IXFR40N90P [IXYS]
Polar Power MOSFET HiPerFET; Polar功率MOSFET HiperFET
| 型号： | IXFR40N90P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Polar Power MOSFET HiPerFET |
| 文件： | 总4页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
PolarTM Power MOSFET
VDSS = 900V
ID25 = 21A
RDS(on) ≤ 230mΩ
≤ 300ns
IXFR40N90P
HiPerFETTM
N-Channel Enhancement Mode
Avalanche Rated
trr
Fast Intrinsic Diode
Symbol
VDSS
Test Conditions
Maximum Ratings
ISOPLUS247
E153432
TJ = 25°C to 150°C
900
900
V
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
VGSS
VGSM
Continuous
Transient
± 30
± 40
V
V
ID25
IDM
TC = 25°C
21
80
A
A
Isolated Tab
TC = 25°C, pulse width limited by TJM
IA
EAS
TC = 25°C
TC = 25°C
20
1.5
A
J
G = Gate
D
= Drain
S = Source
dV/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
15
V/ns
W
300
TJ
-55 ... +150
150
°C
°C
°C
Fearures
TJM
Tstg
z Silicon chip on Direct-Copper Bond
(DCB) substrate
-55 ... +150
z Isolated mounting surface
z 2500V electrical isolation
z Fast intrinsic diode
TL
Maximum lead temperature for soldering
Plastic body for 10s
300
260
°C
°C
V~
TSOLD
VISOL
FC
z Avalanche rated
z Low package inductance
50/60 Hz, RMS, 1 minute
Mounting force
2500
20..120/4.5..27
5
N/lb.
Advantages
Weight
g
z Low gate drive requirement
z High power density
Applications:
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ. Max.
z Switched-mode and resonant-mode
power supplies
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 3mA
VDS = VGS, ID = 1mA
VGS = ± 30V, VDS = 0V
900
3.5
V
V
z DC-DC Converters
6.5
z Laser Drivers
z AC and DC motor drives
z Robotics and servo controls
± 100 nA
IDSS
VDS = VDSS
VGS = 0V
50 μA
3.5 mA
TJ = 125°C
RDS(on)
VGS = 10V, ID = 20A, Note 1
230 mΩ
DS100063(10/08)
© 2008 IXYS CORPORATION, All rights reserved
IXFR40N90P
Symbol
Test Conditions
Characteristic Values
ISOPLUS247 (IXFR) Outline
(TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 20A, Note 1
Gate input resistance
18
30
S
RGi
1.5
Ω
Ciss
Coss
Crss
14
896
58
nF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
53
50
77
46
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 20A
RG = 1Ω (External)
Qg(on)
Qgs
230
70
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 20A
Qgd
100
RthJC
RthCS
0.42 °C/W
°C/W
0.15
Source-Drain Diode
Characteristic Values
TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
IS
VGS = 0V
40
A
A
V
ISM
VSD
Repetitive, pulse width limited by TJM
IF = IS, VGS = 0V, Note 1
160
1.5
trr
300 ns
IF = 20A, -di/dt = 100A/μs
QRM
IRM
1.7
μC
VR = 100V, VGS = 0V
14.0
A
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXFR40N90P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
40
35
30
25
20
15
10
5
90
80
70
60
50
40
30
20
10
0
VGS = 10V
9V
VGS = 10V
9V
8V
8V
7V
6V
7V
6V
0
0
0
0
1
2
3
4
5
6
7
8
9
0
5
10
15
20
25
30
150
150
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 20A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
40
35
30
25
20
15
10
5
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VGS = 10V
8V
VGS = 10V
I D = 40A
I D = 20A
7V
6V
0
2
4
6
8
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 20A Value
vs. Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
22
20
18
16
14
12
10
8
VGS = 10V
TJ = 125ºC
6
TJ = 25ºC
4
2
0
10
20
30
40
50
60
70
80
90
-50
-25
0
25
50
75
100
125
ID - Amperes
TC - Degrees Centigrade
© 2008 IXYS CORPORATION, All rights reserved
IXFR40N90P
Fig. 7. Input Admittance
Fig. 8. Transconductance
55
50
45
40
35
30
25
20
15
10
5
55
50
45
40
35
30
25
20
15
10
5
TJ = - 40ºC
25ºC
TJ = 125ºC
25ºC
- 40ºC
125ºC
0
0
0
5
10
15
20
25
30
35
40
45
50
55
350
10
4.5
0.3
0
5.0
5.5
6.0
6.5
7.0
7.5
8.0
1.1
35
8.5
1.2
40
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
16
14
12
10
8
120
100
80
60
40
20
0
VDS = 450V
D = 20A
I G = 10mA
I
6
TJ = 125ºC
4
TJ = 25ºC
2
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
50
100
150
200
250
300
VSD - Volts
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
100,000
10,000
1,000
100
1.00
0.10
0.01
= 1 MHz
f
C
iss
C
oss
C
rss
10
5
10
15
20
25
30
0.001
0.01
0.1
1
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
Pulse Width - Seconds
IXYS REF: F_40N90P(96)10-23-08
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