220
200
180
160
140
120
100
80
2.4
2.2
2
V
= 10V
GS
V
= 10V
GS
8V
7V
1.8
1.6
1.4
1.2
1
I
= 220A
D
6V
5V
I
= 110A
D
60
40
0.8
0.6
20
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50
-25
0
25
50
75
100
125
150
175
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 110A Value
vs. Drain Current
Fig. 6. Drain Current vs. Case Temperature
140
120
100
80
2.6
2.4
2.2
2
External Lead Current Limit for TO-263 (7-Lead)
T = 175ºC
J
V
= 10V
GS
1.8
1.6
1.4
1.2
1
15V - - - - -
External Lead Current Limit for TO-3P, TO-220, & TO-263
60
40
20
T = 25ºC
J
0.8
0.6
0
0
30
60
90
120 150 180 210 240 270 300
ID - Amperes
-50
-25
0
25
50
75
100
125
150
175
TC - Degrees Centigrade
© 2006 IXYS CORPORATION All rights reserved
IXTA220N075T
IXTP220N075T
Fig. 8. Transconductance
Fig. 7. Input Admittance
220
200
180
160
140
120
100
80
180
160
140
120
100
80
T
J
= - 40ºC
25ºC
150ºC
60
T
J
= 150ºC
60
25ºC
- 40ºC
40
40
20
20
0
0
0
20
40
60
80 100 120 140 160 180 200 220
ID - Amperes
3
0.4
0
3.5
4
4.5
5
5.5
6
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
270
240
210
180
150
120
90
10
9
8
7
6
5
4
3
2
1
0
V
= 37.5V
DS
I
I
= 25A
D
G
= 10mA
T
= 150ºC
J
T
J
= 25ºC
60
30
0
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
0
20
40
60
80
100
120
140
160
180
QG - NanoCoulombs
VSD - Volts
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
10,000
1,000
100
1.00
C
iss
0.10
C
C
oss
rss
25
f = 1 MHz
5
0.01
0.0001
10
15
20
30
35
40
0.001
0.01
0.1
1
10
VDS - Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA220N075T
IXTP220N075T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
70
65
60
55
50
45
40
35
30
25
20
75
70
65
60
55
50
45
40
35
30
25
20
R
= 3.3
Ω
G
V
V
= 10V
GS
DS
T = 25ºC
J
= 37.5V
R
= 3.3
Ω
G
V
V
= 10V
GS
DS
= 37.5V
I
= 50A
D
T = 125ºC
J
I
= 25A
D
25
35
45
55
65
75
85
95
105 115 125
24 26 28 30 32 34 36 38 40 42 44 46 48 50
ID - Amperes
TJ - Degrees Centigrade
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
75
220
200
180
160
140
120
100
80
48.5
48.0
47.5
47.0
46.5
46.0
45.5
45.0
44.5
44.0
84
80
76
72
68
64
60
56
52
48
t r
TJ = 125ºC, VGS = 10V
DS = 37.5V
td(on)
- - - -
t f
R
td(off)
- - - -
70
65
60
55
50
45
40
35
30
25
= 3.3 , V = 10V
Ω
GS
G
V
V
= 37.5V
DS
I
= 25A
D
I
= 50A
D
ID = 25A
I
= 50A
D
60
40
20
2
4
6
8
10
12
14
16
18
20
25
35
45
55
65
75
85
95 105 115 125
RG - Ohms
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
49
95
90
85
80
75
70
65
60
55
50
45
210
190
170
150
130
110
90
340
310
280
250
220
190
160
130
100
70
tf
R
td(off)
- - - -
t f
td(off)
- - - -
= 3.3 , VGS = 10V
Ω
G
T = 125ºC, VGS = 10V
J
48
47
46
45
44
VDS = 37.5V
VDS = 37.5V
I
= 25A
D
TJ = 125ºC
I
= 50A
D
70
T = 25ºC
J
50
30
2
4
6
8
10
12
14
16
18
20
24 26 28 30 32 34 36 38 40 42 44 46 48 50
ID - Amperes
RG - Ohms
IXYS REF: T_220N075T (61) 11-20-06-B.xls
© 2006 IXYS CORPORATION All rights reserved
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