IXTP22N50PM [LITTELFUSE]
Power Field-Effect Transistor, 8A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN;
| 型号： | IXTP22N50PM |
| 厂家： | 
LITTELFUSE |
| 描述： | Power Field-Effect Transistor, 8A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总5页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
PolarHVTM Power
MOSFET
VDSS = 500V
ID25 = 8A
IXTP22N50PM
RDS(on) ≤ 270mΩ
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
OVERMOLDED
(IXTP...M) OUTLINE
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1 MΩ
500
500
V
V
VGSS
VGSM
Continuous
Transient
± 30
± 40
V
V
G
D
S
ID25
IDM
TC = 25°C
8
50
A
A
G = Gate
S = Source
D = Drain
TC = 25°C, Pulse Width Limited by TJM
IA
EAS
TC = 25°C
TC = 25°C
22
750
A
mJ
dv/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ =150°C
TC = 25°C
10
43
V/ns
W
Features
TJ
TJM
Tstg
- 55 ... +150
150
- 55 ... +150
°C
°C
°C
ꢀPlastic Overmolded Tab for Electrical
Isolation
ꢀInternational Standard Package
ꢀAvalanche Rated
TL
TSOLD
1.6 mm (0.062 in.) from Case for 10 s
Plastic Body for 10 s
300
260
°C
°C
ꢀFast Intrinsic Diode
ꢀLow Package Inductance
Md
Mounting Torque
1.13/10
2.5
Nm/lb.in.
g
Weight
Advantages
ꢀHigh Power Density
ꢀEasy to Mount
Symbol
Test Conditions
Characteristic Values
ꢀSpace Savings
(TJ = 25°C, Unless Otherwise Specified)
Min.
500
3.0
Typ.
Max.
BVDSS
VGS(th)
VGS = 0V, ID = 250μA
VDS = VGS, ID = 250μA
V
V
Applications
5.5
ꢀSwitched-Mode and Resonant-Mode
Power Supplies
IGSS
IDSS
VGS = ±30V, VDS = 0V
±100 nA
ꢀDC-DC Converters
VDS = VDSS, VGS= 0V
5 μA
50 μA
ꢀLaser Drivers
ꢀAC and DC Motor Drives
ꢀRobotics and Servo Controls
TJ = 125°C
RDS(on)
VGS = 10V, ID = 11A, Note 1
270 mΩ
© 2009 IXYS CORPORATION, All Rights Reserved
DS100150A(07/09)
IXTP22N50PM
Symbol
Test Conditions
Characteristic Values
ISOLATED TO-220 (IXTP...M)
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS= 20V, ID = 11A, Note 1
12
20
S
Ciss
Coss
Crss
2880
310
29
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
25
27
75
21
ns
ns
ns
ns
1
2
3
Resistive Switching Times
VGS = 10V, VDS = 0.5 VDSS, ID = 11A
ꢀ
RG = 10Ω (External)
Qg(on)
Qgs
50
16
18
nC
nC
nC
VGS= 10V, VDS = 0.5
ꢀ
VDSS, ID = 11A
Qgd
RthJC
2.90 °C/W
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
22
A
A
ISM
VSD
trr
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
88
1.5
V
IF = 22A, -di/dt = 100A/μs,
400
ns
VR = 100V, VGS = 0V
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2 %.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTP22N50PM
Fig. 2. Extended Output Characteristics
Fig. 1. Output Characteristics
@ 25ºC
@ 25ºC
55
50
45
40
35
30
25
20
15
10
5
22
20
18
16
14
12
10
8
VGS = 10V
8V
VGS = 10V
8V
7V
7V
6V
6V
6
4
5V
5V
2
0
0
0
1
2
3
4
5
6
7
0
5
10
15
20
25
30
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics
@ 125ºC
Fig. 4. RDS(on) Normalized to ID = 11A Value
vs. Junction Temperature
22
20
18
16
14
12
10
8
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
VGS = 10V
7V
VGS = 10V
6V
I D = 22A
I D = 11A
6
5V
4
2
0
0
2
4
6
8
10
12
14
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
VDS - Volts
Fig. 6. Maximum Drain Current vs.
Case Temperature
Fig. 5. RDS(on) Normalized to ID = 11A Value
vs. Drain Current
9
8
7
6
5
4
3
2
1
0
3.2
2.8
2.4
2.0
1.6
1.2
0.8
VGS = 10V
TJ = 125ºC
TJ = 25ºC
-50
-25
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
40
45
50
55
TC - Degrees Centigrade
ID - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_22N50P(63)7-22-09-B
IXTP22N50PM
Fig. 7. Input Admittance
Fig. 8. Transconductance
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
TJ = - 40ºC
25ºC
TJ = 125ºC
25ºC
- 40ºC
125ºC
0
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
1.2
40
0
4
8
12
16
20
24
28
32
36
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
80
70
60
50
40
30
20
10
0
VDS = 250V
I D = 11A
I G = 10mA
TJ = 125ºC
TJ = 25ºC
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
5
10
15
20
25
30
35
40
45
50
VSD - Volts
QG - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
10,000
1,000
100
100.00
10.00
1.00
= 1 MHz
f
RDS(on) Limit
25µs
100µs
C
iss
1ms
C
oss
rss
10ms
100ms
1s
0.10
DC
TJ = 150ºC
C = 25ºC
Single Pulse
T
C
10
0.01
0
5
10
15
20
25
30
35
1
10
100
1,000
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTP22N50PM
Fig. 13. Maximum Transient Thermal Impedance
10.00
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width - Seconds
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_22N50P(63)7-22-09-B
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