IXFR44N80P [IXYS]
PolarHV HiPerFET Power MOSFET; PolarHV HiPerFET功率MOSFET
| 型号： | IXFR44N80P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | PolarHV HiPerFET Power MOSFET |
| 文件： | 总4页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarHVTM HiPerFET
Power MOSFET
IXFR 44N80P
VDSS = 800
ID25 = 25
RDS(on) ≤ 190 mΩ
trr ≤ 250 ns
V
A
Electrically Isolated Tab
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings
ISOPLUS247 (IXFR)
E153432
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
800
800
V
V
VGS
VGSM
Continuous
Transient
± 30
± 40
V
V
ID25
IDM
TC = 25°C
TC = 25°C, pulse width limited by TJM
25
100
A
A
Isolated Tab
IAR
EAR
EAS
TC = 25°C
TC = 25°C
TC = 25°C
25
80
3.4
A
mJ
J
G = Gate
S = Source
D = Drain
Features
dv/dt
PD
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 10 Ω
,
10
V/ns
z Silicon chip on Direct-Copper-Bond
substrate
TC = 25°C
300
W
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
z Low drain to tab capacitance(<30pF)
z Low RDS (on) HDMOSTM process
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
300
260
°C
°C
z Rugged polysilicon gate cell structure
z Unclamped Inductive Switching (UIS)
rated
VISOL
FC
50/60 Hz, RMS, 1 minute
Mounting force
2500
V~
z Fast intrinsic Rectifier
20..120 /4.5..25
N/lb
Applications
Weight
5
g
z
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
z
Symbol
Test Conditions
Characteristic Values
z
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
power supplies
DC choppers
z AC motor control
z
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 800 μA
VDS = VGS, ID = 8 mA
VGS = ± 30 V, VDS = 0 V
800
V
V
3.0
5.0
Advantages
± ±200
50
nA
z
Easy assembly
Space savings
High power density
z
IDSS
VDS = VDSS
VGS = 0 V
μA
z
TJ = 125°C
1.5 mA
RDS(on)
VGS = 10 V, ID = IT, Note 1
200 mΩ
DS99504E(06/06)
© 2006 IXYS All rights reserved
IXFR 44N80P
Symbol
gfs
Test Conditions
Characteristic Values
ISOPLUS247 (IXFR) Outline
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
VDS= 20 V; ID = IT, Note 1
27
43
S
Ciss
Coss
Crss
12
910
30
nF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
28
22
75
27
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 44 A
RG = 1 Ω (External)
Qg(on)
Qgs
200
67
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = IT
Qgd
65
RthJC
RthCS
0.42 °C/W
°C/W
0.15
Source-Drain Diode
Characteristic Values
TJ = 25°C unless otherwise specified)
Symbol
IS
Test Conditions
Min. Typ.
Max.
VGS = 0 V
44
A
A
V
ISM
Repetitive
100
1.5
VSD
IF = IS, VGS = 0 V, Note 1
trr
IF = 22 A, -di/dt = 100 A/μs
250 ns
QRM
IRM
VR = 100 V, VGS = 0 V
0.8
8.0
μC
A
Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ±≤ 2 %;
2. Test current IT = 22 A.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405B2 6,759,692
6,710,463 6,771,478 B2
7,005,734 B2
IXFR 44N80P
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
@ 25 C
@ 25 C
°
°
45
40
35
30
25
20
15
10
5
100
90
80
70
60
50
40
30
20
10
0
V
= 10V
7V
V
= 10V
7V
GS
GS
6V
6V
5V
5V
0
0
3
6
9
12 15 18 21 24 27 30
0
0
0
1
2
3
4
5
6
7
8
VD S - Volts
VD S - Volts
Fig. 3. Output Characteristics
Fig. 4. RDS(on Norm alized to ID = 22A
)
@ 125 C
°
Value vs. Junction Tem perature
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
45
40
35
30
25
20
15
10
5
V
= 10V
7V
GS
V
= 10V
GS
6V
I
= 44A
D
I
= 22A
D
5V
0
-50
-25
0
25
50
75
100 125 150
2
4
6
8
10
12
14
16
VD S - Volts
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case
Tem perature
Fig. 5. RDS(on) Norm alized to ID = 22A
Value vs. Drain Current
28
24
20
16
12
8
2.4
2.2
2
V
= 10V
GS
T
J
= 125 C
°
1.8
1.6
1.4
1.2
1
T = 25 C
J
°
4
0
0.8
-50
-25
0
25
50
75
100
125
150
10 20 30 40 50 60 70 80 90 100
TC - Degrees Centigrade
I D - Amperes
© 2006 IXYS All rights reserved
IXFR 44N80P
Fig. 8. Transconductance
Fig. 7. Input Admittance
70
60
50
40
30
20
10
0
90
80
70
60
50
40
30
20
10
0
T = - 40 C
°
25 C
J
°
125 C
°
T = 125 C
°
J
25 C
°
- 40 C
°
0
10
20
30
40
50
60
70
80
3.5
4
4.5
5
5.5
6
6.5
VG S - Volts
I D - Amperes
Fig. 9. Source Current vs.
Source-To-Drain Voltage
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
140
120
100
80
V
= 400V
DS
I
I
= 22A
D
G
= 10mA
60
40
T = 125 C
°
J
20
T = 25 C
°
J
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2 1.3
0
25
50
75
100 125 150 175 200
VS D - Volts
Q G - NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Maximum Transient Thermal
Resistance
100000
10000
1000
100
1.00
0.10
0.01
f = 1MHz
C
C
iss
oss
C
rss
10
0
5
10
15
20
25
30
35
40
0.001
0.01
0.1
1
10
VDS - Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions
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