IXFR48N50Q [IXYS]
HiPerFET Power MOSFETs ISOPLUS247 Q-Class; HiPerFET功率MOSFET ISOPLUS247 Q系列
| 型号： | IXFR48N50Q |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFET Power MOSFETs ISOPLUS247 Q-Class |
| 文件： | 总2页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFETTM
VDSS ID25
RDS(on)
Power MOSFETs
IXFR 44N50Q 500 V 34 A 120 mΩ
IXFR 48N50Q 500 V 40 A 110 mΩ
ISOPLUS247TM, Q-Class
t ≤ 250 ns
(Electrically Isolated Backside)
rr
N-ChannelEnhancementMode
Avalanche Rated, Low Qg, High dv/dt
ISOPLUS247TM
Symbol
TestConditions
Maximum Ratings
E153432
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
500
500
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
Isolated backside*
ID25
IDM
IAR
TC = 25°C
44N50Q34
48N50Q40
44N50Q176
48N50Q192
44N50Q44
48N50Q48
A
A
A
A
A
TC = 25°C, Note 1
TC = 25°C
G = Gate
S = Source
D = Drain
A
EAR
EAS
TC = 25°C
TC = 25°C
60
2.5
mJ
J
* Patent pending
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
Features
l Silicon chip on Direct-Copper-Bond
substrate
PD
TC = 25°C
310
W
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l Low drain to tab capacitance(<30pF)
l IXYS advanced low Qg process
l Rugged polysilicon gate cell structure
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
TL
1.6 mm (0.063 in.) from case for 10 s
300
2500
5
°C
V~
g
l Rated for Unclamped Inductive Load
VISOL
Weight
50/60 Hz, RMS
t = 1 min
Switching (UIS)
l Fast intrinsic diode
Applications
l
DC-DC converters
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
l
Battery chargers
l
Switched-mode and resonant-mode
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250µA
VDS = VGS, ID = 4mA
VGS = ±20 V, VDS = 0
500
2.0
V
4.0 V
power supplies
l
DC choppers
l AC motor control
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
100 µA
2 mA
Advantages
l
Easy assembly
TJ = 125°C
l
Space savings
RDS(on)
VGS = 10 V, ID = IT
Notes 2, 3
44N50Q
48N50Q
120 mΩ
110 mΩ
l
High power density
© 2002 IXYS All rights reserved
98702B (6/02)
IXFR 44N50Q
IXFR 48N50Q
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
ISOPLUS247OUTLINE
VDS = 10 V; ID = IT
Notes 2, 3
30
45
S
Ciss
Coss
Crss
6400
930
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
220
td(on)
tr
td(off)
tf
33
22
75
10
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
RG = 1 Ω (External), Notes 2, 3
Qg(on)
Qgs
190
40
nC
nC
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
Notes 2, 3
Qgd
86
nC
0.40 K/W
K/W
Dim.
Millimeter
Inches
Min.
Max. Min. Max.
RthJC
RthCK
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
0.15
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
e
L
L1
5.45 BSC
19.81 20.32
3.81
.215 BSC
.780 .800
.150 .170
Symbol
TestConditions
4.32
IS
VGS = 0 V
48
192
1.5
A
A
V
Q
R
5.59
4.32
6.20
4.83
.220 .244
.170 .190
ISM
VSD
Repetitive; Note 1
IF = IT, VGS = 0 V, Notes 2, 3
trr
250 ns
QRM
IRM
1.4
10
µC
IF = 25A,-di/dt = 100 A/µs, VR = 100 V
A
Note: 1. Pulse width limited by TJM
2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
3. IXFR44N50Q: IT = 22 A
IXFR48N50Q: IT = 24 A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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