IXTP1N80 [IXYS]
High Voltage MOSFET; 高电压的MOSFET
| 型号： | IXTP1N80 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | High Voltage MOSFET |
| 文件： | 总2页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IXTA 1N80
IXTP 1N80
IXTY1N80
VDSS
ID25
RDS(on) = 11
= 800
= 750 mA
V
High Voltage MOSFET
N-ChannelEnhancementMode
AvalancheEnergyRated
Ω
Preliminary Data
Symbol
TestConditions
Maximum Ratings
TO-220AB(IXTP)
VDSS
VDGR
TJ = 25°C to 150°C
800
800
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ
AB)
VGS
Continuous
Transient
±20
±30
V
V
G
D
S
VGSM
ID25
IDM
TC = 25°C
750
3
mA
A
TO-263AA(IXTA)
TC = 25°C, pulse width limited by TJM
IAR
1.0
A
G
S
EAR
EAS
TC = 25°C
TC = 25°C
5
mJ
mJ
D (TAB)
100
TO-252 AA (IXTY)
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 47 Ω
,
3
V/ns
PD
TC = 25°C
40
W
G
S
TJ
-55 ... +150
150
°C
°C
°C
D (TAB)
TJM
Tstg
-55 ... +150
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Md
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-220
TO-252
TO-263
4
0.8
3
g
g
g
Features
!International standard packages
!High voltage, Low RDS (on) HDMOSTM
process
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
!Rugged polysilicon gate cell structure
!Fast switching times
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Applications
VDSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 25 µA
800
2.5
V
V
! Switch-mode and resonant-mode
power supplies
VGS(th)
4.5
! Flyback inverters
! DC choppers
! High frequency matching
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±100 nA
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
25 µA
500 µA
Advantages
RDS(on)
VGS = 10 V, ID = 500 mA
9.5
11
Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
! Space savings
! High power density
DS98822C(11/03)
© 2003 IXYS All rights reserved
IXTP 1N80 IXTA 1N80
IXTY 1N80
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-220 AD Dimensions
VDS = 20 V; ID = 500 mA, pulse test
0.7
0.8
S
Ciss
Coss
Crss
220
23
4
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
11
19
40
28
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 1A
RG = 47Ω, (External)
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
Bottom Side
QG(on)
QGS
8.5
2.5
4.5
nC
nC
nC
VGS = 10 V, VDS = 0.5 • VDSS, ID = 1A
QGD
RthJC
RthCK
3.1 K/W
K/W
(IXTP)
0.50
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
TestConditions
VGS = 0 V
IS
750 mA
ISM
VSD
Repetitive; pulse width limited by TJM
3
2
A
V
TO-263AAOutline
IF = IS, VGS = 0 V,
1.8
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = IS, -di/dt = 100 A/µs, VR = 100 V
710
ns
TO-252AAOutline
Dim. Millimeter
Inches
Max.
Min. Max. Min.
1. Gate
2. Drain
3. Source
4. Drain
A
A1
2.19 2.38 0.086 0.094
0.89 1.14 0.035 0.045
A2
b
0
0.13
0
0.005
BottomSide
0.64 0.89 0.025 0.035
Dim.
Millimeter
Inches
b1
b2
0.76 1.14 0.030 0.045
5.21 5.46 0.205 0.215
Min.
Max.
Min.
Max.
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
c
c1
0.46 0.58 0.018 0.023
0.46 0.58 0.018 0.023
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
D
D1
5.97 6.22 0.235 0.245
4.32 5.21 0.170 0.205
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
E
E1
6.35 6.73 0.250 0.265
4.32 5.21 0.170 0.205
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
e
e1
2.28 BSC
4.57 BSC
0.090BSC
0.180BSC
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100
.405
.320
BSC
H
L
9.40 10.42 0.370 0.410
0.51 1.02 0.020 0.040
L
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
L1
L2
L3
L4
L1
L2
L3
0.64 1.02 0.025 0.040
0.89 1.27 0.035 0.050
2.54 2.92 0.100 0.115
R
0.46
0.74
.018
.029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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