IXTP230N04T4 [IXYS]
Power Field-Effect Transistor;
| 型号： | IXTP230N04T4 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor |
| 文件： | 总6页 (文件大小：177K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
TrenchT4TM
Power MOSFET
VDSS = 40V
ID25 = 230A
RDS(on) 2.9m
IXTA230N04T4
IXTP230N04T4
N-Channel Enhancement Mode
Avalanche Rated
TO-263 AA (IXTA)
G
S
Symbol
VDSS
Test Conditions
Maximum Ratings
D (Tab)
TJ = 25C to 175C
40
40
V
V
VDGR
TJ = 25C to 175C, RGS = 1M
TO-220AB (IXTP)
VGSM
Transient
15
V
ID25
ILRMS
TC = 25C
Lead Current Limit, RMS
230
160
A
A
IDM
TC = 25C, Pulse Width Limited by TJM
700
A
G
D
D (Tab)
= Drain
S
IA
EAS
TC = 25C
TC = 25C
100
600
A
mJ
G = Gate
D
PD
TC = 25C
340
W
S = Source
Tab = Drain
TJ
TJM
Tstg
-55 ... +175
175
-55 ... +175
C
C
C
Features
International Standard Packages
175°C Operating Temperature
High Current Handling Capability
Avalanche Rated
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Md
Mounting Torque
(TO-220)
1.13 / 10
Nm/lb.in.
Weight
TO-263
TO-220
2.5
3.0
g
g
Low RDS(on)
Advantages
Easy to Mount
Space Savings
High Power Density
Symbol
Test Conditions
Characteristic Values
(TJ = 25C Unless Otherwise Specified)
Min. Typ.
40
2.0
Max.
Applications
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VGS = 15V, VDS = 0V
VDS = VDSS, VGS = 0V
V
V
4.0
• Synchronous Buck Converters
• High Current Switching Power
Supplies
200 nA
A
IDSS
5
• Battery Powered Electric Motors
TJ = 150C
VGS = 10V, ID = 0.5 • ID25, Notes 1,2
250 A
2.9 m
• Resonant-Mode Power Supplies
• Electronics Ballast Application
• Class D Audio Amplifiers
RDS(on)
DS100729(5/16)
© 2016 IXYS CORPORATION, All Rights Reserved
IXTA230N04T4
IXTP230N04T4
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
TO-263 (IXTA) Outline
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 60A, Note 1
Gate Input Resistance
100
170
1.2
S
RGi
Ciss
Coss
Crss
7400
1115
760
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
1. Gate
2. Drain
3. Source
4. Drain
Bottom
Side
td(on)
tr
td(off)
tf
40
143
85
ns
ns
ns
ns
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10 (External)
82
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
Qg(on)
Qgs
140
35
nC
nC
nC
A
b
b2
4.06
0.51
1.14
4.83
0.99
1.40
.160
.020
.045
.190
.039
.055
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
c
c2
0.40
1.14
0.74
1.40
.016
.045
.029
.055
Qgd
53
D
D1
8.64
8.00
9.65
8.89
.340
.280
.380
.320
RthJC
RthCS
0.44 C/W
C/W
TO-220
0.50
E
9.65
10.41
.380
.405
E1
e
L
L1
L2
L3
L4
6.22
2.54
14.61
2.29
1.02
1.27
0
8.13
BSC
15.88
2.79
1.40
1.78
0.13
.270
.100 BSC
.320
.575
.090
.040
.050
0
.625
.110
.055
.070
.005
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min. Typ.
Max.
230
920
1.4
TO-220 (IXTP) Outline
IS
VGS = 0V
A
A
V
ISM
VSD
Repetitive, Pulse width limited by TJM
IF = 100A, VGS = 0V, Note 1
trr
32
1.6
ns
A
IF = 115A, VGS = 0V
IRM
QRM
-di/dt = 100A/s
VR = 30V
25.6
nC
Notes: 1. Pulse test, t 300s, duty cycle, d 2%.
Pins:
1 - Gate
3 - Source
2 - Drain
2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm
or less from the package body.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
7,005,734 B2 7,157,338B2
7,063,975 B2
6,534,343
6,583,505
6,710,405 B2 6,759,692
6,710,463
6,771,478 B2 7,071,537
IXTA230N04T4
IXTP230N04T4
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
240
200
160
120
80
400
350
300
250
200
150
100
50
V
= 15V
10V
GS
V
= 10V
GS
9V
8V
9V
8V
7V
6V
7V
40
6V
0
0
0
1
2
3
4
5
6
7
8
9
10
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
VDS - Volts
VDS - Volts
Fig. 4. Normalized RDS(on) to ID = 115A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 150ºC
240
200
160
120
80
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 15V
GS
V
= 10V
GS
10V
9V
8V
I
D
= 230A
7V
I
D
= 115A
6V
5V
40
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
-25
0
25
50
75
100
125
150
175
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. Normalized RDS(on) to ID = 115A
vs. Drain Current
Fig. 6. Drain Current vs. Case Temperature
180
160
140
120
100
80
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 10V
15V
GS
T = 175ºC
J
External Lead Current Limit
60
T = 25ºC
J
40
20
0
-50
-25
0
25
50
75
100
125
150
175
0
50
100
150
200
250
300
350
ID - Amperes
TC - Degrees Centigrade
© 2016 IXYS CORPORATION, All Rights Reserved
IXTA230N04T4
IXTP230N04T4
Fig. 8. Transconductance
Fig. 7. Input Admittance
180
160
140
120
100
80
500
450
400
350
300
250
200
150
100
50
V
= 10V
V
= 10V
DS
T
J
= - 40ºC
DS
25ºC
150ºC
T
J
= 150ºC
25ºC
60
- 40ºC
40
20
0
0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
0
20
40
60
80
100
120
140
160
180
200
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
300
250
200
150
100
50
10
9
8
7
6
5
4
3
2
1
0
V
= 20V
DS
I
I
= 115A
= 10mA
D
G
T
J
= 150ºC
T
J
= 25ºC
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
0
20
40
60
80
100
120
140
QG - NanoCoulombs
VSD - Volts
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
1,000
100
10
10,000
1,000
100
R
Limit
DS(on)
C
iss
100µs
C
oss
External Lead
Current Limit
C
rss
T
= 175ºC
= 25ºC
C
J
T
= 1 MHz
f
1ms
Single Pulse
10ms
DC
1
1
10
100
0
5
10
15
20
25
30
35
40
VDS - Volts
VDS - Volts
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXTA230N04T4
IXTP230N04T4
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
200
180
160
140
120
100
200
180
160
140
120
100
R
= 10Ω , V = 10V
GS
R
= 10Ω , V = 10V
G
G
GS
V
= 20V
V
= 20V
DS
DS
I
I
= 230A
= 115A
D
D
T
J
= 25ºC
T
J
= 150ºC
25
50
75
100
125
150
110
130
150
170
190
210
230
TJ - Degrees Centigrade
ID - Amperes
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
1000
900
800
700
600
500
400
300
200
100
0
300
140
120
100
80
130
270
240
210
180
150
120
90
t r
td(on)
t f
td(off)
120
110
100
90
TJ = 150ºC, V = 10V
R = 10Ω, V = 10V
G GS
GS
V
= 20V
V
= 20V
DS
DS
I
= 115A
D
I
= 115A
D
60
I
= 230A
D
40
80
I
= 230A
D
60
20
70
30
0
60
0
25
50
75
100
125
150
10
20
30
40
50
60
70
80
TJ - Degrees Centigrade
RG - Ohms
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
110
105
100
95
140
130
120
110
100
90
600
500
400
300
200
100
0
650
550
450
350
250
150
50
t f
td(off)
t f
td(off)
R
G
= 10ꢀ, VGS = 10V
T = 150ºC, V = 10V
J GS
V
DS = 20V
V
= 20V
DS
T
J
= 150ºC
I = 230A
D
I
= 115A
D
90
85
80
80
T
J
= 25ºC
75
70
70
60
10
20
30
40
50
60
110
130
150
170
190
210
230
ID - Amperes
RG - Ohms
© 2016 IXYS CORPORATION, All Rights Reserved
IXTA230N04T4
IXTP230N04T4
Fig. 19. Maximum Transient Thermal Impedance
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_230N04T4 (T4-M04) 5-29-16
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