IXTP1R4N120P [IXYS]

Power Field-Effect Transistor, 1.4A I(D), 1200V, 13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN;


型号：	IXTP1R4N120P
厂家：	IXYS CORPORATION
描述：	Power Field-Effect Transistor, 1.4A I(D), 1200V, 13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 局域网开关脉冲晶体管
文件：	总5页 (文件大小：313K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Polar^TM

Power MOSFET

IXTY1R4N120PHV

IXTY1R4N120P

IXTA1R4N120P

IXTP1R4N120P

V_DSS= 1200V

I_D25= 1.4A

R_DS(on) 13

TO-252

(IXTY..HV)

N-Channel Enhancement Mode

Avalanche Rated

D (Tab)

TO-252

(IXTY)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25C to 150C

1200

D (Tab)

V_DGR

T_J= 25C to 150C, R_GS= 1M

TO-263

(IXTA)

V_GSS

V_GSM

Continuous

Transient

30

40

I_D25

I_DM

T_C= 25C

1.4

3.0

D (Tab)

T_C= 25C, Pulse Width Limited by T_JM

TO-220

(IXTP)

I_A

T_C= 25C

1.4

E_AS

150

dv/dt

P_D

I_S I_DM, V_DD V_DSS, T_J 150°C

T_C= 25C

V/ns

D (Tab)

T_J

-55 ... +150

150

C

T_JM

T_stg

G = Gate

= Drain

S = Source

Tab = Drain

-55 ... +150

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

Features



International Standard Packages

Low Q_G

Avalanche Rated

Low Package Inductance

Fast Intrinsic Rectifier

F_C

M_d

Mounting Force (TO-263)

Mounting Torque (TO-220)

10..65 / 2.2..14.6

1.13 / 10

N/lb

Nm/lb.in



Weight

TO-252 / HV

TO-263

TO-220

0.35

2.50

3.00

Advantages



High Power Density

Easy to Mount

Space Savings



Symbol

Test Conditions

Characteristic Values



(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 100μA

V_GS= 30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

1200

Applications

2.5

4.5



DC-DC Converters

Switch-Mode and Resonant-Mode



100 nA

A

Power Supplies

AC and DC Motor Drives



I_DSS





Discharge Circiuts in Lasers, Spark

Igniters, RF Generators

T_J= 125C

300 A





High Voltage Pulse Power

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1, 2

10.5

13.0 

Applications

DS99871D(8/17)

IXTY1R4N120PHV IXTA1R4N120P

IXTY1R4N120P

IXTP1R4N120P

Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max

g_fs

V_DS= 20V, I_D= 0.5 • I_D25, Note 1

V_GS= 0V, V_DS= 25V, f = 1MHz

0.8

1.3

C_iss

C_oss

C_rss

666

7.6

Q_g(on)

Q_gs

24.8

4.4

V_GS= 10V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_D25

Q_gd

12.8

t_d(on)

t_r

t_d(off)

t_f

Resistive Switching Times

_GS= 10V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_D25

R_G= 25 (External)

R_thJC

R_thCS

1.45 C/W

C/W

TO-220

0.50

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max

I_S

V_GS= 0V

1.4

I_SM

V_SD

t_rr

Repetitive, Pulse Width Limited by T_JM

I_F= I_S, V_GS= 0V, Note 1

4.2

1.5

I_F= 1.4A, -di/dt = 100A/μs, V_R= 100V

900

Notes: 1. Pulse test, t  300s, duty cycle, d  2%.

2. On through-hole packages, R_DS(on)Kelvin test contact

location must be 5mm or less from the package body.

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered

by one or more of the following U.S. patents: 4,860,072 5,017,508

4,881,106 5,034,796

4,835,592 4,931,844

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123B1

6,306,728B1

6,404,065B1

6,534,343

6,583,505

6,683,344

6,710,405B2 6,759,692

6,710,463

6,727,585

7,005,734B2 7,157,338B2

7,063,975B2

6,771,478B2 7,071,537

IXTY1R4N120PHV IXTA1R4N120P

IXTY1R4N120P IXTP1R4N120P

Fig. 2. Output Characteristics @ T_J= 125^oC

Fig. 1. Output Characteristics @ T_J= 25^oC

2.2

1.4

= 10V

1.2

1.0

0.8

0.6

0.4

0.2

0.0

1.8

1.6

1.4

1.2

0.8

0.6

0.4

0.2

150

V_DS- Volts

Fig. 4. R_DS(on)Normalized to I_D= 0.7A Value vs.

Drain Current

Fig. 3. R_DS(on)Normalized to I_D= 0.7A Value vs.

Junction Temperature

3.2

2.8

2.4

2.0

1.6

1.2

0.8

0.4

2.6

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

= 10V

= 125^oC

= 10V

= 1.4A

= 0.7A

= 25^oC

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

2.2

-50

-25

100

125

I_D- Amperes

T_J- Degrees Centigrade

Fig. 6. Normalized Breakdown & Threshold Voltages

vs. Junction Temperature

Fig. 5. Maximum Drain Current vs. Case Temperature

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

1.2

1.1

1.0

0.9

0.8

0.7

DSS

GS(th)

100

-60

-40

-20

120

140

160

-50

-25

100

125

T_J- Degrees Centigrade

T_C- Degrees Centigrade

IXTY1R4N120PHV IXTA1R4N120P

IXTY1R4N120P IXTP1R4N120P

Fig. 8. Transconductance

Fig. 7. Input Admittance

2.0

1.5

1.0

0.5

0.0

2.8

2.4

2.0

1.6

1.2

0.8

0.4

0.0

= - 40^oC

25^oC

125^oC

= 125^oC

25^oC

- 40^oC

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

0.9

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

V_GS- Volts

I_D- Amperes

Fig. 9. Forward Voltage Drop of Intrinsic Diode

Fig. 10. Gate Charge

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

= 600V

= 0.7A

= 10mA

= 125^oC

= 25^oC

0.4

0.45

0.5

0.55

0.6

0.65

0.7

0.75

0.8

0.85

Q_G- NanoCoulombs

V_SD- Volts

Fig. 12. Maximum Transient Thermal Impedance

Fig. 11. Capacitance

10,000

1,000

100

= 1 MHz

iss

oss

0.1

rss

0.01

0.00001

0.0001

0.001

0.01

0.1

V_DS- Volts

Pulse Width - Seconds

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTY1R4N120PHV IXTA1R4N120P

IXTY1R4N120P

IXTP1R4N120P

TO-252 AA Outline

TO-263 Outline

TO-220 Outline

1 - Gate

2,4 - Drain

3 - Source

0.43 [11.0]

0

5.55MIN

OPTIONAL

EJECTOR

0.34 [8.7]

0.66 [16.6]

6.50MIN

1 - Gate

2,4 - Drain

3 - Source

0.20 [5.0]

0.12 [3.0]

0.06 [1.6]

6.40

2.28

3X b

3X b2

0.10 [2.5]

2.85MIN

1.25MIN

BOTTOM

VIEW

1 - Gate

2,4 - Drain

3 - Source

LAND PATTERN RECOMMENDATION

TO-252HV Outline

1 - Gate

2 - Source

3 - Drain

IXYS REF: T_3N60P(2J) 6-20-17-A

IXTP1R4N120P [IXYS]

相关型号：

IXTP1R6N100D2

IXTP1R6N50D2

IXTP1R6N50P

IXTP200N055T2

IXTP20N65X

IXTP220N04T2

IXTP220N055T

IXTP220N075T

IXTP22N15MA

IXTP22N15MB

IXTP22N20MA

IXTP22N20MB